Abstract: A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.

Abstract: There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts.

Abstract: Provided is a substrate processing apparatus including a substrate processing chamber configured to process a substrate; a gas supply unit configured to alternately supply a first processing gas and a second processing gas to the substrate when processing the substrate; a substrate support unit including a support mechanism configured to support a portion of a back side of the substrate and a support unit configured to support the support mechanism; a heating unit configured to heat the substrate from the back side thereof; a standby chamber configured to accommodate the substrate support unit in standby position; and a control unit configured to control at least one of the gas supply unit and a gas exhaust unit in a manner that an inner pressure of the substrate processing chamber is higher than that of the standby chamber.

Abstract: Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber.

Abstract: A substrate processing apparatus includes a source gas supply system including a source gas supply pipe connected to a source gas source and a source gas supply controller; a reactive gas supply system including a reactive gas supply pipe connected to a reactive gas source, a reactive gas supply controller, a plasma generation unit and an ion trap unit and an inert gas supply pipe whereat an inert gas supply controller is disposed; a processing chamber supplied with a source gas by the source gas supply system and a reactive gas by the reactive gas supply system; and a control unit configured to control the gas supply controllers. The inert gas supply pipe has a downstream side connected between the reactive gas supply controller and the plasma generation unit and an upstream side connected to an inert gas supply source.

Abstract: A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.

Abstract: A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder further includes an upper wafer holder being placed to cover an upper surface of each of the plurality of wafers when the plurality of wafer is supported by the boat and including a gas introduction suppression part suppressing an introduction of the reaction gas onto the upper surface of each the plurality of wafers by surrounding each of the plurality of wafers.

Abstract: Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber.

Abstract: There are provided a substrate processing apparatus and a method of manufacturing a substrate in which induction heating of members made of a metal material and installed outside an induction coil is suppressed and safety may be improved during processing of a substrate. The substrate processing apparatus includes: a reaction tube for accommodating a substrate; an induction heating unit installed to surround an outer circumference of the reaction tube; a shielding unit installed to surround an outside of the induction heating unit; a gas supply unit for supplying at least a source gas into the reaction tube; and a controller for processing the substrate by heating an inside of the reaction tube using the induction heating unit, and supplying at least the source gas from the gas supply unit into the reaction tube.

Abstract: There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a substrate in a photoresist removing process. Oxygen gas and hydrogen gas are supplied to a plasma generating chamber while maintaining the hydrogen atom/oxygen atom ratio of the oxygen and hydrogen gases equal to or higher than 3, and the oxygen gas and the hydrogen gas are excited into plasma in the plasma generating chamber so as to remove photoresist from a substrate accommodated in a treatment chamber installed contiguous to the plasma generating chamber.