Abstract: The present disclosure is related to systems and methods for electrochemical process. The system may include a first electrode, a second electrode, an electric field distribution simulation optimizer, an electric field distribution controller, and a signal controller. The first electrode and the second electrode may form an electric field to change a substance on the second electrode. A morphology of the second electrode may be uneven. The first electrode may include an electrically conducting plate. A morphology of the electrically conducting plate may be in conformity with the morphology of the second electrode. A protruding portion of the electrically conducting plate may correspond to a recessing portion of the second electrode. A recessing portion of the electrically conducting plate may correspond to a protruding portion of the second electrode.

Abstract: A method and an apparatus are provided for training a named entity recognition (NER) model. By constructing tag annotations for tags and causing the tag annotations to contain information for indicating the positions of tokens in named entities, corresponding to the tags, respectively, in the process of training the NER model, the NER model can better understand the different positions of different tokens in the same named entity, so that the trained NER model can more accurately recognize named entities.

Abstract: This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO2 film, a Si3N4 film and a second SiO2 film stacked in this order, wherein the first SiO2 film is formed by a thermal oxidation process, the Si3N4 film is formed by a low pressure chemical vapor deposition process, and the second SiO2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.

Abstract: A SiC ohmic contact preparation method is provided and includes: selecting a SiC substrate; preparing a graphene/SiC structure by forming a graphene on a Si-face of the SiC substrate; depositing an Au film on the graphene of the graphene/SiC structure; forming a first transfer electrode pattern on the Au film by a first photolithography; etching the Au film uncovered by the first transfer electrode pattern through a wet etching; etching the graphene uncovered by the Au film through a plasma etching after the wet etching; forming a second transfer electrode pattern on the SiC substrate by a second photolithography; depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing. The graphene reduces potential barrier associated with the SiC interface, specific contact resistance of ohmic contact reaches the order of 10?7˜10?8 ?·cm2, and the method has high repeatability.

Abstract: The embodiment of the present disclosure discloses a method, an electronic device, and a storage medium for a ship route optimization. The method for the ship route optimization considers a dynamic feature of a multi-functional emergency rescue ship and an interference effect caused by an airflow, uses a movement model with kinematics non-holonomic constraints, such as a ship total cost assessment function to simulate the movement of the ship, and based on a sparrow search algorithm, learns how to apply the algorithm to a route plan of the emergency rescue ship. The method can improve the ship route optimization algorithm, improve an accuracy and practical applicability of a calculated plan. The method can effectively and accurately locate obstacles and hidden reefs, and consider effects of an airflow and a non-holonomic constraint effect, so as to make the route planning of the ship more efficient and intelligent.

Abstract: The present disclosure provides bio-imaging devices including multiple, modular channels for imaging biological substrates, and methods of using same to obtain mono- or multi-channel images of biological substrates.

Abstract: A charging system utilizing energy storage multiplication is provided. An energy storage battery pack of the charging system is directly connected to a DC power transmission bus. When the charging request is initiated by the charging device, the charging device takes the power from the DC bus, the AC-DC converter and DC-DC converter connected to the energy generation device work as the energy source to deliver power to the DC bus, the power goes through the DC bus to the charging device, and the rest of the power goes to the energy storage device or goes out form the energy storage device when the charring power is higher than total energy from all other converters. The high C rate discharging of the energy storage device means high power capacity during discharging, this can provide much high power than AC-DC converter to fulfill the requirement of charging device.

Abstract: The disclosure provides a single-stage isolated bidirectional converter and a control method thereof. The converter includes: a first full-bridge circuit unit, a half-bridge circuit unit, a second full-bridge circuit unit, a phase-shift inductor unit, a transformer and a filter capacitor. The transformer includes a first winding and a second winding, and the first winding is provided with a center tap. The center tap is connected to the first port, two ends thereof are connected to the midpoints of the two bridge arms of the first full-bridge circuit unit through the phase-shift inductor unit, and two ends of the second winding are connected to the midpoints of the two bridge arms of the second full-bridge circuit unit. Two ends of the first full-bridge circuit unit are connected to two ends of the half-bridge circuit unit; two ends of the half-bridge circuit unit are connected to two ends of the filter capacitor.

