Patents by Inventor Yun Chen

Yun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250102884
    Abstract: An optical element driving mechanism includes a fixed assembly, a first movable part and a driving assembly. The first movable part is configured to be connected to a first optical element, and the first movable part is movable relative to the fixed assembly. The driving assembly is configured to drive the first movable part to move relative to the fixed assembly.
    Type: Application
    Filed: September 24, 2024
    Publication date: March 27, 2025
    Inventors: Jui-Che MENG, Pai-Jui CHENG, Yung-Yun CHEN
  • Patent number: 12261239
    Abstract: A device for mass transfer of Mini-LEDs based on array water jet-based ejection, including a planar motion platform, a vision camera, an array water jet-type ejection unit, a Z-axis motion platform, a blue membrane, an operation platform and a transfer substrate. The vision camera and the array water jet-type ejection unit are provided on a side of the planar motion platform. The array water jet-type ejection unit includes a water jet channel and a through-hole array. The Z-axis motion platform is provided at a side of the planar motion platform near the vision camera, and is configured for placement of the blue membrane. Multiple Mini-LED chips are bonded to the blue membrane. The operation platform is spacedly provided at a side of the Z-axis motion platform away from the planar motion platform.
    Type: Grant
    Filed: July 11, 2024
    Date of Patent: March 25, 2025
    Assignee: Guangdong University of Technology
    Inventors: Yun Chen, Yanhui Chen, Li Ma, Pengwei Lv, Hao Zhang, Maoxiang Hou, Xin Chen
  • Publication number: 20250098194
    Abstract: Continuous polysilicon on oxide diffusion edge (CPODE) processes are described herein in which one or more semiconductor device parameters are tuned to reduce the likelihood of etching of source/drain regions on opposing sides of CPODE structures formed in a semiconductor device, to reduce the likelihood of depth loading in the semiconductor device, and/or to reduce the likelihood of gate deformation in the semiconductor device, among other examples. Thus, the CPODE processes described herein may reduce the likelihood of epitaxial damage to the source/drain regions, may reduce current leakage between the source/drain regions, and/or may reduce the likelihood of threshold voltage shifting for transistors of the semiconductor device. The reduced likelihood of threshold voltage shifting may provide more uniform and/or faster switching speeds for the transistors, more uniform and/or lower power consumption for the transistors, and/or increased device performance for the transistors, among other examples.
    Type: Application
    Filed: September 18, 2023
    Publication date: March 20, 2025
    Inventors: Tzu-Ging LIN, Ya-Yi TSAI, Yun-Chen WU, Shu-Yuan KU
  • Patent number: 12251428
    Abstract: A hydrogel composition, a hydrogel biomedical material, a method for facilitating regeneration of a bone and a manufacturing method of a hydrogel composition are provided. The hydrogel composition includes a first deionized water, a gel powder, a transglutaminase mixture and a hyaluronic acid powder. The gel powder includes gelatin and alginic acid. The first deionized water, the gel powder, the transglutaminase mixture and the hyaluronic acid powder are evenly mixed. Based on the hydrogel composition being 100 wt %, the first deionized water is 95 wt % to 98.46 wt %, the gel powder is 1 wt % to 3 wt %, the transglutaminase mixture is 0.04 wt % to 0.15 wt %, and the hyaluronic acid powder is 0.5 wt % to 1.5 wt %.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: March 18, 2025
    Assignee: CHINA MEDICAL UNIVERSITY
    Inventors: Cherng-Jyh Ke, Feng-Huei Lin, Chun-Hsu Yao, Jui-Sheng Sun, Ching-Yun Chen
  • Patent number: 12255171
    Abstract: In an embodiment, a wafer bonding system includes a chamber, a gas inlet and a gas outlet configured to control a pressure of the chamber to be in a range from 1×10?2 mbar to 1520 torr, a first wafer chuck having a first surface to support a first wafer, and a second wafer chuck having a second surface to support a second wafer, the second surface being opposite the first surface, the second wafer chuck and the first wafer chuck being movable relative to each other, wherein the second surface that supports the second wafer is divided into zones, wherein a vacuum pressure of each zone is controlled independently of other zones.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: March 18, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Han-De Chen, Yun Chen Teng, Chen-Fong Tsai, Jyh-Cherng Sheu, Huicheng Chang, Yee-Chia Yeo
  • Patent number: 12254089
    Abstract: Behavior report generation monitors the behavior of unknown sample files executing in a sandbox. Behaviors are encoded and feature vectors created based upon a q-gram for each sample. Prototypes extraction includes extracting prototypes from the training set of feature vectors using a clustering algorithm. Once prototypes are identified in this training process, the prototypes with unknown labels are reviewed by domain experts who add a label to each prototype. A K-Nearest Neighbor Graph is used to merge prototypes into fewer prototypes without using a fixed distance threshold and then assigning a malware family name to each remaining prototype. An input unknown sample can be classified using the remaining prototypes and using a fixed distance. For the case that no such prototype is close enough, the behavior report of a sample is rejected and tagged as an unknown sample or that of an emerging malware family.
