Patents by Inventor Yumi Fukuda
Yumi Fukuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140138583Abstract: The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M1 other than the metal element M, a tetravalent element M2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr3Al3Si13O2N21, but the chemical bond lengths of M1-N and M2-N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr3Al3Si13O2N21, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.Type: ApplicationFiled: January 23, 2014Publication date: May 22, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yumi FUKUDA, Hironori ASAI
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Patent number: 8685277Abstract: The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M1 other than the metal element M, a tetravalent element M2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr3Al3Si13O2N21, but the chemical bond lengths of M1-N and M2-N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr3Al3Si13O2N21, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.Type: GrantFiled: July 16, 2009Date of Patent: April 1, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Hironori Asai
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Publication number: 20140084782Abstract: The fluorescent substance according to the present disclosure emits luminescence with a peak in the wavelength range of 500 to 600 nm under excitation by light with a peak in the wavelength range of 250 to 500 nm, and has an optical absorption coefficient ?560nm of 4×10?5 or less at 560 nm. The substance is represented by the following formula (1): (M1-xCex)2yAlzSi10-zOuNw??(1). In the formula, M is a metal element selected from the group consisting of Ba, Sr, Ca, Mg, Li, Na and K; and x, y, z, u and w are variables satisfying the conditions of 0<x?1, 0.8?y?1.1, 2?z?3.5, u?1, 1.8?z?u and 13?u+w?15, respectively.Type: ApplicationFiled: March 18, 2013Publication date: March 27, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yumi FUKUDA, Naotoshi MATSUDA
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Publication number: 20140054500Abstract: The embodiment provides a process for production of an oxynitride fluorescent substance. In the process, a compound represented by the formula: (Sr,Eu)2Si5N8, silicon nitride and aluminum nitride are mixed and then fired in a nitrogen atmosphere under high pressure.Type: ApplicationFiled: November 7, 2013Publication date: February 27, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Naotoshi Matsuda, Yumi Fukuda, Masahiro Kato
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Patent number: 8652359Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd??(1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.63<a<0.80, 2.1<b<2.63, 0<c?0.24 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.Type: GrantFiled: February 25, 2013Date of Patent: February 18, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Aoi Okada, Yumi Fukuda, Naotoshi Matsuda, Iwao Mitsuishi, Shinya Nunoue
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Patent number: 8628686Abstract: The embodiment provides a process for production of an oxynitride fluorescent substance. In the process, a compound represented by the formula: (Sr,Eu)2Si5N8, silicon nitride and aluminum nitride are mixed and then fired in a nitrogen atmosphere under high pressure.Type: GrantFiled: February 28, 2011Date of Patent: January 14, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Naotoshi Matsuda, Yumi Fukuda, Masahiro Kato
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Patent number: 8603361Abstract: Provided is a fluorescent substance excellent in quantum efficiency and in temperature characteristics, and a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M1 other than the metal element M, a tetravalent element M2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr3Al3Si13O2N21, but the chemical bond lengths of M1-N and M2-N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr3Al3Si13O2N21, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.Type: GrantFiled: May 15, 2012Date of Patent: December 10, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Hironori Asai
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Publication number: 20130293092Abstract: The embodiment provides a process for production of a green light-emitting oxynitride fluorescent material having Sr3Al3Si13O2N21 crystal structure, and also provides the fluorescent material produced by that process. An metal halide is adopted in the process as one of the starting material metal compounds. As the metal halide, a Ca or Na compound as well as a Sr compound can be preferably employed.Type: ApplicationFiled: July 1, 2013Publication date: November 7, 2013Inventors: Yumi FUKUDA, Aoi Okada, Naotoshi Matsuda
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Patent number: 8569943Abstract: According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd??formula 1 wherein x, a, b, c and d satisfy following condition: 0<x?0.16, 0.50?a?0.70, 2.0?b?2.5 0.45?c?1.2, 3.5?d?4.5, and 3.6?d/c?8.0.Type: GrantFiled: August 31, 2012Date of Patent: October 29, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Iwao Mitsuishi, Naotoshi Matsuda, Yumi Fukuda, Keiko Albessard, Aoi Okada, Masahiro Kato, Ryosuke Hiramatsu, Yasushi Hattori, Shinya Nunoue