Abstract: The disclosure provides a single-stage isolated bidirectional converter and a control method thereof. The converter includes: a first full-bridge circuit unit, a half-bridge circuit unit, a second full-bridge circuit unit, a phase-shift inductor unit, a transformer and a filter capacitor. The transformer includes a first winding and a second winding, and the first winding is provided with a center tap. The center tap is connected to the first port, two ends thereof are connected to the midpoints of the two bridge arms of the first full-bridge circuit unit through the phase-shift inductor unit, and two ends of the second winding are connected to the midpoints of the two bridge arms of the second full-bridge circuit unit. Two ends of the first full-bridge circuit unit are connected to two ends of the half-bridge circuit unit; two ends of the half-bridge circuit unit are connected to two ends of the filter capacitor.

Abstract: A charging system utilizing energy storage multiplication is provided. An energy storage battery pack of the charging system is directly connected to a DC power transmission bus. When the charging request is initiated by the charging device, the charging device takes the power from the DC bus, the AC-DC converter and DC-DC converter connected to the energy generation device work as the energy source to deliver power to the DC bus, the power goes through the DC bus to the charging device, and the rest of the power goes to the energy storage device or goes out form the energy storage device when the charring power is higher than total energy from all other converters. The high C rate discharging of the energy storage device means high power capacity during discharging, this can provide much high power than AC-DC converter to fulfill the requirement of charging device.

Abstract: This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO2 film, a Si3N4 film and a second SiO2 film stacked in this order, wherein the first SiO2 film is formed by a thermal oxidation process, the Si3N4 film is formed by a low pressure chemical vapor deposition process, and the second SiO2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.

Abstract: The present disclosure is related to systems and methods for electrochemical process. The system may include a first electrode, a second electrode, an electric field distribution simulation optimizer, an electric field distribution controller, and a signal controller. The first electrode and the second electrode may form an electric field to change a substance on the second electrode. A morphology of the second electrode may be uneven. The first electrode may include an electrically conducting plate. A morphology of the electrically conducting plate may be in conformity with the morphology of the second electrode. A protruding portion of the electrically conducting plate may correspond to a recessing portion of the second electrode. A recessing portion of the electrically conducting plate may correspond to a protruding portion of the second electrode.

Abstract: The present disclosure provides a method and an apparatus for integrating pressurized hydrocracking of heavy oil and coke gasification. A coupled reactor having a cracking section and a gasification section is used in the method: a heavy oil feedstock and a hydrogenation catalyst are fed into a cracking section, to generate light oil-gas and coke; the coke is carried by the coke powder into the gasification section, to generate syngas; a regenerated coke powder is returned to the cracking section; the syngas enters the cracking section and merges with light oil-gas, and enters a gas-solid separator, to separate out first-stage solid particles and second-stage particles in sequence, and a purified oil-gas product is collected; oil-gas fractionation of the purified oil-gas product is performed, and a light oil product and a syngas product are collected. Yield and quality of the light oil can be improved by the method.

Abstract: A junction barrier schottky (JBS) diode is provided and includes: a bottom metal layer, a N+-type substrate layer and a N?-type epitaxial layer sequentially arranged in that order from bottom to top, P-type ion injection regions are disposed on an upper surface of the N?-type epitaxial layer, distances of the P-type ion injection regions are gradually increased along a direction from an edge to a center of the JBS diode; an isolation dielectric layer is arranged on a periphery of the upper surface of the N?-type epitaxial layer, an top metal layer is arranged on the upper surface of the N?-type epitaxial layer and an upper surface of the isolation dielectric layer and further is in contact with the P-type ion injection regions. The JBS diode can effectively inhibit an occurrence of local electromigration and improve a device reliability.

