Abstract: A substrate processing apparatus includes: a process chamber in which a substrate is processed; a substrate support configured to support the substrate in the process chamber; a plurality of reaction gas supply holes formed in a wall of the process chamber opposite to a substrate mounting surface of the substrate support; a reaction gas supply pipe that is fixed to the process chamber and communicates to each of the reaction gas supply holes; a plurality of reaction gas suppliers, each including a plasma generator installed on an upstream side of the reaction gas supply pipe; a plasma controller that is connected to the plasma generator and is configured to individually control a plurality of plasma generators; and a controller configured to control the substrate support, the plurality of reaction gas suppliers, and the plasma controller.

Abstract: A substrate processing apparatus includes: a process chamber in which a substrate is processed; a substrate support configured to support the substrate in the process chamber; a plurality of reaction gas supply holes formed in a wall of the process chamber opposite to a substrate mounting surface of the substrate support; a reaction gas supply pipe that is fixed to the process chamber and communicates to each of the reaction gas supply holes; a plurality reaction gas suppliers, each including a plasma generator installed on an upstream side of the reaction gas supply pipe; a plasma controller that is connected to the plasma generator and is configured to individually control a plurality of plasma generators; and a controller configured to control the substrate support, the plurality of reaction gas suppliers, and the plasma controller.

Abstract: There is provided a technique includes: a process chamber in which a substrate is processed; a plurality of microwave supply sources configured to supply predetermined microwaves for heating the substrate in the process chamber; and a controller configured to control the microwave supply sources such that while keeping constant a sum of outputs of the microwaves respectively supplied to the substrate from the plurality of microwave supply sources, at least one of the plurality of microwave supply sources is turned off, and periods in which the at least one of the plurality of microwave supply sources is turned off are different from each other.

Abstract: A substrate processing technology including: transferring a substrate to a process chamber and mounting the substrate on a substrate holder; heating the substrate with a heating device to perform predetermined substrate processing; determining the number of times of the predetermined substrate processing that has been performed that the predetermined substrate processing has been performed a preset number of times or more, determining whether it is necessary to adjust a mounting position at which the substrate is mounted on the substrate holder; and when it is determined that a mounting position adjustment is necessary, determining the mounting position by comparing the substrate temperature measured at the performing the predetermined substrate processing with a premeasured temperature of the substrate which corresponds to the mounting position and is stored in a memory.

Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

Abstract: Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate.

Abstract: There is provided a technology includes: heating a heat insulating plate, which is held by a substrate holder configured to hold a substrate, to a processing temperature, at which the substrate is processed, by an electromagnetic wave supplied from a heating device, and measuring a temperature change of the heat insulating plate until the heat insulating plate reaches the processing temperature; heating the substrate, to the processing temperature and measuring a temperature change of the substrate until the substrate reaches the processing temperature; obtaining a correlation between the temperature change of the heat insulating plate and the temperature change of the substrate and heating the substrate by controlling the heating device based on the temperature of the heat insulating plate and the correlation.

Abstract: According to one aspect of technique described herein, there is provided a technique including; a process chamber in which at least one substrate is processed; an electromagnetic wave supply part configured to supply an electromagnetic wave to the at least one substrate; a substrate holding part configured to hold the at least one substrate and at least one susceptor for suppressing the electromagnetic wave from being adsorbed to an edge of the at least one substrate; a substrate transfer part configured to transfer the at least one substrate; and a controller configured to control the substrate transfer part so as to correct a position of the at least one susceptor.

Abstract: A process chamber configured to process at least one substrate; at least one heating device to heat the at least one substrate using an electromagnetic wave; a non-contact type temperature measurement device configured to measure a temperature of the at least one substrate; and a controller configured to acquire temperature data measured by the temperature measurement device, compare the measured temperature with a preset upper limit temperature and a preset lower limit temperature, lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is higher than the upper limit temperature, and lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is lower than the lower limit temperature.

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common.

Abstract: In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.

Abstract: There is provided a technology includes: heating a heat insulating plate, which is held by a substrate holder configured to hold a substrate, to a processing temperature, at which the substrate is processed, by an electromagnetic wave supplied from a heating device, and measuring a temperature change of the heat insulating plate until the heat insulating plate reaches the processing temperature; heating the substrate, to the processing temperature and measuring a temperature change of the substrate until the substrate reaches the processing temperature; obtaining a correlation between the temperature change of the heat insulating plate and the temperature change of the substrate and heating the substrate by controlling the heating device based on the temperature of the heat insulating plate and the correlation.

Abstract: In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.

Abstract: Provided is a substrate processing apparatus including a substrate processing chamber configured to process a substrate; a gas supply unit configured to alternately supply a first processing gas and a second processing gas to the substrate when processing the substrate; a substrate support unit including a support mechanism configured to support a portion of a back side of the substrate and a support unit configured to support the support mechanism; a heating unit configured to heat the substrate from the back side thereof; a standby chamber configured to accommodate the substrate support unit in standby position; and a control unit configured to control at least one of the gas supply unit and a gas exhaust unit in a manner that an inner pressure of the substrate processing chamber is higher than that of the standby chamber.

Abstract: In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract: A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a gas supply unit configured to supply gas of processing the substrate; a plasma electrode device provided separately above a surface of the substrate, configured to generate plasma of activating the gas supplied from the gas supply unit; and a rotation driving unit connected to the plasma electrode device, configured to horizontally move the plasma electrode device above the substrate.

Abstract: There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract: There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts.