Abstract: A system for optical data interconnect of a source and a sink includes a first HDMI compatible electrical connector able to receive electrical signals from the source. A first signal converter is connected to the first HDMI compatible electrical connector and includes electronics for conversion of TMDS or FRL electrical signals to optical signals, with the electronics including an optical conversion device. At least one optical fiber is connected to the first signal converter. A second signal converter is connected to the at least one optical fiber and includes electronics for conversion of optical signals to differential electrical signals. A power module for the second signal converter includes a power tap connected to TMDS or FRL circuitry and a first voltage regulator connected to the power tap to provide power to an electrical signal amplifier. A rechargeable battery module is used to trigger power activation of connected ports, with the battery module being connected to the power tap.

Abstract: A system for optical data interconnect of a source and a sink includes a first HDMI compatible electrical connector able to receive electrical signals from the source. A first signal converter is connected to the first HDMI compatible electrical connector and includes electronics for conversion of TMDS or FRL electrical signals to optical signals, with the electronics including an optical conversion device connectable to source ground to reduce noise. At least one optical fiber is connected to the first signal converter. A second signal converter is connected to the at least one optical fiber and includes electronics for conversion of optical signals to TMDS or FRL electrical signals. A power module for the second signal converter provides power to an electrical signal amplifier connectable to sink ground. A second HDMI compatible electrical connector is connected to the second signal converter and able to send signals to the sink.

Abstract: A method of manufacturing a grooved-gate MOSFET device based on a two-step microwave plasma oxidation, including: etching a grooved gate, and oxidizing silicon carbide on a surface of the grooved gate to silicon dioxide by microwave plasma to form a grooved-gate oxide layer, the step of forming the grooved-gate oxide layer including: placing a silicon carbide substrate subjected to the grooved gate etching in a microwave plasma generating device; introducing a first oxygen-containing gas, heating generated oxygen plasma to a first temperature at a first heating rate, and performing low-temperature plasma oxidation at the first temperature and a first pressure; heating the oxygen plasma to a second temperature at a second heating rate, introducing a second oxygen-containing gas, and performing high-temperature plasma oxidation at the second temperature and a second pressure until a predetermined thickness of silicon dioxide is formed; stopping introduction of the oxygen-containing gas, and completing the react

Abstract: A microwave plasma equipment and a method of exciting plasma are disclosed. The microwave plasma equipment includes: a plasma reaction device having a cavity in which a base support and a plasma-forming area is provided; a conversion device having gradient electrodes, the gradient electrodes being disposed inside the cavity and configured to generate a gradient electric field in the plasma-forming area; a gas supply device configured to introduce gas into the cavity of the plasma reaction device; and a microwave generating device configured to generate and transmit microwave into the cavity of the plasma reaction device.

Abstract: A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of ?/n, where ? is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities.

Abstract: This disclosure relates to methods and systems for dynamically partitioning of PCIe disk arrays based on software configuration/policy distribution. In one embodiment, at least one PCIe switch has an input port operatively connected to a respective CPU and at least one output port. A multiplexer is connected between the output port(s) of the at least one PCIe switch and a PCIe disk array, for example an NVMe SSD, and is configured to connect the PCIe disk array in a first configuration to a single PCIe switch in either one-x4 port or two x2 port mode, or in a second configuration to two PCIe switches in x2 port mode. The multiplexer can dynamically switch between the first configuration and the second configuration on the fly. Switching can occur, for example, in response to a hot-swap of an NVMe SSD or a policy change.

Abstract: A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.

Abstract: The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized P+ region and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two N+ source regions, two P+ contact regions, two P wells, one N? drift layer, one buffer layer, one N+ substrate, one drain electrode and one isolation dielectric layer.

Abstract: A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.

Abstract: A handgrip structure of a hand tool includes a handgrip body, a foldable cover and an installation set; a chamber is formed in the handgrip body, and an opening is formed at one side of the chamber; the foldable cover has one end pivoted with the handgrip body and served to cover the opening, wherein a tool accommodation room is formed between the foldable cover and the chamber of the handgrip body; and the installation set is disposed on the handgrip body and arranged corresponding to another end of the foldable cover. Accordingly, a large amount of tool heads can be stably fastened and the tool heads can be easily taken out and stored, so that features of easy in operation and convenient in storage are achieved.

Abstract: A display device is disclosed. The display device includes a display array layer and a liquid crystal control layer superimposed on a display side of the display array layer. The liquid crystal control layer includes a first electrode layer, a liquid crystal layer and a second electrode layer; the display array layer includes first pixels and second pixels alternately arranged in a first direction; and the first electrode layer and the second electrode layer are configured to receive driving voltages, so as to allow liquid crystal molecules in the liquid crystal layer to rotate to form first light deflection regions and second light deflection regions that are alternately arranged in the first direction, so as to form a first view point and a second view point.

Abstract: The present invention relates to an automatic package device, which may include a rack and a power control box provided on the rack. The cutter blade transportation device is provided on the rack along the X axis direction. Below the cutter blade transportation device and inside the rack, lower film feeding device is provided. At the rear side of the rack, the upper film feeding device is provided. At the front end of the cutter blade transportation device and on the rack are provided a blade feeding rail and cutter blade carrying device cooperating with each other. At the rear end of the cutter blade transportation device is provided a film sealing device which cooperates with the upper film feeding device and lower film feeding device. At the rear end of the film sealing device and on the rack is provided a dragging device fitting the blade strip. At the back side of the dragging device is provided a transverse cutting device fitting the blade strip.

