Abstract: A method of manufacturing a semiconductor substrate (7) includes the processes of: forming an insulation film (2) on a surface of a semiconductor substrate main body (1); forming an ion shield member (3) having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer (1a, 1b); removing the ion shield member; laminating the insulation film and a support substrate (5) onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.

Abstract: An electro-optical device includes an active matrix substrate having on the same plane a plurality of scanning lines, a plurality of signal lines provided to intersect the scanning lines, a plurality of pixel electrodes provided at the intersection portions of the scanning lines and the signal lines, and a peripheral driving circuits to matrix drive the pixel electrodes; a counter substrate having a common electrode on one surface and facing the active matrix substrate so that the common electrode is opposite to the pixel electrodes; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. In the common electrode, a portion, where the common electrode overlaps with the peripheral driving circuit or with wiring lines to supply signals to the peripheral driving circuit in plan view, is removed.

Abstract: Methods and systems are provided for securely preventing cracking or peeling of an insulating film in the periphery of a cutting portion of cutting short-circuit wiring by etching in a substrate, such as a liquid crystal device substrate that includes short-circuit wiring for a measure against static electricity. In particular, in the liquid crystal device substrate, cutting holes are provided by etching in a first interlayer insulating film and a second interlayer insulating film, which cover short-circuit wiring provided as electrostatic measure wiring, for cutting the short-circuit wiring. An etching stop layer made of a single crystal silicon film having resistance to etching of the second interlayer insulating film is formed in a wider range than the cutting holes between the short-circuit wiring and the buried oxide film.

Abstract: The invention provides a method for manufacturing a display device that includes a light-transmitting substrate and, above the light-transmitting substrate, a plurality of light-emitting elements arrayed in a plane, driving elements connected to the light-emitting elements, a bank layer disposed in the boundary areas between the plurality of light-emitting elements, and wires connected to the driving elements. In this method, the wires are formed by patterning a light-shielding, conductive layer on the light-transmitting substrate so as to have a shape in plan view corresponding to the shape of the bank layer in plan view. Then, the wires, acting as a mask, are exposed from the rear surface of the substrate to form the bank layer by self-aligning above the wires. Then, the light-emitting elements are formed in the areas surrounded by the bank layer.

Abstract: Methods and systems are provided for securely preventing cracking or peeling of an insulating film in the periphery of a cutting portion of cutting short-circuit wiring by etching in a substrate, such as a liquid crystal device substrate that includes short-circuit wiring for a measure against static electricity. In particular, in the liquid crystal device substrate, cutting holes are provided by etching in a first interlayer insulating film and a second interlayer insulating film, which cover short-circuit wiring provided as electrostatic measure wiring, for cutting the short-circuit wiring. An etching stop layer made of a single crystal silicon film having resistance to etching of the second interlayer insulating film is formed in a wider range than the cutting holes between the short-circuit wiring and the buried oxide film.

Abstract: A method of manufacturing an electro-optical apparatus substrate (10), includes the processes of: forming a light shield layer on one surface of an optically transparent substrate; patterning the light shield layer to thereby form a patterned light shield layer (11a) at least in a formation region of each transistor element (30) to be formed; forming a first insulation layer (12A) above the one surface of the optically transparent substrate above which the patterned light shield layer has been formed; forming a second insulation layer (12B) having a polishing rate lower than that of the first insulation layer, on the first insulation layer; polishing a surface of the second insulation layer; laminating a single crystal silicon layer (206) on the polished surface of the second insulation layer; and forming the each transistor element by using the single crystal silicon layer.

Abstract: The invention provides an electrooptical device, such as a liquid-crystal device that presents a high-contrast, bright and high-quality image, by reducing a malfunction due to a transverse electric field in an electrooptical material, such as a liquid crystal. The electrooptical device includes pixel electrodes on a TFT array substrate and a counter electrode on a counter substrate. Arranged beneath the pixel electrodes in the TFT array substrate are protrusions in an area facing a spacing between adjacent pixel electrodes. The method for manufacturing such an electrooptical device includes: forming a pattern including a wiring, a TFT, etc. on the TFT array substrate; planarizing the surface of a laminate of the substrate including the pattern; and forming the protrusion by subjecting the planarized surface to photolithographic and etching processes.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: To prevent the substrate floating effect that is caused when a transistor channel region fabricated of a monocrystal silicon layer covered with an insulator is in a floating state, and to stabilize the electrical characteristics of the transistor. A channel region of a semiconductor layer includes an extension portion. The end of the extension portion is connected to a contact hole. The contact hole is in turn connected to an interconnect line. The interconnect line is configured with one end thereof connected to the contact hole and with the other end connected to a contact hole leading to a light-shielding layer.

Abstract: A method of manufacturing a semiconductor substrate includes the processes of: forming an insulation film on a surface of a semiconductor substrate main body; forming an ion shield member having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer; removing the ion shield member; laminating the insulation film and a support substrate onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.

