Abstract: A coupling reaction apparatus for heavy oil cracking-gasification, including a cracking section and a gasification section communicated with each other, and the cracking section is located above the gasification section; the cracking section is provided with a heavy oil raw material inlet and a fluidizing gas inlet, and an upper part of the cracking section is provided with an oil-gas outlet; and the gasification section is provided with a gasification agent inlet.

Abstract: A method for heavy oil lightening and synthesis gas production and a device thereof are provided, where the method uses a cracking/gasification coupled reactor, which internally has a cracking section and a gasification section that communicate with each other, and includes the following steps: feeding a heavy oil material into the cracking section to implement a cracking reaction, to produce a light oil gas and a coke; the coke being carried by the coke powders and descending into the gasification section to implement a gasification reaction, to produce a synthesis gas; at least performing a first stage gas-solid separation, collecting coke powder particles and dividing them into two parts; performing an oil and gas fractionation on a purified oil and gas product output by the gas-solid separation system, and collecting a light oil product and a synthesis gas product.

Abstract: The present disclosure provides a method and an apparatus for integrating pressurized hydrocracking of heavy oil and coke gasification. A coupled reactor having a cracking section and a gasification section is used in the method: a heavy oil feedstock and a hydrogenation catalyst are fed into a cracking section, to generate light oil-gas and coke; the coke is carried by the coke powder into the gasification section, to generate syngas; a regenerated coke powder is returned to the cracking section; the syngas enters the cracking section and merges with light oil-gas, and enters a gas-solid separator, to separate out first-stage solid particles and second-stage particles in sequence, and a purified oil-gas product is collected; oil-gas fractionation of the purified oil-gas product is performed, and a light oil product and a syngas product are collected. Yield and quality of the light oil can be improved by the method.

Abstract: An integrated method and an integrated device for heavy oil contact lightening and coke gasification are provided. The integrated method uses a coupled reactor including a cracking section and a gasification section, and the integrated method includes: feeding a heavy oil material into the cracking section to implement a cracking reaction, to obtain a light oil gas and a carbon-deposited contact agent; passing the carbon-deposited contact agent into the gasification section, so as to implement a gasification reaction, to obtain a regenerated contact agent and a syngas; and discharging the light oil gas and the ascended and incorporated syngas from the cracking section, to perform a gas-solid separation, so that the carbon-deposited contact agent carried is separated and returned to the cracking section, and a purified oil gas is obtained at the same time.

Abstract: The present disclosure provides an integrated method and apparatus for catalytic cracking of heavy oil and production of syngas. A cracking-gasification coupled reactor having a cracking section and a gasification section is used as a reactor in the method. A heavy oil feedstock is fed into a cracking section to contact with a bed material in a fluidized state that contains a cracking catalyst, a catalytic cracking reaction is conducted under atmospheric pressure to obtain light oil-gas and coke. The coke is carried downward by the bed material into a gasification section to conduct a gasification reaction to generate syngas; the syngas goes upward into the cracking section to merge with the light oil-gas, and is guided out from the coupled reactor and enter a gas-solid separation system. Oil-gas fractionation is performed to a purified oil-gas product output from the gas-solid separation system to collect light oil and syngas products.

Abstract: Methods and systems are provided herein for measuring 3D apparatus (e.g., manual tool or tool accessory) orientation. Example implementations use an auto-nulling algorithm that incorporates a quaternion-based unscented Kalman filter. Example implementations use a miniature inertial measurement unit endowed with a tri-axis gyro and a tri-axis accelerometer. The auto-nulling algorithm serves as an in-line calibration procedure to compensate for the gyro drift, which has been verified to significantly improve the estimation accuracy in three-dimensions, especially in the heading estimation.

Abstract: A method for manufacturing an ultraviolet photodetector based on Ga2O3 material are provided. The method includes: selecting a substrate; forming a Ga2O3 layer on an upper surface of the substrate; forming a top electrode on the Ga2O3 layer; and forming a bottom electrode on a lower surface of the substrate. Ga2O3 material is adopted, with a light transmittance in the solar blind area can reach 80% or even 90%. The Ga2O3 material is suitable for application to a light absorbing layer, and its transparent conductive electrical properties are also beneficial to improve the light absorption capacity of the light absorbing layer, thereby greatly improving the device performance of the photodetector diode.

