Patents by Inventor Yukio Kaneko

Yukio Kaneko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10859904
    Abstract: During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: December 8, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10815586
    Abstract: A GaAs-based compound semiconductor crystal includes a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 100 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, and a ratio R20/R10 of a specific resistance R20 at the second end surface side to a specific resistance R10 at the first end surface side is more than or equal to 1 and less than or equal to 2.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: October 27, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yukio Ishikawa, Hidetoshi Takayama, Hirokazu Oota, Shuuichi Kaneko
  • Publication number: 20200286229
    Abstract: An image diagnostic device that obtains a prediction model indicating a higher accuracy diagnosis prediction result includes: an observation unit that collects an image of an examination object; and an image processing unit that generates first image data from the image, and performs image processing of the first image data. The image processing unit is provided with: a feature extraction unit that extracts a first feature from the first image data; a feature transformation unit that converts the first feature to a second feature to be extracted from second image data; and an identification unit that calculates a prescribed parameter value using the converted second feature. The feature extraction unit includes a prediction model learned using a plurality of combinations of the first image data and feature, and the feature transformation unit includes a feature transformation model learned using a plurality of combinations of the first and second features.
    Type: Application
    Filed: February 27, 2020
    Publication date: September 10, 2020
    Applicant: Hitachi, Ltd.
    Inventors: Masahiro OGINO, Yukio KANEKO, Zisheng LI, Yoshihisa SOTOME
  • Publication number: 20200286214
    Abstract: Image processing using a machine learning model is enabled, thereby accurately reducing noise to improve image quality. A medical image is acquired; and it is evaluated whether noise in the medical image exceeds a predetermined reference value. A noise reducer reduces the noise of the medical image that has been determined to include noise that exceeds the reference value. The noise of the medical image is reduced using a machine learning model constructed by collecting a plurality of learning data sets that include an image with noise as input data and an image without noise as output data. The machine learning model includes a plurality of layers that perform convolution on an image that is input, one layer of which includes a filter layer in which a plurality of linear or nonlinear filters are incorporated, and convolution coefficients of the plurality of linear or nonlinear filters are predetermined.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 10, 2020
    Inventors: Yukio KANEKO, Masahiro OGINO, Yoshimi NOGUCHI, Yoshitaka BITO
  • Publication number: 20200264502
    Abstract: A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takuro KOSAKA, Yukio INAZUKI, Hideo KANEKO
  • Publication number: 20200249561
    Abstract: During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.
    Type: Application
    Filed: April 21, 2020
    Publication date: August 6, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takuro KOSAKA, Yukio INAZUKI, Hideo KANEKO
  • Patent number: 10678125
    Abstract: A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: June 9, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10670957
    Abstract: During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: June 2, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10585345
    Abstract: A photomask blank (1) having: a transparent substrate (10); a first film (11) etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film (12) formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si—Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: March 10, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shigeo Irie, Takashi Yoshii, Keiichi Masunaga, Yukio Inazuki, Hideo Kaneko, Toyohisa Sakurada
  • Patent number: 10563454
    Abstract: A heat-ray-blocking fluororesin film includes a heat-ray-blocking metal oxide and a hydrotalcite-type compound represented by Chemical Formula [1], wherein the content of the hydrotalcite-based compound is 0.03 to 1.0 wt %. The heat-ray-blocking fluororesin can exhibit excellent heat-ray-blocking performance while keeping the properties inherent in fluororesin films such as mechanical properties, transparency and long-term weatherability and is transparent and can be used out of doors for a long period of time, wherein Mg2+1?a.Al3+a(OH?)2.ANn?a/n.cH2O where 0.2?a?0.35 and 0?c?1; ANn? indicates n-valent anion.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: February 18, 2020
    Assignees: Toray Advanced Film Co., Ltd., Toyo Ink SC Holdings Co., Ltd., Toyocolor Co., Ltd.
    Inventors: Kazuyuki Imaizumi, Yukio Noguchi, Atsushi Kimoto, Shinichi Tamura, Yoshihiro Kaneko, Takashi Horiguchi, Masayasu Kawamura
  • Publication number: 20200026181
    Abstract: A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is provided. The halftone phase shift film includes at least one layer composed of a silicon base material having a transition metal content ?3 at %, a Si+N+O content ?90 at %, a Si content of 30-70 at %, a N+O content of 30-60 at %, and an O content ?30 at %, and having a sheet resistance ?1013/?/?. The halftone phase shift film undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and has chemical resistance and improved processability.
