Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion and a protection layer containing Ru and including a lower layer composed of Ru, and an upper layer composed of a material containing Ru and at least one selected from the group consisting of metals other than Ru, and metalloids.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.

Abstract: A reflective mask blank including a substrate, a multilayer reflection film consisting of at least two first layers and at least two second layers that are laminated alternatively and having different optical properties each other, and an absorber film are manufactured by a sputtering method. Each layer is formed by two stages consisting of a first stage applied from when the forming of each layer is started and until a prescribed thickness is formed, and a second stage applied from when the prescribed thickness is formed and until the forming of each layer is completed, and a sputtering pressure of the first stage is set to higher than both a sputtering pressure at which the forming of the layer formed just before is completed, and a sputtering pressure of the second stage.

Abstract: A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.

Abstract: With respect to a reflective mask blank for a reflective mask used in EUV lithography using EUV light, the reflective mask blank including a substrate, a multilayer reflection film having a periodically laminated structure in which low-refractive index layers composed of a material containing molybdenum and high-refractive index layers are alternately laminated, a protection film, and an absorber film is provided. The low-refractive index layer consists of one or more of first low-refractive index sublayers, and one or more of second low-refractive index sublayers that have a different composition from a composition of the first low-refractive index sublayer.

Abstract: A reflective mask blank including a substrate, and a multilayer reflection film for EUV light reflection, a protection film, and an absorber film for EUV light absorption formed on one main surface of the substrate in this order from the substrate side, and a conductive film formed on another main surface of the substrate, a coordinate reference mark is formed on the other main surface side.

Abstract: A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion and a protection layer containing Ru and including a lower layer composed of Ru, and an upper layer composed of a material containing Ru and at least one selected from the group consisting of metals other than Ru, and metalloids.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.

Abstract: A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.

Abstract: A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.

Abstract: A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as the exposure light, including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film that is formed on the multilayer reflection film and absorbs the exposure light, the absorber film being a single layer consisting of a first layer, or a plurality of layers consisting of, from the substrate side, a first layer and a second layer, the first layer being composed of tantalum and nitrogen and containing 55 to 70 at % of tantalum and 30 to 45 at % of nitrogen, the second layer being composed of tantalum and nitrogen, and oxygen of not more than 40 at %.

Abstract: Provided is a photomask blank including, on a substrate, a processing film and a film made of a material containing chromium which is formed to be in contact with the processing film and has a three-layer structure of first, second and third layers, each of which contains chromium, oxygen, and nitrogen, wherein the first layer has a chromium content of 40 atomic % or less, an oxygen content of 50 atomic % or more, a nitrogen content of 10 atomic % or less, and a thickness of 20 nm or more, the second layer has a chromium content of 50 atomic % or more, an oxygen content of 20 atomic % or less, and a nitrogen content of 30 atomic % or more, and the third layer has a chromium content of 40 atomic % or less, an oxygen content of 50 atomic % or more, and a nitrogen content of 10 atomic % or less.

Abstract: A photomask blank for a material of a photomask used in pattern transfer by exposure light having a wavelength of up to 250 nm, including a transparent substrate, a chromium-containing film directly formed on the substrate or formed with an optical film intervened between the transparent substrate and the chromium-containing film. The chromium-containing film includes a region (A) composed of a chromium compound containing chromium, oxygen and carbon, wherein each of contents of the elements contained in the chromium compound is continuously varied in the thickness direction of the region (A), and toward the substrate, the content of chromium increases, and the content of carbon decreases.

Abstract: A reflective mask blank including a substrate, a multilayer reflection film consisting of at least two first layers and at least two second layers that are laminated alternatively and having different optical properties each other, and an absorber film are manufactured by a sputtering method. Each layer is formed by two stages consisting of a first stage applied from when the forming of each layer is started and until a prescribed thickness is formed, and a second stage applied from when the prescribed thickness is formed and until the forming of each layer is completed, and a sputtering pressure of the first stage is set to higher than both a sputtering pressure at which the forming of the layer formed just before is completed, and a sputtering pressure of the second stage.

Abstract: A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is provided. The halftone phase shift film includes at least one layer composed of a silicon base material having a transition metal content ?3 at %, a Si+N+O content ?90 at %, a Si content of 30-70 at %, a N+O content of 30-60 at %, and an O content ?30 at %, and having a sheet resistance ?1013/?/?. The halftone phase shift film undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and has chemical resistance and improved processability.

Abstract: A reflective mask blank including a substrate, and a multilayer reflection film for EUV light reflection, a protection film, and an absorber film for EUV light absorption formed on one main surface of the substrate in this order from the substrate side, and a conductive film formed on another main surface of the substrate, a coordinate reference mark is formed on the other main surface side.

Abstract: During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.

Abstract: A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties.

Abstract: A photomask blank comprising a transparent substrate and a Cr-containing film is provided. The Cr-containing film includes a layer which is composed of a C-containing Cr compound and further contains O or O and N. The layer has a C/Cr atomic ratio of at least 0.3 and a N/Cr atomic ratio of up to 0.1, and has a Cr content of up to 50 at % and a C/O atomic ratio of at least 0.8, or a Cr content of up to 60 at % and a C/O atomic ratio of at least 1. The photomask blank is processed into a photomask by dry etching the Cr-containing film.