Abstract: A solid object is rotated in the central pool of molten metal that is formed by using an arc to melt a continuously fed metal wire and depositing the melted wire between the facing edges of two base metals to be joined. The stirring generated by the rotation in the pool moves hotter metal in the central region to its boundary adjacent to the facing edges. This stirring generated movement of molten metal is expected to better heat the facing edges so that the molten metal can better fuse with the facing edges. The stirring generated fluid flow within the molten pool also changes the solidification of the molten metal and the formation of the resultant grains.

Abstract: A welding system configured to calibrate a welding torch's orientation without using a magnetometer.

Abstract: A method for manufacturing a HEMT/HHMT device based on CH3NH3PbI3 material are provided. The method includes: selecting an Al2O3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al2O3 substrate not covered by the source electrode and the drain electrode; manufacturing CH3NH3PbI3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.

Abstract: Methods and systems are provided herein for measuring 3D apparatus (e.g., manual tool or tool accessory) orientation. Example implementations use an auto-nulling algorithm that incorporates a quaternion-based unscented Kalman filter. Example implementations use a miniature inertial measurement unit endowed with a tri-axis gyro and a tri-axis accelerometer. The auto-nulling algorithm serves as an in-line calibration procedure to compensate for the gyro drift, which has been verified to significantly improve the estimation accuracy in three-dimensions, especially in the heading estimation.

Abstract: A method for manufacturing an ultraviolet photodetector based on Ga2O3 material are provided. The method includes: selecting a substrate; forming a Ga2O3 layer on an upper surface of the substrate; forming a top electrode on the Ga2O3 layer; and forming a bottom electrode on a lower surface of the substrate. Ga2O3 material is adopted, with a light transmittance in the solar blind area can reach 80% or even 90%. The Ga2O3 material is suitable for application to a light absorbing layer, and its transparent conductive electrical properties are also beneficial to improve the light absorption capacity of the light absorbing layer, thereby greatly improving the device performance of the photodetector diode.

Abstract: A method for manufacturing a HEMT/HHMT device based on CH3NH3PbI3 material are provided. The method includes: selecting an Al2O3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al2O3 substrate not covered by the source electrode and the drain electrode; manufacturing CH3NH3PbI3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.

Abstract: Methods and systems are provided herein for measuring 3D apparatus (e.g., manual tool or tool accessory) orientation. Example implementations use an auto-nulling algorithm that incorporates a quaternion-based unscented Kalman filter. Example implementations use a miniature inertial measurement unit endowed with a tri-axis gyro and a tri-axis accelerometer. The auto-nulling algorithm serves as an in-line calibration procedure to compensate for the gyro drift, which has been verified to significantly improve the estimation accuracy in three-dimensions, especially in the heading estimation.

Abstract: Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl2 reaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiO2 on the surface of the SiC sample chip and engraving a figure window on the SiO2 layer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Cl2 into the quartz tube, reacting the bare SiC with Cl2 for 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.

Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm?3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm?3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm?3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

Abstract: An oil in water lubricant fluid for use in steel cold rolling, comprising an oil in water emulsion having a particle size of 1 ?m or less, consisting of an oil phase and water, where the oil phase includes about 5 wt % to about 40 wt % of at least one polymeric surfactant, about 25 wt % to about 95 wt % base oil, about 0.2 wt % to about 10 wt % extreme pressure lubrication additives, and about 0.5 wt % to about 6 wt % other functional additives.

Abstract: Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene.

Abstract: The invention discloses a method to determine the weld joint penetration from arc voltage measurements in gas tungsten arc welding (GTAW). It is based on an observation on the dynamic weld pool surface in GTAW—the surface tends to first expand toward the electrode and then be pushed away from the electrode after full penetration is established. For the pool surface in GTAW, localized partial keyholes around the arc axis as in plasma arc welding are not significant. The pool surface is relatively smooth. The arc voltage that reflects changes in the arc length thus first tends to reduce and then increases after full penetration is established. This invention thus tracks the arc voltage until the decrease slope becomes insignificant. Once full penetration is established, the current is reduced to decrease the weld penetration or first decrease the penetration growth for a certain period and then decrease the weld penetration.

Abstract: Provided is a disclosure for a welding system configured to calibrate a welding torch's orientation without using a magnetometer.