    Type: Grant
    Filed: December 11, 2023
    Date of Patent: March 18, 2025
    Assignee: Trend Micro Incorporated
    Inventors: Yin-Ming Chang, Hsing-Yun Chen, Hsin-Wen Kung, Li-Chun Sung, Si-Wei Wang
  • Publication number: 20250089324
    Abstract: A gate oxide layer for a high voltage transistor is formed using methods that avoid thinning in the corners of the gate oxide layer. A recess is formed in a silicon substrate. The exposed surfaces of the recess are thermally oxidized to form a thermal oxide layer of the gate oxide layer. A high temperature oxide layer of the gate oxide layer is then formed within the exposed surfaces of the recess by chemical vapor deposition. The combination of the thermal oxide layer and the high temperature oxide layer results in a gate oxide layer that does not exhibit the double hump phenomenon in the drain current vs. gate voltage curve. The high temperature oxide layer may include a rim that extends out of the recess.
    Type: Application
    Filed: September 8, 2023
    Publication date: March 13, 2025
    Inventors: Jhu-Min Song, Yi-Kai Ciou, Chi-Te Lin, Yi-Huan Chen, Szu-Hsien Liu, Chan-Yu Hung, Chien-Chih Chou, Fei-Yun Chen
  • Publication number: 20250083955
    Abstract: Disclosed is a full temperature range simulated rotated moving pressure swing adsorption (FTrSRMPSA) enhanced reaction hydrogen generation process from a shifted gas. Multiple axial flow fixed bed adsorption reactors placed on a multi-channel rotary valve and ring-shaped rotary tray, and blended and loaded with medium and low-temperature shift catalysts and adsorbents are connected through a pipeline, and rotating directions and rotating speeds of the rotary valve and ring-shaped rotary tray are regulated. Therefore, gases complete mass and heat transfer of respective conversion reaction-adsorption and desorption regeneration steps by constantly coming in and going out of inlets and outlets of adsorption reactors to achieve a simulated rotated moving bed pressure swing adsorption enhanced reaction process. Hydrogen (H2) product gases are directly obtained therefrom, and have the purity and yield of greater than or equal to 99.9-99.99% and 92-95%, respectively. High purity carbon dioxide (CO2) is co-produced.
    Type: Application
    Filed: August 21, 2024
    Publication date: March 13, 2025
    Inventors: LANHAI WANG, YALING ZHONG, YUN CHEN, JINCAI TANG, YUMING ZHONG, YUEMING CAI
  • Publication number: 20250083280
    Abstract: Provided in the present invention are a dynamic collection device for an oil film and temperature distribution in a grinding zone and an operating method thereof. A spectroscope and a 45-degree flat mirror are utilized to carry out optical imaging of the permeation and infiltration of the grinding fluid in a grinding zone during a grinding process, and a video signal imported into a high-speed camera is converted into a digital signal processed by a CCD photosensitive element, and a dynamic image is imported for dynamic collection. Infrared radiation emitted from the grinding zone is reflected through the 45-degree flat mirror, and transmitted to the thermal imaging camera, and the signal is transmitted to an internal infrared detector. The infrared detector adjusts and amplifies the received signal and outputs it to an infrared thermal imaging chip. After image processing, the temperature distribution image is imported for dynamic collection.
