Abstract: A semiconductor chip of the present invention has a wiring substrate and a chip part. The wiring substrate has an insulating resin layer having a first major surface and a second major surface, and a first wiring layer disposed on the insulating resin layer on the second major surface side. The chip part has a projection electrode on the bottom surface. The insulating resin layer holds the chip part such that the bottom and side surfaces of the chip part are in contact with the insulating resin layer, and the top surface of the chip part is exposed on the insulating layer on the first major surface side. The projection electrode of the chip part is connected with the first wiring layer.

Abstract: A method for producing semiconductor or metal particles comprises the steps of: storing a semiconductor or metal melt in a crucible having a nozzle; supplying a gas comprising at least one selected from the group consisting of He, Ne, Ar, Kr and Xe into the crucible such that the pressure of the supplied gas in a space over the melt in the crucible is higher than the pressure of a gaseous phase into which the melt is dropped; dropping the melt from the nozzle into the gaseous phase by the pressure of the gas to form liquid particles; and solidifying the liquid particles in the gaseous phase to obtain semiconductor or metal particles. The crucible comprises at least one selected from the group consisting of hexagonal BN, cubic BN, Si3N4, TiB2, ZrB2, zirconia and stabilized zirconia at least near the nozzle.

Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.

Abstract: A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.

Abstract: In centerless grinding there are the in-feed and the through-feed scheme, each having their respective advantages and disadvantages. When a work being machined by centerless grinding has plural portions being machined, those portions can be distinguished as portions being machined suitable for in-feed and portions being machined suitable for through-feed. Then, the present invention, using the same centerless machine, performs through-feed grinding in the first half of the process, then automatically switches from that and performs in-feed grinding in the latter half of the process. Thus, in a single piece of work being machined, sites suited to through-feed grinding are subjected to through-feed grinding, and sites suited to in-feed grinding are subjected to in-feed grinding. Not only so, but it is unnecessary to alter the setup between the first half of the process and the latter half of the process, wherefore centerless grinding can be performed very efficiently.

Abstract: A proximity sensor 717 comprising a combination of an arbitrarily selected one of a plurality of types of detection end modules 707, a plurality of types of output circuit modules 709 and a plurality of types of outer shell cases 711. The detection end module 707 includes an integrated arrangement having a detection coil assembly 705, 701, 702) with the detection characteristic self-completed by a mask conductor 700 for reducing the conductor detection sensitivity in a specific peripheral area where the outer shell case is assumed to exist, and a detection circuit assembly (703) with the coil of the detection coil assembly as a resonance circuit element. The characteristics of the proximity sensor are completely adjusted before shipment. As a result, the adjustment of the characteristics which otherwise might be required each time is eliminated even in the case of the combination with an outer shell case of a different material.

Abstract: A server 1 and client 2 have system clock synchronous means 9, 14 for synchronizing a system clocks 6, 12 to the Internet Standard Time, storing means 4, 11 for arranging and storing a plurality of log-in IDs for authenticating said server 1 and client 2 mutually, and log-in ID changing means 8, 13 for searching repeatedly from the top to the bottom of a plurality of log-in IDs stored in said storing means 4, 11, and updating a log-in ID searched at predetermined intervals as the most current log-in ID every time searching.

Abstract: An image processing apparatus is disclosed that, when falling in failures possibly being fixable by switching off/on electric power, is able to be automatically and appropriately rebooted and does not involve disagreement in counts of different counters used for management actions in the course of rebooting process. The image processing apparatus, which has hardware resources used for image formation and programs used for controlling the image formation, includes a failure detection unit to detect a rebooting failure from type A or D failures which are possibly fixable by switching off/on electric power of the image processing apparatus, and a reboot unit to reboot the hardware resources and the programs. The image processing apparatus may further include an operation halting unit to halt operations of the hardware resources and the programs when the rebooting failure is detected.

