Abstract: A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.

Abstract: A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than predetermined voltage.

Abstract: A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.

Abstract: A high pressure discharge lamp has a sealing portion that is made of glass and a sealing metal piece. In a method of manufacturing the high pressure discharge lamp, the sealing metal piece is irradiated with laser beam whose pulse width is 1×10?9 seconds or less, so as to carry out a surface treatment of the sealing metal piece. The sealing metal piece may have a groove that is 120 to 600 nm in depth and 450 to 1,200 nm in width.

Abstract: In a light source device provided with a light emission tube in which a light emitting element is enclosed and at least one laser oscillator part for radiating a laser beam towards said light emission tube, for focusing a beam within a light emission tube with a large solid angle and for preventing that the beam with a high energy density impinges upon the wall of the light emission tube, the light emission tube has a tube wall, part of which is made to function as a focusing means, or the light emission tube has a focusing means at the inner surface thereof.

Abstract: A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from the switching element and electrically connected thereto. The switching element turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit includes a control circuit which controls ON/OFF the switching element and a back side voltage detection element which detects a voltage of the back side of the integrated circuit.

Abstract: An laser driven light source comprises a bulb that encloses a discharge medium, a laser beam unit for emitting a laser beam, wherein the laser beam is focused in the bulb for generating a discharge, and a beam shield element that is provided in the bulb to shield peripheral devices from the laser beam, which passes through the discharge generated in the bulb.

Abstract: A light source device that irradiates a discharge vessel with a laser beam to produce radiant light that is reflected by an ellipsoidal reflecting surface efficiently utilizes the light produced by directing the laser beam through an unirradiated region where reflected light from the ellipsoidal reflector is blocked by the discharge vessel, through an opening side of the ellipsoidal reflector to the discharge vessel. The discharge vessel has an emission substance enclosed inside which is excited by the laser beam and produces radiant light, is arranged at a focal point of the ellipsoidal reflector. A planar mirror, with which radiant light reflected by the ellipsoidal reflector is reflected in a different direction has a window in an unirradiated region where reflected light from the ellipsoidal reflector is blocked by the discharge vessel through which the laser beam passes to the discharge vessel.

Abstract: A light source is provided. The light source includes: an elliptical reflection mirror having first and second focal points; a discharge chamber in which a luminescent substance is enclosed and which is disposed on the first focal point; a laser light generator which emits the laser light; and a laser light guide which guides the laser light from an opening side of the elliptical reflection mirror into the discharge chamber. The luminescent substance is excited by providing the laser light to the luminescent substance so as to emit light, and the light is reflected by the elliptical reflection mirror. The laser light guide is disposed in a shade area in which the light reflected by the elliptical reflection mirror is blocked by the discharge chamber.

Abstract: To provide a flickerless discharge lamp which can remove hydrogen by a simple and safe means even if the lamp is a large discharge lamp with high pressure when lit, the discharge lamp has a pair of electrodes and a hydrogen getter (4) in the interior of an arc tube, the hydrogen getter (4) being formed of a container (41) made of metal which is hydrogen permeable and a hydrogen absorbent body (42) that is composed of a metal which can absorb hydrogen that is enclosed inside of the container (41) and is fixed to an inside wall of the container (41).

Abstract: An internal combustion engine ignition device is provided in which an ECU (200) includes a pulse generation circuit (201) that outputs pulse signals (Igt1 and Igt2) and an ion-signal detection/control circuit (300), and a coil driver (400) includes a pulse detection circuit (7) that recognizes a signal received from the pulse generation circuit (201) and an ion-current detection circuit (9); when the pulse signals are not outputted, an ion current is detected and a signal is outputted at the same line as a coil-driver input signal line.

Abstract: An internal combustion engine ignition device is provided in which an ECU (200) includes a pulse generation circuit (201) that outputs pulse signals (Igt1 and Igt2) and an ion-signal detection/control circuit (300), and a coil driver (400) includes a pulse detection circuit (7) that recognizes a signal received from the pulse generation circuit (201) and an ion-current detection circuit (9); when the pulse signals are not outputted, an ion current is detected and a signal is outputted at the same line as a coil-driver input signal line.

Abstract: A discharge lamp comprises a discharge container in which a sealing tube is connected to each end of an arc tube, electrodes arranged inside the arc tube, a glass member provided in the sealing tube, a metallic foil provided on an outer circumference face of the glass member, an external lead which is electrically connected to the metallic foil and which is inserted in a through hole of an external quartz tube, a low melting point glass which is formed in a gap between an inner circumference face of the through hole of the external quartz glass tube and an external circumference face of the external lead, wherein a concave portion is formed at an outer end of the through hole.

Abstract: The power semiconductor device of the present invention is provided with a conductive board 3, a switching element 1 mounted on the conductive board 3 and electrically connected thereto and an integrated circuit 4 mounted on the conductive board 3 at a distance from the switching element 1 and electrically connected thereto. The switching element 1 turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit 4 has a control circuit 72 which controls ON/OFF of the switching element 1 and a back side voltage detection element 31 which detects a voltage of the back side of the integrated circuit 4.

Abstract: A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.

Abstract: A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.

Abstract: In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.

Abstract: A substrate for epitaxial growth includes a silicon-containing substrate, a silicon-germanium film, and a network-shaped structure. The silicon-germanium film is formed lamellarly on the silicon-containing substrate. The network-shaped structure is disposed adjacent to an interface between the silicon-containing substrate and the silicon-germanium film, and is composed of a 90-degree-dislocation dislocation line elongating continuously. The 90-degree-dislocation dislocation line making the network-shaped structure elongates remarkably long without being broken to short lengths interruptedly so that the 90-degree dislocation is disposed cyclically in planes parallel to the interface. Accordingly, the 90-degree dislocation is present uniformly in planes parallel to the interface. Consequently, strains in the crystal lattice of the silicon-germanium film have been uniformly relaxed more securely.

Abstract: A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.

Abstract: A loudspeaker protective unit for protecting a loudspeaker device against an excessive input current includes a lamp connected in series with the loudspeaker unit. The lamp is housed in a casing exhibiting light-sealing properties formed of an electrically conductive material, and is sealed with a sealant exhibiting a predetermined electrical conductivity. The spacing between lead lines of the lamp housed in the casing is of a preset value. An inert gas is sealed within a main lamp body unit and a preset voltage is applied to the main lamp body unit. When the voltage is applied across the lead lines, an electrical discharge is produced to interrupt the current flowing through the filament so as to prohibit a temperature rise in the lamp.