Abstract: According to an embodiment, a first alignment mark includes a first template-side mark in which a plurality of first portions are arranged with a first period, and a second template-side mark in which a plurality of second portions are arranged with a second period. A second alignment mark includes a first wafer-side mark in which a plurality of third portions are arranged with a third period, and a second wafer-side mark in which a plurality of fourth portions are arranged with a fourth period. The first wafer-side mark and the first template-side mark are configured to be overlaid with each other to constitute a first moire mark. The second wafer-side mark and the second template-side mark are configured to be overlaid with each other to constitute a second moire mark. An average period of the first moire mark and an average period of the second moire mark are different from each other.

Abstract: According to an embodiment, a first alignment mark includes a first template-side mark in which a plurality of first portions are arranged with a first period, and a second template-side mark in which a plurality of second portions are arranged with a second period. A second alignment mark includes a first wafer-side mark in which a plurality of third portions are arranged with a third period, and a second wafer-side mark in which a plurality of fourth portions are arranged with a fourth period. The first wafer-side mark and the first template-side mark are configured to be overlaid with each other to constitute a first moire mark. The second wafer-side mark and the second template-side mark are configured to be overlaid with each other to constitute a second moire mark. An average period of the first moire mark and an average period of the second moire mark are different from each other.

Abstract: In the method of correcting a mask pattern according to the embodiments, a mask pattern correction amount for a reference flare value is calculated as a reference mask correction amount, for every type of patterns within the layout, and a change amount of the mask pattern correction amount corresponding to the change amount of the flare value is calculated as the change amount information. A mask pattern corresponding to the flare value of the pattern is created based on the reference mask correction amount and the change amount information corresponding to the pattern, extracted from the information having the pattern, the reference mask correction amount, and the change amount information correlated with each other, and based on a difference between the flare value of the pattern and the reference flare value.

Abstract: According to one embodiment, a flare prediction method in photolithography includes determining a pattern density distribution of a pattern layout, determining an inclination of a variation in the pattern density distribution, and performing a flare calculation in a plurality of partition sizes based on the inclination of a variation in the pattern density distribution.

Abstract: In a flare value calculation method according to an embodiment, an average optical intensity is calculated for each of mask patterns in a case where an exposure process is performed on a substrate using the mask patterns. Then, pattern correction amounts for the mask patterns corresponding to the average optical intensity and information about the dimensions of the mask patterns are calculated for each mask pattern. Then, post-correction mask patterns are prepared by performing pattern correction on each of the mask patterns using the pattern correction amount. Then, a flare value of an optical system of an exposure apparatus is calculated using a pattern average density of the post-correction mask patterns.

Abstract: In the method of correcting a mask pattern according to the embodiments, a mask pattern correction amount for a reference flare value is calculated as a reference mask correction amount, for every type of patterns within the layout, and a change amount of the mask pattern correction amount corresponding to the change amount of the flare value is calculated as the change amount information. A mask pattern corresponding to the flare value of the pattern is created based on the reference mask correction amount and the change amount information corresponding to the pattern, extracted from the information having the pattern, the reference mask correction amount, and the change amount information correlated with each other, and based on a difference between the flare value of the pattern and the reference flare value.

Abstract: According to one embodiment, a flare prediction method in photolithography includes determining a pattern density distribution of a pattern layout, determining an inclination of a variation in the pattern density distribution, and performing a flare calculation in a plurality of partition sizes based on the inclination of a variation in the pattern density distribution.

Abstract: In a flare value calculation method according to an embodiment, an average optical intensity is calculated for each of mask patterns in a case where an exposure process is performed on a substrate using the mask patterns. Then, pattern correction amounts for the mask patterns corresponding to the average optical intensity and information about the dimensions of the mask patterns are calculated for each mask pattern. Then, post-correction mask patterns are prepared by performing pattern correction on each of the mask patterns using the pattern correction amount. Then, a flare value of an optical system of an exposure apparatus is calculated using a pattern average density of the post-correction mask patterns.

Abstract: According to one embodiment, evaluation map creating method is disclosed. The method determines number (N) of times on changing division starting position of layout for segmenting the layout into areas M to create the map by segmenting the layout into areas m and obtaining evaluation value v corresponding to area m (P1). The layout is divided by areas M larger than area m by changing the position, centers of k pieces of areas mk among areas m coincide centers of k pieces of areas M among areas M (P2). Pattern densities D of the layout in areas M is obtained (P3). Evaluation values Vk on areas Mk are calculated by convolving pattern density D for each of areas M with distribution function F (P4). The P2-P4 are repeated N times and obtained N pieces of evaluation values Vk are synthesized (P5).

Abstract: A method of correcting a flare comprising: calculating a distribution of a flare value corresponding to pattern data on the pattern data as a flare map; calculating an occupancy of a pattern having a predetermined flare value on the pattern data as a flare value occupancy for each flare value, by using the flare map; determining a reference flare value to be a reference of the flare value based on the distribution of the flare value occupancy; and performing a pattern correction corresponding to the flare value with a pattern correction amount at the reference flare value as a reference.

Abstract: A photomask is washed and at least one physical amount of transmittance and phase difference of the photomask, dimension of a pattern, height of the pattern and a sidewall shape of the pattern is measured. After this, the two-dimensional shape of a borderline pattern previously determined for the photomask is measured. Lithography tolerance is derived by performing a lithography simulation for the measured two-dimensional shape by use of the measured physical amount. Then, whether the photomask can be used or not is determined based on the derived lithography tolerance.

Abstract: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

Abstract: A method of correcting a flare comprising: calculating a distribution of a flare value corresponding to pattern data on the pattern data as a flare map; calculating an occupancy of a pattern having a predetermined flare value on the pattern data as a flare value occupancy for each flare value, by using the flare map; determining a reference flare value to be a reference of the flare value based on the distribution of the flare value occupancy; and performing a pattern correction corresponding to the flare value with a pattern correction amount at the reference flare value as a reference.

Abstract: A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.

Abstract: A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.

Abstract: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

Abstract: A photomask is washed and at least one physical amount of transmittance and phase difference of the photomask, dimension of a pattern, height of the pattern and a sidewall shape of the pattern is measured. After this, the two-dimensional shape of a borderline pattern previously determined for the photomask is measured. Lithography tolerance is derived by performing a lithography simulation for the measured two-dimensional shape by use of the measured physical amount. Then, whether the photomask can be used or not is determined based on the derived lithography tolerance.

Abstract: A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judg

Abstract: A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judg

Abstract: A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.