Abstract: A solid-state imaging device (1) according to the present disclosure includes a photoelectric conversion portion (30) including a first electrode (31), a photoelectric conversion layer (34) electrically connected to the first electrode (31), and a second electrode (35) provided on a surface on a light incidence side of the photoelectric conversion layer (34). The photoelectric conversion layer (34) has a protrusion region (34a) that protrudes from the second electrode (35) when seen in a plan view.

Abstract: A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

Abstract: A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.

Abstract: An imaging element (photoelectric conversion element) includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a composite oxide layer 23B containing indium-gallium-zinc composite oxide is formed. The composite oxide layer 23B includes a first layer 23B1 adjacent to the first electrode 21 and a second layer 23B2 adjacent to the photoelectric conversion layer 23A. The first layer 23B1 has a higher indium composition than the second layer 23B2, or the first layer 23B1 has a higher gallium composition than the second layer 23B2, or the first layer 23B1 has a higher zinc composition than the second layer 23B2.

Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

Abstract: An imaging element includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, an inorganic oxide semiconductor material layer 23B is formed in contact with the photoelectric conversion layer 23A. The photoelectric conversion unit further includes an insulating layer 82 and a charge accumulation electrode 24 disposed apart from the first electrode 21 so as to face the inorganic oxide semiconductor material layer 23B via the insulating layer 21. A material constituting the inorganic oxide semiconductor material layer 23B has a value of work function of 4.5 eV or less. A value obtained by subtracting the value of work function of the material constituting the inorganic oxide semiconductor material layer 23B from a value of work function of a material constituting the second electrode 22 exceeds 0.2 eV.

Abstract: An imaging element (photoelectric conversion element) includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a composite oxide layer 23B containing indium-gallium-zinc composite oxide is formed. The composite oxide layer 23B includes a first layer 23B1 adjacent to the first electrode 21 and a second layer 23B2 adjacent to the photoelectric conversion layer 23A. The first layer 23B1 has a higher indium composition than the second layer 23B2, or the first layer 23B1 has a higher gallium composition than the second layer 23B2, or the first layer 23B1 has a higher zinc composition than the second layer 23B2.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, in which an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and the inorganic oxide semiconductor material layer includes at least two types of elements selected from the group consisting of indium, tungsten, tin, and zinc. Alternatively, a LUMO value E1 of a material included in a part of the photoelectric conversion layer positioned near the inorganic oxide semiconductor material layer and a LUMO value E2 of a material included in the inorganic oxide semiconductor material layer satisfy E1?E2<0.2 eV. Alternatively, the mobility of a material included in the inorganic oxide semiconductor material layer is equal to or greater than 10 cm2/V·s.

Abstract: A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

Abstract: The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.