Abstract: The purpose of the present invention is to provide a scanning electron microscope that achieves an increase in both resolution and pattern recognition capability. In order to achieve the purpose, the present invention proposes a scanning electron microscope provided with a monochromator that makes an electron beam monochromatic, the monochromator including a magnetic field generator that deflects the electron beam, and an energy selection aperture that passes a part of the electron beam deflected by the magnetic field generator. An aperture that passes some of electrons emitted from the sample and a detector that detects the electrons that have passed through the aperture are disposed on a trajectory to which the electrons emitted from the sample are deflected by a magnetic field generated by the magnetic field generator.

Abstract: Provided is a charged particle beam device to improve energy solution of its energy filter. In one embodiment, a charged particle beam device includes a deflector to deflect charged particles emitted from a sample to an energy filter, and a change in brightness value with the change of voltage applied to the energy filter is found for each of a plurality of deflection conditions for the deflector, and a deflection condition such that a change in the brightness value satisfies a predetermined condition is set as the deflection condition for the deflector.

Abstract: It is an object of the present invention to provide a scanning electron microscope for discriminating an angle of an electron ejected from a sample without providing an opening for restricting the angle at outside of an axis. In order to achieve the object described above, there is proposed a scanning electron microscope which includes a deflector to deflect an irradiating position of an electron beam, and a control unit to control the deflector, and further includes a detector to detecting an electron provided by irradiating a sample with the electron beam, an opening configuring member arranged between the detector and the deflector and having an opening for passing the electron beam, and a secondary signal deflector to deflect an electron ejected from the sample, in which the secondary signal deflector is controlled to deflect the electron ejected from the sample toward an opening of passing the electron beam in accordance with a deflection control of the deflector.

Abstract: Provided is a charged particle beam device to improve energy solution of its energy filter. In one embodiment, a charged particle beam device includes a deflector to deflect charged particles emitted from a sample to an energy filter, and a change in brightness value with the change of voltage applied to the energy filter is found for each of a plurality of deflection conditions for the deflector, and a deflection condition such that a change in the brightness value satisfies a predetermined condition is set as the deflection condition for the deflector.

Abstract: Provided is a photo-curable nanoimprint composition that has excellent properties in terms of etching resistance, dispersibility, and productivity. In addition, the photo-curable nanoimprint composition enables easy transcription of patterns even when a mold is pressed with a relatively low pressure. The photo-curable nanoimprint composition includes: (A) partial hydrolysate obtained by hydrolyzing a mixture of an organic silicon compound and a silicon compound containing (meth)acrylic groups with water in the molar amount of not less than 0.1 times but less than 1.0 times with respect to the number of moles of all alkoxy groups present in the mixture; (B) polymerizable monomer containing (meth)aclyic groups; and (C) pothopolymerization initiator. In addition, the mixture of partial hydrolysate (A) may include further partial hydrolysate of fluorinated silicone compound and/or metal oxide.

Abstract: In a method of scanning a charged particle beam which can position the scan position to a proper location inside a deflectable range of the scan position of charged particle beam, the scan position of charged particle beam is deflected to a plurality of target objects inside a scan position deflectable region and on the basis of a shift of a target object at a scan location after deflection, the deflection amount at the scan location is corrected.

Abstract: A charged particle beam apparatus can be constructed with a smaller size (resulting in a small installation space) and a lower cost, suppress vibration, operate at higher speed, and be reliable in inspection. The charged particle beam apparatus is largely effective when a wafer having a large diameter is used. The charged particle beam apparatus includes: a plurality of inspection mechanisms, each of which is mounted on a vacuum chamber and has a charged particle beam mechanism for performing at least an inspection on the sample; a single-shaft transfer mechanism that moves the sample between the inspection mechanisms in the direction of an axis of the single-shaft transfer mechanism; and a rotary stage that mounts the sample thereon and has a rotational axis on the single-shaft transfer mechanism. The single-shaft transfer mechanism moves the sample between the inspection mechanisms in order that the sample is placed under any of the inspection mechanisms.

Abstract: A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.

