Patents by Inventor Yumi Fukuda

Yumi Fukuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250040280
    Abstract: A plurality of microlenses arranged in a matrix in first and second directions orthogonal to each other; a plurality of photoelectric conversion portions, provided for each microlens of at least some of the plurality of microlenses, that perform photoelectric conversion on light that has entered the photoelectric conversion portions via the respective microlens; and a readout unit that sequentially reads out signals from the plurality of photoelectric conversion units with the first direction being a main scanning direction and the second direction being a sub-scanning direction are provided. The plurality of photoelectric conversion portions are arranged in at least one of the first and second directions, and an electric charge crosstalk rate between a plurality of photoelectric conversion portions arranged in the first direction is higher than an electric charge crosstalk rate between a plurality of photoelectric conversion portions arranged in the second direction.
    Type: Application
    Filed: October 10, 2024
    Publication date: January 30, 2025
    Inventors: KOHEI OKAMOTO, SHUNICHI WAKASHIMA, KOICHI FUKUDA, YUMI TAKAO
  • Publication number: 20250039527
    Abstract: A plurality of microlenses arranged in a matrix in first and second directions orthogonal to each other, and a plurality of photoelectric conversion portions provided for each microlens of at least some of the plurality of microlenses and configured to perform photoelectric conversion on light that has entered the photoelectric conversion portions via the each microlens are provided. The plurality of photoelectric conversion portions are arranged in at least one of the first and second directions for the plurality of photoelectric conversion portions, and in a case where influence of noise superimposed on signals read out from the plurality of photoelectric conversion units is greater in the second direction than in the first direction, the electric charge crosstalk rate between the plurality of photoelectric conversion units in the first direction is made higher than the electric charge crosstalk rate in the second direction.
    Type: Application
    Filed: October 10, 2024
    Publication date: January 30, 2025
    Inventors: KOHEI OKAMOTO, SHUNICHI WAKASHIMA, KOICHI FUKUDA, YUMI TAKAO
  • Publication number: 20250040271
    Abstract: An image sensor in which a length of a pixel portion in a first direction is longer than a length of the pixel portion in a second direction orthogonal to the first direction. The pixel portion includes: a plurality of microlenses arranged in a matrix in the first direction and the second direction, and a plurality of photoelectric conversion portions provided for each microlens of at least some of the plurality of microlenses and configured to perform photoelectric conversion on light that has entered the photoelectric conversion portions via the each microlens. The plurality of photoelectric conversion portions are arranged in at least one of the first and second directions, and an electric charge crosstalk rate between a plurality of photoelectric conversion portions arranged in the first direction is higher than that between a plurality of photoelectric conversion portions arranged in the second direction.
    Type: Application
    Filed: October 10, 2024
    Publication date: January 30, 2025
    Inventors: KOHEI OKAMOTO, SHUNICHI WAKASHIMA, KOICHI FUKUDA, YUMI TAKAO
  • Publication number: 20240313206
    Abstract: According to one embodiment, an active material is provided. The active material includes a Mo-containing niobium-titanium oxide having a monoclinic structure. A ratio I25/I24 of an intensity I25 of a second peak appearing within a range of 2? from 25.0° to 25.5° relative to an intensity I24 of a first peak appearing within a range of 2? from 23.5° to 24.5° is 0.5 or greater, according to X-ray diffraction spectroscopy for the active material.
    Type: Application
    Filed: October 12, 2023
    Publication date: September 19, 2024
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Kazuki ISE, Keigo HOSHINA
  • Patent number: 11355416
    Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: June 7, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi Fukuda, Koichi Harada, Yasushi Hattori, Maki Yonetsu, Kenji Essaki, Keiko Albessard, Yasuhiro Goto
  • Patent number: 11300693
    Abstract: The embodiments provide a radiation detection material emitting fluorescence with high intensity and short lifetime, and also provide a radiation detection device. The polycrystalline radiation detection material of the embodiment is represented by the following formula (1) TlM1-x-yRxX3-z??(1). In the formula, M is at least one metal element selected form the group consisting of Ca, Sr, Ba and Mg; R is at least one luminescence center element selected form the group consisting of Ce, Pr, Yb and Nd; X is at least one halogen element selected form the group consisting of Cl, Br and F; and x, y and z are numbers satisfying the conditions of 0?x?0.5, ?0.1?y?0.1, and ?0.5?z?1, respectively.
    Type: Grant
    Filed: September 8, 2020
    Date of Patent: April 12, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi Fukuda, Keiko Albessard, Kenji Essaki
  • Publication number: 20210296205
    Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.