    Type: Application
    Filed: September 27, 2019
    Publication date: January 23, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yukio INAZUKI, Takuro KOSAKA, Kouhei SASAMOTO, Hideo KANEKO
  • Patent number: 10488750
    Abstract: In a mask blank comprising a transparent substrate and a single layer or multilayer film formed thereon, the film is formed only on the front surface of the substrate, but not on the side surface, chamfer, front surface-chamfer boundary, and back surface-chamfer boundary. The mask blank contains few particle defects, especially the number of particle defects with a certain size is zero.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: November 26, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yukio Inazuki, Hideo Kaneko
  • Publication number: 20190352800
    Abstract: A GaAs-based compound semiconductor crystal includes a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 100 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, and a ratio R20/R10 of a specific resistance R20 at the second end surface side to a specific resistance R10 at the first end surface side is more than or equal to 1 and less than or equal to 2.
    Type: Application
    Filed: September 14, 2017
    Publication date: November 21, 2019
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yukio ISHIKAWA, Hidetoshi TAKAYAMA, Hirokazu OOTA, Shuuichi KANEKO
  • Patent number: 10466583
    Abstract: A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is provided. The halftone phase shift film includes at least one layer composed of a silicon base material having a transition metal content?3 at %, a Si+N+O content?90 at %, a Si content of 30-70 at %, a N+O content of 30-60 at %, and an O content?30 at %, and having a sheet resistance?1013/?/?. The halftone phase shift film undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and has chemical resistance and improved processability.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: November 5, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yukio Inazuki, Takuro Kosaka, Kouhei Sasamoto, Hideo Kaneko
  • Patent number: 10459333
    Abstract: A halftone phase shift film is formed on a transparent substrate by reactive sputtering using a silicon target, an inert gas, and a nitrogen-containing reactive gas. A hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In a transition mode sputtering step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: October 29, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10451701
    Abstract: With an MRI apparatus using a transmission coil having multiple channels, a region desired to be diagnosed is efficiently imaged with high image quality. The MRI apparatus comprises a region setting means for setting a region in an imaging region, of which high quality image is desired to be obtained, as a first region, and an optimization means for determining at least one of amplitude and phase of a radio frequency wave transmitted to each of the multiple channels as a radio frequency magnetic field condition, and the optimization means determines the radio frequency magnetic field condition so that at least one of specific absorption ratio and signal value of a region that generates artifacts is not higher than a predetermined value defined for each, under a uniformity constraint condition that uniformity of radio frequency magnetic field distribution in the first region is not lower than a predetermined value.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: October 22, 2019
    Assignee: HITACHI, LTD.
    Inventors: Yukio Kaneko, Hideta Habara, Yoshihisa Soutome, Yoshitaka Bito
  • Patent number: 10372030
    Abstract: A halftone phase shift mask blank is provided comprising a transparent substrate and a halftone phase shift film which is composed of a silicon base material having a Si+N+O content of at least 90 at %, a Si content of 30-70 at %, a N+O content of 30-60 at %, and an O content of up to 30 at %, and has a thickness of up to 70 nm. The halftone phase shift film is thin enough for mask pattern processing, undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and maintains a necessary phase shift and transmittance.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: August 6, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Kouhei Sasamoto, Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10350588
    Abstract: In a state where an operator performs operation using a safety cabinet while confirming standard operating procedures and sample data, a display device such as a monitor screen provided in the safety cabinet is arranged at a position that is not subject to effects of deterioration due to diffused reflection of light from a fluorescent lamp or sterilization lamp irradiation, and that does not generate resistance in an airflow path, while also protecting the display device from decontamination operation and preventing dirt from being adhered to a portion related to display.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: July 16, 2019
    Assignee: Hitachi Industrial Equipment Systems Co., Ltd.
    Inventors: Takeshi Kaneko, Hirotoshi Sato, Yukio Mori, Yukiyasu Sano
  • Patent number: 10241161
    Abstract: Provided is a technique capable of achieving safety and image quality at the same time in an MRI device using a transmission coil including plural channels. An SAR distribution is calculated, and an imaging parameter is determined for optimizing a radio frequency magnetic field distribution in an imaging region while suppressing a maximum value of an SAR to be equal to or smaller than a predetermined threshold value. The determined imaging parameter includes a radio frequency magnetic field parameter for specifying radio frequency pulses to be transmitted through each of the plural channels. The SAR distribution is calculated using a database that retains an electric field distribution of each of the plural channels for each subject model retained in advance.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: March 26, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Yukio Kaneko, Yoshihisa Soutome, Hisaaki Ochi
  • Publication number: 20180085026
    Abstract: When an electrical characteristic of a predetermined region of a subject placed in a static magnetic field space is measured by using magnetic resonance signals measured from the region, measurement data measured by coinciding direction of a tissue structure of the subject with the direction of the static magnetic field, and measurement data measured with a direction of the tissue structure of the subject crossing the direction of the static magnetic field are used. A rotating magnetic field map of the region is created from the measurement data, and the electrical characteristic is calculated by using the rotating magnetic field map. The electrical characteristic is calculated as an electrical characteristic including anisotropy by using information about the direction of tissue structure.
    Type: Application
    Filed: September 12, 2017
    Publication date: March 29, 2018
    Inventors: Yukio KANEKO, Hisaaki OCHI, Yoshihisa SOUTOME