Abstract: Disclosed is a vaccine which has a high therapeutic effect on mycoplasma infection and is highly safe. For the purpose of developing effective therapeutic methods for mycoplasma infection, mycoplasma-mimic particles which are effective as a vaccine for mycoplasma infection are provided, and also provided are bacterium-mimic particles including common bacteria. Bacterium-mimic particles such as mycoplasma-mimic particles can be provided by producing liposome particles in which a lipid antigen specific to a pathogenic bacterium such as mycoplasma is contained as a liposome-constituting lipid component. The administration of the mycoplasma-mimic particles enables the induction of a potent immunological activity in living bodies. The mycoplasma-mimic particles can be used as an excellent vaccine for the prevention or treatment of mycoplasma infection.

Abstract: A lip categorizing method uses the size and shape of the lips as viewed from the front of the face as a first categorization index and the three-dimensional form of the lips as a second categorization index. The lip categorizing map is composed of a first coordinate axis showing the degree of the first categorization index and a second coordinate axis showing the degree of the second categorization index and has a coordinate system in which the first and second coordinate axes are orthogonal. It also generates makeup information for two-dimensionally correcting the lips of a subject based on preset reference by setting a plurality of points for determining the form features of lips on an image that depicts the lips, and judges the form features of the lips of the subject based on analytical values of the two-dimensional features of the lips measured from the set points.

Abstract: In a method of scanning a charged particle beam which can position the scan position to a proper location inside a deflectable range of the scan position of charged particle beam, the scan position of charged particle beam is deflected to a plurality of target objects inside a scan position deflectable region and on the basis of a shift of a target object at a scan location after deflection, the deflection amount at the scan location is corrected.

Abstract: The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.

Abstract: In a method of scanning a charged particle beam which can position the scan position to a proper location inside a deflectable range of the scan position of charged particle beam, the scan position of charged particle beam is deflected to a plurality of target objects inside a scan position deflectable region and on the basis of a shift of a target object at a scan location after deflection, the deflection amount at the scan location is corrected.

Abstract: The invention relates to a trajectory correction method for a charged particle beam, and provides a low-cost, high accuracy and high-resolution converging optical system for use with a charged particle beam to solve problems with conventional aberration correction systems. To this end, the present invention uses a configuration which forms electromagnetic field which is concentrated towards a center of a beam trajectory axis, causes oblique of the beam to make use of lens effects and bend the trajectory, and consequently, cancels out large external side non-linear effects such a spherical aberration of the electron lens. Specifically, the configuration generates an electric field concentration in a simple manner by providing electrodes above the axis and applying voltages to the electrodes. Further, the above configuration can be realized trough operations using lenses and deflectors with incident axes and image formation positions that are normal.

Abstract: In a charged-particle beam apparatus having a high-accuracy and high-resolution focusing optical system for charged-particle beam, a group of coils are arranged along a beam emission axis to extend through the contour of radial planes each radiating from the beam emission axis representing a rotary axis and each having a circular arc which subtends a divisional angle resulting from division of a circumferential plane by a natural number larger than 2 so that a superposed magnetic field may be generated on the incident axis of the charged-particle beam and the trajectory of the charged-particle beam may be controlled by the superposed magnetic field.

Abstract: In a charged-particle beam apparatus having a high-accuracy and high-resolution focusing optical system for charged-particle beam, a group of coils are arranged along a beam emission axis to extend through the contour of radial planes each radiating from the beam emission axis representing a rotary axis and each having a circular arc which subtends a divisional angle resulting from division of a circumferential plane by a natural number larger than 2 so that a superposed magnetic field may be generated on the incident axis of the charged-particle beam and the trajectory of the charged-particle beam may be controlled by the superposed magnetic field.

Abstract: A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5.

Abstract: When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.

Abstract: A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.

Abstract: A charged particle beam apparatus can be constructed with a smaller size (resulting in a small installation space) and a lower cost, suppress vibration, operate at higher speed, and be reliable in inspection. The charged particle beam apparatus is largely effective when a wafer having a large diameter is used. The charged particle beam apparatus includes: a plurality of inspection mechanisms, each of which is mounted on a vacuum chamber and has a charged particle beam mechanism for performing at least an inspection on the sample; a single-shaft transfer mechanism that moves the sample between the inspection mechanisms in the direction of an axis of the single-shaft transfer mechanism; and a rotary stage that mounts the sample thereon and has a rotational axis on the single-shaft transfer mechanism. The single-shaft transfer mechanism moves the sample between the inspection mechanisms in order that the sample is placed under any of the inspection mechanisms.