    Type: Application
    Filed: July 19, 2023
    Publication date: March 13, 2025
    Applicant: QINGDAO UNIVERSITY OF TECHNOLOGY
    Inventors: Yanbin ZHANG, Wenyi LI, Xin CUI, Changhe LI, Zongming ZHOU, Shuaiqiang XU, Bo LIU, Yun CHEN
  • Patent number: 12249592
    Abstract: A method includes placing a first wafer on a first wafer stage, placing a second wafer on a second wafer stage, and pushing a center portion of the first wafer to contact the second wafer. A bonding wave propagates from the center portion to edge portions of the first wafer and the second wafer. When the bonding wave propagates from the center portion to the edge portions of the first wafer and the second wafer, a stage gap between the top wafer stage and the bottom wafer stage is reduced.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: March 11, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Han-De Chen, Cheng-I Chu, Yun Chen Teng, Chen-Fong Tsai, Jyh-Cherng Sheu, Huicheng Chang, Yee-Chia Yeo
  • Publication number: 20250081509
    Abstract: Some embodiments relate to an integrated circuit device incorporating an etched recessed gate dielectric region. The integrated circuit device includes a substrate including a first upper surface, a gate dielectric region disposed at the first upper surface of the substrate and extending into the substrate, and a gate structure disposed over the gate dielectric region. The gate dielectric region includes a second upper surface and forms a recess extending below the second upper surface. The second upper surface includes a perimeter portion surrounding the recess. The gate structure completely covers the second upper surface of the gate dielectric region and extends into the recess.
    Type: Application
    Filed: August 29, 2023
    Publication date: March 6, 2025
    Inventors: Jhu-Min Song, Yi-Kai Ciou, Chi-Te Lin, Ying-Chou Chen, Jiou-Kang Lee, Yi-Huan Chen, Chien-Chih Chou, Fei-Yun Chen
  • Publication number: 20250075002
    Abstract: The present disclosure provides for multi-specific antibodies and antigen-binding fragments thereof that bind to human MUC1 and CD16A, pharmaceutical compositions comprising said antibodies, and use of the antibodies or the compositions for treating a disease, such as cancer.
    Type: Application
    Filed: September 6, 2024
    Publication date: March 6, 2025
    Applicant: BeiGene Switzerland GmbH
    Inventors: Hui LI, Qiansheng REN, Liang QU, Ming JIANG, Qi LIU, Xin CHEN, Yun CHEN, Liu XUE, Wenjie WANG, Jie PAN, Zhuo LI, Xiaoyan TANG, Chichi HUANG, Ting SHAO
  • Publication number: 20250081493
    Abstract: A continuous metal on diffusion edge (CMODE) may be used to form a CMODE structure in a semiconductor device after a replacement gate process that is performed to replace the polysilicon dummy gate structures of the semiconductor device with metal gate structures. The CMODE process described herein includes removing a portion of a metal gate structure (as opposed to removing a portion of a polysilicon dummy gate structure) to enable formation of the CMODE structure in a recess left behind by removal of the portion of the metal gate structure.
    Type: Application
    Filed: September 5, 2023
    Publication date: March 6, 2025
    Inventors: Tzu-Ging LIN, Chen-Yu TAI, Chun-Liang LAI, Yun-Chen WU, Shun-Hui YANG
  • Publication number: 20250074776
    Abstract: The present invention provides a method for preparing an activated carbon, which includes impregnating a carbonaceous material with carbonated water; and exposing the carbonaceous material to microwave radiation to produce the activated carbon.
