Patents by Inventor Yukio KANEDA

Yukio KANEDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11910624
    Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: February 20, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Shintarou Hirata, Hideaki Togashi, Yukio Kaneda
  • Publication number: 20240023352
    Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.
    Type: Application
    Filed: August 23, 2023
    Publication date: January 18, 2024
    Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yosuke SAITO, Masashi BANDO, Yukio KANEDA, Yoshiyuki HIRANO, Toshiki MORIWAKI
  • Publication number: 20230422534
    Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
    Type: Application
    Filed: September 8, 2023
    Publication date: December 28, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yukio KANEDA, Fumihiko KOGA
  • Patent number: 11825666
    Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: November 21, 2023
    Assignees: Sony Corporation, Sony Semiconductor Solutions Corporation
    Inventors: Yosuke Saito, Masashi Bando, Yukio Kaneda, Yoshiyuki Hirano, Toshiki Moriwaki
  • Patent number: 11793009
    Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
    Type: Grant
    Filed: November 3, 2022
    Date of Patent: October 17, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yukio Kaneda, Fumihiko Koga
  • Publication number: 20230329016
    Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.
    Type: Application
    Filed: June 13, 2023
    Publication date: October 12, 2023
    Inventors: YUKIO KANEDA, RYOJI ARAI, TOSHIKI MORIWAKI
  • Patent number: 11711931
    Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: July 25, 2023
    Assignee: SONY GROUP CORPORATION
    Inventors: Yukio Kaneda, Ryoji Arai, Toshiki Moriwaki
  • Publication number: 20230119970
    Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.
    Type: Application
    Filed: December 15, 2022
    Publication date: April 20, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Shintarou HIRATA, Hideaki TOGASHI, Yukio KANEDA
  • Publication number: 20230068319
    Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
    Type: Application
    Filed: November 3, 2022
    Publication date: March 2, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yukio KANEDA, Fumihiko KOGA
  • Patent number: 11563058
    Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: January 24, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yukio Kaneda, Fumihiko Koga
  • Patent number: 11552268
    Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: January 10, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Shintarou Hirata, Hideaki Togashi, Yukio Kaneda
  • Patent number: 11532672
    Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: December 20, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yukio Kaneda, Fumihiko Koga
  • Publication number: 20220392931
    Abstract: A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit.
    Type: Application
    Filed: November 2, 2020
    Publication date: December 8, 2022
    Inventors: YUKIO KANEDA, HIDEAKI TOGASHI, FUMIHIKO KOGA, MASAHIRO JOEI, KENICHI MURATA, SHINTAROU HIRATA, NOBUHIRO KAWAI
  • Publication number: 20220336521
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Application
    Filed: April 29, 2022
    Publication date: October 20, 2022
    Applicant: SONY GROUP CORPORATION
    Inventors: Hideaki TOGASHI, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shintarou HIRATA, Taiichiro WATANABE, Yoshihiro ANDO, Toyotaka KATAOKA, Satoshi KEINO, Yukio KANEDA
  • Patent number: 11348965
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: May 31, 2022
    Assignee: SONY CORPORATION
    Inventors: Hideaki Togashi, Fumihiko Koga, Tetsuji Yamaguchi, Shintarou Hirata, Taiichiro Watanabe, Yoshihiro Ando, Toyotaka Kataoka, Satoshi Keino, Yukio Kaneda
  • Publication number: 20220149304
    Abstract: The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.
    Type: Application
    Filed: January 20, 2022
    Publication date: May 12, 2022
    Inventor: YUKIO KANEDA
  • Patent number: 11276726
    Abstract: An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, in which an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and the inorganic oxide semiconductor material layer includes at least two types of elements selected from the group consisting of indium, tungsten, tin, and zinc. Alternatively, a LUMO value E1 of a material included in a part of the photoelectric conversion layer positioned near the inorganic oxide semiconductor material layer and a LUMO value E2 of a material included in the inorganic oxide semiconductor material layer satisfy E1-E2<0.2 eV. Alternatively, the mobility of a material included in the inorganic oxide semiconductor material layer is equal to or greater than 10 cm2/V·s.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: March 15, 2022
    Assignees: Sony Corporation, Sony Semiconductor Solutions Corporation
    Inventors: Toshiki Moriwaki, Yukio Kaneda
  • Patent number: 11264580
    Abstract: The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: March 1, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yukio Kaneda
  • Publication number: 20220059592
    Abstract: A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.
    Type: Application
    Filed: October 19, 2021
    Publication date: February 24, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yukio KANEDA
  • Publication number: 20220045292
    Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.
    Type: Application
    Filed: August 23, 2021
    Publication date: February 10, 2022
    Inventors: YUKIO KANEDA, RYOJI ARAI, TOSHIKI MORIWAKI