Abstract: A rechargeable transition metal battery includes a negative electrode, a positive electrode and an electrolyte. The negative electrode includes a negative electrode material which is a transition metal or an alloy of the transition metal. The positive electrode is electrically connected to the negative electrode and includes a host material and a positive electrode material. The host material includes a carbon. The positive electrode material is connected to the host material, and the positive electrode material is a compound of a metal, an elemental chalcogen or an elemental halogen. The electrolyte is disposed between the positive electrode and the negative electrode.

Abstract: A method for recovering a valuable material from a perovskite solar cell includes immersing a perovskite solar cell device in an organic solvent to dissolve a monovalent metal cation, a divalent metal cation, and two halogen anions in the organic solvent, followed by adding an oxidizing agent and conducting a heating treatment to form a solid phase residue and a halogen molecule, dissolving the halogen molecule in deionized water to form a halogen solution, rinsing the solid phase residue with deionized water to obtain a solid phase and a liquid phase, calcining the solid phase into a metal oxide, or mixing the solid phase with the halogen solution to obtain a first metal halide, subjecting the liquid phase to an extraction treatment to form an oil phase layer, followed by conducting a back-extraction treatment, adding the halogen solution, and conducting a vacuum concentration treatment to obtain a second metal halide.

Abstract: A rechargeable transition metal battery includes a negative electrode, a positive electrode and an electrolyte. The negative electrode includes a negative electrode material which is a transition metal or an alloy of the transition metal. The positive electrode is electrically connected to the negative electrode and includes a host material and a positive electrode material. The host material includes a carbon. The positive electrode material is connected to the host material, and the positive electrode material is a compound of a metal, an elemental chalcogen or an elemental halogen. The electrolyte is disposed between the positive electrode and the negative electrode.

Abstract: A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.

Abstract: A manufacturing method of a carbide includes steps as follows. A carbon source is provided, a contacting step, a heating step and an electrochemical step are performed. The carbon source includes an amorphous carbon and a compound. The compound is a chalcogen compound, a pnictide compound, a halide, a hydroxide or a salt of a metal or a metalloid. In the contacting step, the carbon source is disposed in an alkaline earth metal halide to form a reactant. In the heating step, the reactant is heated to form a heated reactant. In the electrochemical step, a current is applied to the heated reactant, wherein the current passes through the carbon source, so as to make the alkaline earth metal halide, the amorphous carbon and the compound react with one another to form a carbide of the metal or the metalloid.

Abstract: A manufacturing apparatus of carbide of the present disclosure includes a tank, a lid, a molten salt crucible, an electrode assembly, an air intake device and a heating device. The lid is connected to the tank to jointly delimit a compartment. The molten salt crucible is disposed in the compartment for containing a salt. The electrode assembly includes a working electrode and a counter electrode. An end of the working electrode and an end of the counter electrode both contact the salt in the molten salt crucible, and the end of the working electrode contacting the salt is for fixing a reactant tablet. The air intake device is configured to exchange the air in the compartment. The heating device is configured to heat the compartment.

Abstract: A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.

Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Abstract: A magnetic recording device includes a substrate, an intermediate layer disposed on the substrate, a magnetic recording layer disposed on the intermediate layer, and a graphene overcoat disposed on the magnetic recording layer. The graphene overcoat includes at least one layer of a graphene monoatomic layer which is a sheet-like monoatomic layer of sp2 bonded carbon atoms. A transition layer is interposed between the graphene overcoat and the magnetic recording layer. The transition layer includes carbon and at least one metal of the magnetic recording layer.

Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.

Abstract: A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.

Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.

Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.

Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.

Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.

Abstract: A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.

Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.