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Patent number: 8558251Abstract: A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.Type: GrantFiled: August 22, 2011Date of Patent: October 15, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Iwao Mitsuishi, Yumi Fukuda, Aoi Okada, Ryosuke Hiramatsu, Naotoshi Matsuda, Shinya Nunoue, Keiko Albessard, Masahiro Kato
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Patent number: 8552437Abstract: The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.Type: GrantFiled: September 3, 2010Date of Patent: October 8, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Aoi Okada, Yumi Fukuda, Takahiro Sato, Iwao Mitsuishi, Naotoshi Matsuda, Ryosuke Hiramatsu, Kunio Ishida
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Patent number: 8546824Abstract: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.Type: GrantFiled: August 22, 2011Date of Patent: October 1, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Iwao Mitsuishi, Yumi Fukuda, Aoi Okada, Naotoshi Matsuda, Shinya Nunoue, Keiko Albessard, Masahiro Kato
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Publication number: 20130241387Abstract: According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a composition represented by Formula 1 below: (M1-xCex)2yAlzSi10-zOuNw??Formula 1 wherein M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy following conditions: 0<x?1, 0.8?y?1.1, 2?z?3.5, u?1 1.8?z?u, and 13?u+w?15.Type: ApplicationFiled: August 31, 2012Publication date: September 19, 2013Inventors: Yumi FUKUDA, Iwao Mitsuishi, Keiko Albessard
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Publication number: 20130241395Abstract: The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe ??(1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0<x<0.2, 1.3?a?1.8, 3.5?b?4, 0.1?c?0.3, 6.7?d?7.2 and 0.01?3?0.1, respectively.Type: ApplicationFiled: September 11, 2012Publication date: September 19, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naotoshi Matsuda, Yumi Fukuda, Keiko Albessard, Masahiro Kato, Iwao Mitsuishi
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Publication number: 20130234585Abstract: According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008?MCa/(MSr+MCa)?0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.Type: ApplicationFiled: August 31, 2012Publication date: September 12, 2013Inventors: Keiko Albessard, Masahiro Kato, Yumi Fukuda, Iwao Mitsuishi, Takahiro Sato, Shigeya Kimura, Aoi Okada, Naotoshi Matsuda, Ryosuke Hiramatsu, Yasushi Hattori, Kunio Ishida, Hironori Asai
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Publication number: 20130229106Abstract: According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd??formula 1 wherein x, a, b, c and d satisfy following condition: 0<x?0.16, 0.50?a?0.70, 2.0?b?2.5 0.45?c?1.2, 3.5?d?4.5, and 3.6?d/c?8.0.Type: ApplicationFiled: August 31, 2012Publication date: September 5, 2013Inventors: Iwao MITSUISHI, Naotoshi MATSUDA, Yumi FUKUDA, Keiko ALBESSARD, Aoi OKADA, Masahiro KATO, Ryosuke HIRAMATSU, Yasushi HATTORI, Shinya NUNOUE
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Patent number: 8501039Abstract: The embodiment provides a process for production of a green light-emitting oxynitride fluorescent material having Sr3Al3Si13O2N21 crystal structure, and also provides the fluorescent material produced by that process. An metal halide is adopted in the process as one of the starting material metal compounds. As the metal halide, a Ca or Na compound as well as a Sr compound can be preferably employed.Type: GrantFiled: August 26, 2010Date of Patent: August 6, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Aoi Okada, Naotoshi Matsuda
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Patent number: 8491817Abstract: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2??(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0<x?1, 0.93<a2<1.3, 4.0<b2<5.8 0.6<c2<1, 6<d2<11).Type: GrantFiled: November 12, 2010Date of Patent: July 23, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Hironori Asai, Ryosuke Hiramatsu, Junichi Tatami, Katsutoshi Komeya, Toru Wakihara, Katsuko Tamatani
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Patent number: 8482192Abstract: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2??(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0<x?1, 0.93<a2<1.3, 4.0<b2<5.8 0.6<c2<1, 6<d2<11).Type: GrantFiled: November 12, 2010Date of Patent: July 9, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Hironori Asai, Ryosuke Hiramatsu, Junichi Tatami, Katsutoshi Komeya, Toru Wakihara, Katsuko Tamatani
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Patent number: 8475680Abstract: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2??(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0<x?1, 0.93<a2<1.3, 4.0<b2<5.8 0.6<c2<1, 6<d2<11).Type: GrantFiled: September 10, 2008Date of Patent: July 2, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Hironori Asai, Ryosuke Hiramatsu, Junichi Tatami, Katsutoshi Komeya, Toru Wakihara, Katsuko Tamatani