Abstract: A reflective photomask blank has: a substrate 10; a reflective multilayer film 20 that is formed on one main surface of the substrate 10 and reflects the exposure light; a protective film 50 formed in contact with the reflective multilayer film 20; and an absorbing film 70 that is formed on the protective film 50 and absorbs the exposure light. The protective film 50 is formed using a film containing ruthenium (Ru). The absorbing film 70 is formed using a single-layer film containing tantalum (Ta) and nitrogen (N), and has a content of nitrogen of 30 atom % or more and less than 60 atom %. Contrast between light reflected from a surface of the protective film 50 and light reflected on a surface of the absorbing film 70 with respect to light having a wavelength of 193 nm to 248 nm is 20% or more.

Abstract: A reflective photomask blank has a substrate 10; and a multilayer reflective film 50. The multilayer reflective film 50 has a periodic stacked structure in which a low refractive index layer 30 containing ruthenium (Ru), a high refractive index layer 20 containing silicon (Si), and a diffusion prevention layer 40. The diffusion prevention layer 40 is formed in contact with the low refractive index layer 30 on both or one of a side of the low refractive index layer 30 close to the substrate 10 and a side of the low refractive index layer 30 away from the substrate 10. The diffusion prevention layer 40 is one or more sublayers selected from a layer containing a silicon nitride (SiN), a layer containing silicon carbide (Sic), a layer containing molybdenum (Mo), a layer containing a molybdenum nitride (MoN), and a layer containing molybdenum carbide (MoC).

Abstract: With respect to a reflective mask blank for a reflective mask used in EUV lithography using EUV light, the reflective mask blank including a substrate, a multilayer reflection film having a periodically laminated structure in which low-refractive index layers composed of a material containing molybdenum and high-refractive index layers are alternately laminated, a protection film, and an absorber film is provided. The low-refractive index layer consists of one or more of first low-refractive index sublayers, and one or more of second low-refractive index sublayers that have a different composition from a composition of the first low-refractive index sublayer.

Abstract: As a reflective mask blank that includes a protection film containing ruthenium (Ru), a reflective mask blank in which the protection film is hard to be damaged and can be suppressed decrease of the thickness is provided by a reflective mask blank including a substrate, a multilayer reflection film, a protection film, an absorption film, and an etching prevention film that contains niobium (Nb) and is free of ruthenium (Ru) between the protection film and the absorption film.

Abstract: A fine and preferable pattern of an absorption film can be formed from the absorption film that can be patterned by dry etching using a gas containing oxygen (O) by a reflective mask blank including a substrate, a multilayer reflection film that is formed on one main surface of the substrate, and reflects exposure light, an absorption film that is formed on the multilayer reflection film, and absorbs the exposure light, and an etching mask film containing niobium (Nb) on the absorption film.

Abstract: In a reflective mask blank including a substrate, a multilayer reflection film, a protection film, an absorber film and a hard mask film, the protection film is composed of a material containing ruthenium (Ru), the absorber film consists of a first layer and a second layer, or a first layer, a second layer and a third layer, the first layer has a composition containing tantalum (Ta) and being free of nitrogen (N), the second layer has a composition containing tantalum (Ta) and nitrogen (N), the third layer has a composition containing tantalum (Ta), nitrogen (N) and oxygen (O), and the hard mask film is composed of a material containing chromium (Cr).

Abstract: A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as the exposure light, including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film that is formed on the multilayer reflection film and absorbs the exposure light, the absorber film being a single layer consisting of a first layer, or a plurality of layers consisting of, from the substrate side, a first layer and a second layer, the first layer being composed of tantalum and nitrogen and containing 55 to 70 at % of tantalum and 30 to 45 at % of nitrogen, the second layer being composed of tantalum and nitrogen, and oxygen of not more than 40 at %.

Abstract: A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.

Abstract: A reflective mask blank comprising a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects exposure light, and a protection film that is formed on the multilayer reflection film, comprises ruthenium (Ru) and niobium (Nb), and includes a portion having a low ruthenium (Ru) content in the thickness direction compared with both ruthenium (Ru) contents at the side close to the multilayer reflection film and at the side remotest from the multilayer reflection film.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion and a protection layer containing Ru and including a lower layer composed of Ru, and an upper layer composed of a material containing Ru and at least one selected from the group consisting of metals other than Ru, and metalloids.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.

Abstract: A reflective mask blank including a substrate, a multilayer reflection film consisting of at least two first layers and at least two second layers that are laminated alternatively and having different optical properties each other, and an absorber film are manufactured by a sputtering method. Each layer is formed by two stages consisting of a first stage applied from when the forming of each layer is started and until a prescribed thickness is formed, and a second stage applied from when the prescribed thickness is formed and until the forming of each layer is completed, and a sputtering pressure of the first stage is set to higher than both a sputtering pressure at which the forming of the layer formed just before is completed, and a sputtering pressure of the second stage.

Abstract: A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.

Abstract: With respect to a reflective mask blank for a reflective mask used in EUV lithography using EUV light, the reflective mask blank including a substrate, a multilayer reflection film having a periodically laminated structure in which low-refractive index layers composed of a material containing molybdenum and high-refractive index layers are alternately laminated, a protection film, and an absorber film is provided. The low-refractive index layer consists of one or more of first low-refractive index sublayers, and one or more of second low-refractive index sublayers that have a different composition from a composition of the first low-refractive index sublayer.

Abstract: A reflective mask blank including a substrate, and a multilayer reflection film for EUV light reflection, a protection film, and an absorber film for EUV light absorption formed on one main surface of the substrate in this order from the substrate side, and a conductive film formed on another main surface of the substrate, a coordinate reference mark is formed on the other main surface side.

Abstract: A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion and a protection layer containing Ru and including a lower layer composed of Ru, and an upper layer composed of a material containing Ru and at least one selected from the group consisting of metals other than Ru, and metalloids.

Abstract: A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.

Abstract: A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.