    Type: Application
    Filed: August 31, 2020
    Publication date: September 23, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Koichi HARADA, Yasushi HATTORI, Maki YONETSU, Kenji ESSAKI, Keiko ALBESSARD, Yasuhiro GOTO
  • Publication number: 20210199818
    Abstract: The embodiments provide a radiation detection material emitting fluorescence with high intensity and short lifetime, and also provide a radiation detection device. The polycrystalline radiation detection material of the embodiment is represented by the following formula (1) TlM1-x-yRxX3-z??(1). In the formula, M is at least one metal element selected form the group consisting of Ca, Sr, Ba and Mg; R is at least one luminescence center element selected form the group consisting of Ce, Pr, Yb and Nd; X is at least one halogen element selected form the group consisting of Cl, Br and F; and x, y and z are numbers satisfying the conditions of 0?x?0.5, ?0.1?y?0.1, and ?0.5?z?1, respectively.
    Type: Application
    Filed: September 8, 2020
    Publication date: July 1, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Keiko ALBESSARD, Kenji ESSAKI
  • Publication number: 20210166989
    Abstract: According to one embodiment, a structure according to the embodiment includes a ? type silicon nitride type crystal phase and a Y2Si3O3N4 type crystal phase. In an X-ray diffraction pattern according to a ?-2? method of the structure, a ratio of a second peak intensity being maximum and appearing at 2?=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2?=27.03±0.1° is 0.005 or more and 0.20 or less.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 3, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Koichi HARADA, Kenji ESSAKI, Yasushi HATTORI, Yasuhiro GOTO, Keiko ALBESSARD, Maki YONETSU
  • Patent number: 9929321
    Abstract: The embodiment of the present disclosure provides a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity. The phosphor is a silicofluoride phosphor and shows an IR absorption spectrum satisfying the conditions of 0?I2/I1?0.01 and 6.7?(I3/I1)/CMn. In those conditional formulas, I1, I2 and I3 are intensities of the maximum peaks in the ranges of 1200 to 1240 cm?1, 3570 to 3610 cm?1 and 635 to 655 cm?1, respectively, and CMn is a weight percent of Mn contained the phosphor.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: March 27, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi Fukuda, Keiko Albessard, Yasushi Hattori, Seiichi Suenaga
  • Publication number: 20180040784
    Abstract: The embodiment of the present disclosure provides a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity. The phosphor is a silicofluoride phosphor and shows an IR absorption spectrum satisfying the conditions of 0?I2/I1?0.01 and 6.7?(I3/I1)/CMn. In those conditional formulas, I1, I2 and I3 are intensities of the maximum peaks in the ranges of 1200 to 1240 cm?1, 3570 to 3610 cm?1 and 635 to 655 cm?1, respectively, and CMn is a weight percent of Mn contained the phosphor.
    Type: Application
    Filed: February 28, 2017
    Publication date: February 8, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Keiko ALBESSARD, Yasushi HATTORI, Seiichi SUENAGA
  • Patent number: 9520540
    Abstract: A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the fluorescence shifting in the same direction when a peak wavelength of the blue excitation light shifts. The first phosphor is one of a yellow phosphor emitting yellow fluorescence, a green phosphor emitting green fluorescence, a yellow-green/yellow phosphor emitting yellow-green/yellow fluorescence and a red phosphor emitting red fluorescence.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: December 13, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kunio Ishida, Keiko Albessard, Yasushi Hattori, Iwao Mitsuishi, Yumi Fukuda, Ryosuke Hiramatsu, Aoi Okada, Masahiro Kato
  • Patent number: 9349925
    Abstract: A light emitting device according to embodiments includes a light emitting element emitting light with a peak wavelength of 420˜445 nm, a first phosphor emitting light with a peak wavelength of 485˜530 nm, a second phosphor emitting light with a peak wavelength of 530˜580 nm, and a third phosphor emitting light with a peak wavelength of 600˜650 nm. The device emits light having an emission spectrum that has a local minimum value of light intensity between a wavelength of 450˜470 nm or less, the local minimum value being 60% or less of a maximum value of light intensity at a longer wavelength side from the local minimum value, and the device emits light having a color temperature of 4600 K or higher and 5400 K or less.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: May 24, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Masahiro Kato, Kunio Ishida, Shinya Nunoue, Yumi Fukuda
  • Publication number: 20160083649
    Abstract: An embodiment is to provide a phosphor that has favorable temperature characteristics, that can emit yellow light with a wide half-width emission spectrum, and that has high quantum efficiency. The phosphor emits yellow light when excited with light having a luminescence peak in a wavelength range of 250 to 500 nm, and has a crystal structure that is substantially identical to the crystal structure of Sr2Al3Si7ON13. The half-width of a peak at a diffraction peak position 2? in a range of 35.2 to 35.6, detected in X-ray diffraction of the phosphor according to Bragg-Brendano method using a Cu-K? line, is 0.10° or less.