Abstract: A method for producing semiconductor or metal particles comprises the steps of: storing a semiconductor or metal melt in a crucible having a nozzle; supplying a gas comprising at least one selected from the group consisting of He, Ne, Ar, Kr and Xe into the crucible such that the pressure of the supplied gas in a space over the melt in the crucible is higher than the pressure of a gaseous phase into which the melt is dropped; dropping the melt from the nozzle into the gaseous phase by the pressure of the gas to form liquid particles; and solidifying the liquid particles in the gaseous phase to obtain semiconductor or metal particles. The crucible comprises at least one selected from the group consisting of hexagonal BN, cubic BN, Si3N4, TiB2, ZrB2, zirconia and stabilized zirconia at least near the nozzle.

Abstract: A heat plate includes projections for supporting half-etched portions of first signal connection leads, respectively. A lead frame having a resin film mounted thereon is mounted on the heat plate, and thin metal wires are respectively connected to the half-etched portions of the first signal connection leads. Even when the thin metal wire is connected to the half-etched portion of each first signal connection lead, pressing force and heat can be effectively applied to the connection.

Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.

Abstract: In a fuel injection valve, a cylindrical valve body has a valve seat protruding radially inward out of an inner wall thereof and a needle supporting cylindrical inner wall. A nozzle needle is fixed to the armature so as to move together with the armature, while being supported slidably by the needle supporting cylindrical inner wall. The nozzle needle is provided with a valve portion to be seated on the valve seat when a coil is de-energized and inside thereof with a cavity into which fuel is introduced. A fuel accumulation bore is provided between inner circumference of the cylindrical valve body and outer circumference of the nozzle needle. With the construction mentioned above, the nozzle needle is provided with an opening through which the cavity communicates with the fuel accumulation bore.

Abstract: A heat plate includes projections for supporting half-etched portions of first signal connection leads, respectively. A lead frame having a resin film mounted thereon is mounted on the heat plate, and thin metal wires are respectively connected to the half-etched portions of the first signal connection leads. Even when the thin metal wire is connected to the half-etched portion of each first signal connection lead, pressing force and heat can be effectively applied to the connection.

Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.

Abstract: A lead frame including signal-connecting leads, a die pad and support leads is provided. A semiconductor chip is bonded to the die pad with an adhesive. The semiconductor chip, electrode pads and the signal-connecting leads are electrically connected to each other with metal fine wires. And these members are encapsulated in a resin encapsulant. The back surface of the die pad is subjected to half etching or the like to form a convex portion and a flange portion surrounding the convex portion. Since a thin layer of the resin encapsulant exists under the flange portion, the resin encapsulant can hold the die pad more strongly and the moisture resistance of the device can be improved with the lower surface of the die pad protruding from the resin encapsulant. As a result, the characteristics of a resin-molded semiconductor device having a die pad exposed on the back surface of a resin encapsulant can be improved.

Abstract: In centerless grinding there are the in-feed and the through-feed scheme, each having their respective advantages and disadvantages.

Abstract: A server 1 and client 2 have system clock synchronous means 9, 14 for synchronizing a system clocks 6, 12 to the Internet Standard Time, storing means 4, 11 for arranging and storing a plurality of log-in IDs for authenticating said server 1 and client 2 mutually, and log-in ID changing means 8, 13 for searching repeatedly from the top to the bottom of a plurality of log-in IDs stored in said storing means 4, 11, and updating a log-in ID searched at predetermined intervals as the most current log-in ID every time searching.

Abstract: A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Abstract: An optical memory device comprising a luminous material capable of increasing and/or memorizing a photoluminescence intensity (hereinafter referred to as a “luminous intensity”) as a function of irradiation energy of excitation light. And the luminous material comprises nanoparticles, diameters of which are smaller than Bohr radius of the luminous material so that excitons generated in the nanoparticles undergo quantum containment state in which the electrons and holes are individually contained as a result of irradiation with excitation light.