Abstract: A process chamber of an epitaxial growth apparatus is directed to a process chamber configured to perform reaction processing on a semiconductor substrate, which includes a susceptor supported and disposed in the process chamber by a shaft member supporting only a central portion in a radial direction and extending in an upward/downward direction, and on which the semiconductor substrate is placed, a finger plate wafer lift disposed below the susceptor and configured to be movable in an axial direction of the shaft member, and a lift pin configured to displace the semiconductor substrate upward from an upper surface of the susceptor to approach the finger plate wafer lift to the susceptor, and a through-hole through which the lift pin passes is formed in the susceptor.