    Type: Application
    Filed: September 16, 2015
    Publication date: March 24, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Iwao MITSUISHI, Masahiro KATO, Yasushi HATTORI, Yumi FUKUDA, Keiko ALBESSARD
  • Publication number: 20160083648
    Abstract: A present embodiment is to provide a phosphor that has favorable temperature characteristics, that can emit yellow light having excellent color rendering properties, and that has high quantum efficiency. The phosphor exhibits a luminescence peak in a wavelength range of 500 to 600 nm when excited with light having a luminescence peak within a wavelength range of 250 to 500 nm. The phosphor is represented by the following formula (1): ((M1-xCe)x)2yAlzSi10-zOuNw (1) (wherein M includes at least one of Ba, Sr, Ca, Mg, Li, Na, and K, and 0<x?1, 0.8?y?1.1, 2?z?3.5, u?1, 1.8?z?u, and 13?u+w?15 are satisfied). The phosphor has a paramagnetic defect density of 5×1015 per gram or less.
    Type: Application
    Filed: September 4, 2015
    Publication date: March 24, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yumi FUKUDA, Masahiro KATO
  • Publication number: 20160087163
    Abstract: A present embodiment is to provide a phosphor that has favorable temperature characteristics, that can emit yellow light having excellent color rendering properties, and that has high quantum efficiency. The phosphor emits yellow light when excited with light having a luminescence peak in a wavelength range of 250 to 500 nm and has a crystal structure that is substantially identical to the crystal structure of Sr2Al3Si7ON13. In the average crystal structure of the phosphor determined by Rietveld analysis, the distance between an atom at coordinates corresponding to the first coordinates of Sr, M, or Ce atoms and an atom at coordinates corresponding to the 14th coordinates of O or N atoms is 2.0 to 2.6 ? in a case in which the crystal structure is analyzed, assuming that the crystal structure belongs to a space group Pna21, and is represented using crystal structure data standardization software STRUCTURE TIDY.
    Type: Application
    Filed: September 11, 2015
    Publication date: March 24, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi Fukuda, Masahiro Kato
  • Patent number: 9190582
    Abstract: A light emitting device according to embodiments includes a light emitting element emitting light having a peak wavelength of 425 nm or more and 465 nm or less, a first phosphor emitting light having a peak wavelength of 485 nm or more and 530 nm or less, a second phosphor emitting light having a peak wavelength longer than that of the first phosphor, and a third phosphor emitting light having a peak wavelength longer than that of the second phosphor. Then, when the peak wavelength of the light emitting element is ?0 (nm) and the peak wavelength of the first phosphor is ?1 (nm), a relation of 30??1??0?70 is satisfied.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: November 17, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Masahiro Kato, Yumi Fukuda, Iwao Mitsuishi
  • Patent number: 9187693
    Abstract: The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe??(1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0<x<0.2, 1.3?a?1.8, 3.5?b?4, 0.1?c?0.3, 6.7?d?7.2 and 0.01?e?0.1, respectively.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: November 17, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naotoshi Matsuda, Yumi Fukuda, Keiko Albessard, Masahiro Kato, Iwao Mitsuishi
  • Patent number: 9133391
    Abstract: According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a composition represented by Formula 1 below: (M1-xCex)2yAlzSi10-zOuNw??Formula 1 wherein M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy following conditions: 0<x?1, 0.8?y?1.1, 2?z?3.5, u?1 1.8?z?u, and 13?u+w?15.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: September 15, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi Fukuda, Iwao Mitsuishi, Keiko Albessard
  • Publication number: 20150247085
    Abstract: The embodiment of the present disclosure provides a phosphor exhibiting an emission peak in the wavelength range of 565 to 600 nm under excitation by light having a peak in the wavelength range of 250 to 500 nm. The emission peak has a half width of 115 to 180 nm inclusive. This phosphor has a crystal structure of Sr2Si7Al3ON13, and is activated by cerium.
    Type: Application
    Filed: February 27, 2015
    Publication date: September 3, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Keiko ALBESSARD, Yumi FUKUDA, Kunio ISHIDA, Iwao MITSUISHI, Aoi OKADA, Yasushi HATTORI, Ryosuke HIRAMATSU, Masahiro KATO