Abstract: In a liquid crystal panel substrate having a layered film structure of interlayer insulation films and metal layers alternately formed on a semiconductor substrate provided with a transistor region for pixel selection thereon, to provide a configuration for achieving a uniform polishing rate without thickening of the interlayer insulation film to be polished. A liquid crystal panel substrate is provided with a shading film 12 composed of a second metal layer in a pixel region, a second interlayer insulation film 11 under the shading film, a wiring film 10 composed of a first metal layer under the second interlayer insulation film, a pixel electrode composed of a third metal layer on a third interlayer insulation film 13 on the shading film, and a connecting plug 15 connecting the wiring film 10 and the pixel electrode through an opening provided in the shading film 12.

Abstract: A method for manufacturing a display device including a light-transmitting substrate and, above the light-transmitting substrate, a plurality of light-emitting elements arrayed in a plane, driving elements connected to the light-emitting elements, a bank layer disposed in the boundary areas between the plurality of light-emitting elements, and wires connected to the driving elements. In this method, the wires are formed by patterning a light-shielding, conductive layer on the light-transmitting substrate so as to have a shape in plan view corresponding to the shape of the bank layer in plan view. Then, the wires, acting as a mask, are exposed from the rear surface of the substrate to form the bank layer by self-aligning above the wires. Then, the light-emitting elements are formed in the areas surrounded by the bank layer.

Abstract: In a liquid crystal panel substrate having a layered film structure of interlayer insulation films and metal layers alternately formed on a semiconductor substrate provided with a transistor region for pixel selection thereon, to provide a configuration for achieving a uniform polishing rate without thickening of the interlayer insulation film to be polished. A liquid crystal panel substrate is provided with a shading film 12 composed of a second metal layer in a pixel region, a second interlayer insulation film 11 under the shading film, a wiring film 10 composed of a first metal layer under the second interlayer insulation film, a pixel electrode composed of a third metal layer on a third interlayer insulation film 13 on the shading film, and a connecting plug 15 connecting the wiring film 10 and the pixel electrode through an opening provided in the shading film 12.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: A method of manufacturing a semiconductor substrate (7) includes the processes of: forming an insulation film (2) on a surface of a semiconductor substrate main body (1); forming an ion shield member (3) having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer (1a, 1b); removing the ion shield member; laminating the insulation film and a support substrate (5) onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.

Abstract: In a liquid crystal panel substrate having a layered film structure of interlayer insulation films and metal layers alternately formed on a semiconductor substrate provided with a transistor region for pixel selection thereon, to provide a configuration for achieving a uniform polishing rate without thickening of the interlayer insulation film to be polished. A liquid crystal panel substrate is provided with a shading film 12 composed of a second metal layer in a pixel region, a second interlayer insulation film 11 under the shading film, a wiring film 10 composed of a first metal layer under the second interlayer insulation film, a pixel electrode composed of a third metal layer on a third interlayer insulation film 13 on the shading film, and a connecting plug 15 connecting the wiring film 10 and the pixel electrode through an opening provided in the shading film 12.

Abstract: A method of manufacturing an electro-optical apparatus substrate (10), includes the processes of: forming a light shield layer on one surface of an optically transparent substrate; patterning the light shield layer to thereby form a patterned light shield layer (11a) at least in a formation region of each transistor element (30) to be formed; forming a first insulation layer (12A) above the one surface of the optically transparent substrate above which the patterned light shield layer has been formed; forming a second insulation layer (12B) having a polishing rate lower than that of the first insulation layer, on the first insulation layer; polishing a surface of the second insulation layer; laminating a single crystal silicon layer (206) on the polished surface of the second insulation layer; and forming the each transistor element by using the single crystal silicon layer.

Abstract: A electro-optical device and manufacturing method are provided for an electro-optical device that has the step of forming a light shielding layer on one side of a light transmissive substrate, patterning the light shielding layer, forming an insulating layer on the patterned light shielding layer, planarizing the insulating layer, bonding a model crystalline silicon layer on the surface of the planarized insulating layer, and forming a transistor element from the monocrystalline silicon layer, wherein the patterned light shielding layer is arranged in an area facing the transistor element and in a peripheral area surrounding the transistor element.

Abstract: The invention provides an electrooptical device, such as a liquid-crystal device that presents a high-contrast, bright and high-quality image, by reducing a malfunction due to a transverse electric field in an electrooptical material, such as a liquid crystal. The electrooptical device includes pixel electrodes on a TFT array substrate and a counter electrode on a counter substrate. Arranged beneath the pixel electrodes in the TFT array substrate are protrusions in an area facing a spacing between adjacent pixel electrodes. The method for manufacturing such an electrooptical device includes: forming a pattern including a wiring, a TFT, etc. on the TFT array substrate; planarizing the surface of a laminate of the substrate including the pattern; and forming the protrusion by subjecting the planarized surface to photolithographic and etching processes.