    Type: Application
    Filed: September 1, 2023
    Publication date: March 6, 2025
    Inventors: Feng-Huei LIN, Chih-Chieh CHEN, Chih-Wei LIN, Chi-Hsien CHEN, Yue-Liang GUO, Ching-Yun CHEN, Chia-Ting CHANG, Che-Yung KUAN, Zhi-Yu CHEN, I-Hsuan YANG
  • Patent number: 12245086
    Abstract: According to some embodiments, a method performed by a network node for mobility management comprises obtaining data samples for modeling a wireless network environment that comprises a plurality of cells and building a machine learning model of the wireless network using the obtained data samples. The machine learning model is trained to determine a sequence of handovers for a wireless device among the plurality of cells for the wireless device to traverse from a source cell to a destination cell. The method further comprises receiving mobility information for a wireless device, determining one or more handover operations for the wireless device based on the mobility information, and transmitting the one or more handover operations to the wireless device.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: March 4, 2025
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: Xingqin Lin, Yun Chen, Mohammad Mozaffari, Talha Khan
  • Patent number: 12234633
    Abstract: A prefabricated reinforced concrete beam-column connecting structure and a construction method thereof are provided. The prefabricated reinforced concrete beam-column connecting structure includes an upper prefabricated column, a lower prefabricated column, a prefabricated beam, an upper column transfer member, a lower column transfer member, and a connecting slot of beam main reinforcement. The lower column transfer member is sleeved on an upper end portion of the lower prefabricated column. A first horizontal load transfer plate is arranged in the lower column transfer member. An upper end portion of a lower column main reinforcement is anchored at a top of the first horizontal load transfer plate. The upper column transfer member is sleeved on a lower end portion of the upper prefabricated column. A second horizontal load transfer plate is arranged in the upper column transfer member.
    Type: Grant
    Filed: November 7, 2023
    Date of Patent: February 25, 2025
    Assignee: HAINAN UNIVERSITY
    Inventors: Yun Chen, Jia Qin, Zhikang Chen
  • Patent number: 12237211
    Abstract: A method of forming a semiconductor device includes mounting a bottom wafer on a bottom chuck and mounting a top wafer on a top chuck, wherein one of the bottom chuck and the top chuck has a gasket. The top chuck is moved towards the bottom chuck. The gasket forms a sealed region between the bottom chuck and the top chuck around the top wafer and the bottom wafer. An ambient pressure in the sealed region is adjusted. The top wafer is bonded to the bottom wafer.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chieh Chang, Chen-Fong Tsai, Yun Chen Teng, Han-De Chen, Jyh-Cherng Sheu, Huicheng Chang, Yee-Chia Yeo
  • Publication number: 20250063750
    Abstract: The present disclosure describes a structure with a conductive plate and a method for forming the structure. The structure includes a gate structure disposed on a diffusion region of a substrate, a protective layer in contact with the diffusion region and covering a sidewall of the gate structure and a portion of a top surface of the gate structure, and a first insulating layer in contact with the gate structure and the protective layer. The structure further includes a conductive plate in contact with the first insulating layer, where a first portion of the conductive plate laterally extends over a horizontal portion of the protective layer, and where a second portion of the conductive plate extends over a sidewall portion of the protective layer covering the sidewall of the gate structure. The structure further includes a second insulating layer in contact with the conductive plate.
    Type: Application
    Filed: November 7, 2024
    Publication date: February 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chan-Yu HUNG, Chia-Cheng Ho, Fei-Yun Chen, Yu-Chang Jong, Puo-Yu Chiang, Tun-Yi Ho
  • Patent number: 12226081
    Abstract: The present invention discloses a capsule endoscope, which comprises an enclosure, and an imaging unit, a data processing unit and an antenna unit arranged in the enclosure. The enclosure comprises a cylindrical middle enclosure and two hemispherical covers connected to both ends of the middle enclosure, and the antenna unit is arranged close to the inner surface of the middle enclosure. The antenna unit is arranged close to the inner surface of the middle enclosure. Such arrangement can save internal space and improve the space utilization, and also, the arrangement of the antenna unit does not affect the layout of the imaging unit.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: February 18, 2025
    Assignees: ANKON TECHNOLOGIES CO., LTD., ANX IIP HOLDING PTE. LTD.
    Inventors: Fanhua Ming, Bo Feng, Rong Wang, Yun Chen, Xinhong Wang, Xiaodong Duan, Guohua Xiao
  • Patent number: D1063855
    Type: Grant
    Filed: January 5, 2023
    Date of Patent: February 25, 2025
    Assignee: WANKA TECHNOLOGY LIMITED
    Inventors: Shuai Peng, Yun Chen, Zhiwei Chen