Abstract: A method of manufacturing a grooved-gate MOSFET device based on a two-step microwave plasma oxidation, including: etching a grooved gate, and oxidizing silicon carbide on a surface of the grooved gate to silicon dioxide by microwave plasma to form a grooved-gate oxide layer, the step of forming the grooved-gate oxide layer including: placing a silicon carbide substrate subjected to the grooved gate etching in a microwave plasma generating device; introducing a first oxygen-containing gas, heating generated oxygen plasma to a first temperature at a first heating rate, and performing low-temperature plasma oxidation at the first temperature and a first pressure; heating the oxygen plasma to a second temperature at a second heating rate, introducing a second oxygen-containing gas, and performing high-temperature plasma oxidation at the second temperature and a second pressure until a predetermined thickness of silicon dioxide is formed; stopping introduction of the oxygen-containing gas, and completing the react

Abstract: A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of ?/n, where ? is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities.

Abstract: The present invention discloses an oil leaching and extraction assembly capable of repeated separation, which may include an upper rack, a leaching barrel, a separation device, a filter cylinder, a milling device and a material claiming device and a liquid renewal duct and the liquid outlet pipe are respectively provided on the upper and lower part of the leaching barrel. The separation device may include a separation drum and the liquid outlet pipe goes through the separation drum and is connected to an oil tank through the check valve. And a separation hole is provided on the part of liquid outlet pipe locating in the separation drum. For the part where separation drum is under the liquid renewal duct, a electrical heating separation block is provided with. A recycling tank plate whose forms a recycle bin with its left side board is provided on the separation drum. A circulating pump is provided in the recycle in and the circulating pump is connected to the liquid renewal duct.

Abstract: A tension transmission device as a control system for a probing portion of a three-dimensional mechanical probe is fitted to a support portion. The tension transmission device includes a driving shaft, a first tension member, and a second tension member. The driving shaft defines first and second fastening points. The first fastening point and the second fastening point are located at axially-distanced points of the driving shaft which are not diametrically opposite. The first and second tension members wind around a circumference of the driving shaft guided by a first pulley and a second pulley, to rotate and manipulate the driven shaft of the probing portion.

Abstract: The present invention relates to an automatic terminal fitting device for four-pin electrical connector which may comprise a rack, power control box and conveying device provided on the rack. A rubber shell vibration disc, a terminal fitting mechanism, and a back cover vibration disc are provided on the rack along the transporting direction. The rubber shell vibration disc is connected to the front end of the conveying device by a rubber shell transportation rail. The terminal fitting mechanism is provided on the back side of the conveying device and engages with the terminal feeding device provided on the rack. The back cover vibration disc is provided on the back side of the conveying device, to the right side of the terminal fitting mechanism. And the terminal fitting mechanism may include four sets of terminal fitting devices sequentially provided on the back side of the conveying device.

Abstract: The present invention relates to an automatic spring fastener assembly machine, including a rack and a power control box, and the rack is provided with a circulating conveying device, and a rubber casing feeding device, a fastener feeding device and a spring loading device which are in turn arranged around the circulating conveying device. The rubber casing feeding device includes a rubber casing vibration tray disposed to the left front side of the circulating conveying device, and the rubber casing feeding vibration tray is connected with a rubber casing distributing block through the rubber casing conveying track. The upper side of the circulating conveying device is provided with a rubber casing transportation manipulator, and the right front side thereof is provided with a rubber casing clamping device located below the rubber casing transportation manipulator, and a fastener pushing in device fitting the circulating conveying device is disposed under the rubber casing clamping device.

Abstract: Provided is an anti-interference semiconductor device for an optical transceiver. The semiconductor device includes: a back metallization layer, a p++ bearing wafer layer, a P-type epitaxial layer, an isolation layer and a metal layer arranged from bottom to top. The back metallization layer serves as a substrate, on which the p++ bearing wafer layer is formed. The P-type epitaxial layer is formed on the p++ bearing wafer layer. The metal layer is formed on the isolation layer. The semiconductor device includes at least two N-type heavily doped grooves, two P-type heavily doped grooves and a plurality of deep through-silicon vias, which are formed in the P-type epitaxial layer and the isolation layer. The deep through-silicon vias are distributed and divided into at least two rows. The N-type heavily doped grooves and the P-type heavily doped grooves are alternately arranged at two sides of the deep through-silicon vias.

Abstract: A single-channel high-speed low-power-consumption optical transceiver chip is provided, which comprises an optical transmitter module, an optical receiver module, and a common module, wherein the optical transmitter module comprises a data buffer, a first clock and data recovery unit, a first data selector, a laser driver, a power controller, a first clock buffer, a light-emitting diode, and a first photodiode; the optical receiver module comprises a second photodiode, a direct-current bias module, a transimpedance amplifier, a feedback resistor, a second clock and data recovery unit, a second clock buffer, a second data selector, and an output driver; the common module comprises a power supply controller, a direct-current bias, a logic controller, a serial interface, a memory, and a pseudo random data generator and checker; and the common module also provides a communication loop for the optical transmitter module and the optical receiver module.