Abstract: A SiC ohmic contact preparation method is provided and includes: selecting a SiC substrate; preparing a graphene/SiC structure by forming a graphene on a Si-face of the SiC substrate; depositing an Au film on the graphene of the graphene/SiC structure; forming a first transfer electrode pattern on the Au film by a first photolithography; etching the Au film uncovered by the first transfer electrode pattern through a wet etching; etching the graphene uncovered by the Au film through a plasma etching after the wet etching; forming a second transfer electrode pattern on the SiC substrate by a second photolithography; depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing. The graphene reduces potential barrier associated with the SiC interface, specific contact resistance of ohmic contact reaches the order of 10?7˜10?8 ?·cm2, and the method has high repeatability.

Abstract: An integrated method and an integrated device for heavy oil contact lightening and coke gasification are provided. The integrated method uses a coupled reactor including a cracking section and a gasification section, and the integrated method includes: feeding a heavy oil material into the cracking section to implement a cracking reaction, to obtain a light oil gas and a carbon-deposited contact agent; passing the carbon-deposited contact agent into the gasification section, so as to implement a gasification reaction, to obtain a regenerated contact agent and a syngas; and discharging the light oil gas and the ascended and incorporated syngas from the cracking section, to perform a gas-solid separation, so that the carbon-deposited contact agent carried is separated and returned to the cracking section, and a purified oil gas is obtained at the same time.

Abstract: A coupling reaction apparatus for heavy oil cracking-gasification, including a cracking section and a gasification section communicated with each other, and the cracking section is located above the gasification section; the cracking section is provided with a heavy oil raw material inlet and a fluidizing gas inlet, and an upper part of the cracking section is provided with an oil-gas outlet; and the gasification section is provided with a gasification agent inlet.

Abstract: A method for heavy oil lightening and synthesis gas production and a device thereof are provided, where the method uses a cracking/gasification coupled reactor, which internally has a cracking section and a gasification section that communicate with each other, and includes the following steps: feeding a heavy oil material into the cracking section to implement a cracking reaction, to produce a light oil gas and a coke; the coke being carried by the coke powders and descending into the gasification section to implement a gasification reaction, to produce a synthesis gas; at least performing a first stage gas-solid separation, collecting coke powder particles and dividing them into two parts; performing an oil and gas fractionation on a purified oil and gas product output by the gas-solid separation system, and collecting a light oil product and a synthesis gas product.

Abstract: The present disclosure provides an integrated method and apparatus for catalytic cracking of heavy oil and production of syngas. A cracking-gasification coupled reactor having a cracking section and a gasification section is used as a reactor in the method. A heavy oil feedstock is fed into a cracking section to contact with a bed material in a fluidized state that contains a cracking catalyst, a catalytic cracking reaction is conducted under atmospheric pressure to obtain light oil-gas and coke. The coke is carried downward by the bed material into a gasification section to conduct a gasification reaction to generate syngas; the syngas goes upward into the cracking section to merge with the light oil-gas, and is guided out from the coupled reactor and enter a gas-solid separation system. Oil-gas fractionation is performed to a purified oil-gas product output from the gas-solid separation system to collect light oil and syngas products.

Abstract: A junction barrier schottky (JBS) diode is provided and includes: a bottom metal layer, a N+-type substrate layer and a N?-type epitaxial layer sequentially arranged in that order from bottom to top, P-type ion injection regions are disposed on an upper surface of the N?-type epitaxial layer, distances of the P-type ion injection regions are gradually increased along a direction from an edge to a center of the JBS diode; an isolation dielectric layer is arranged on a periphery of the upper surface of the N?-type epitaxial layer, an top metal layer is arranged on the upper surface of the N?-type epitaxial layer and an upper surface of the isolation dielectric layer and further is in contact with the P-type ion injection regions. The JBS diode can effectively inhibit an occurrence of local electromigration and improve a device reliability.