Abstract: An integrated packaging assembly for an MMIC that uses the semiconductor wafers on which circuit elements are fabricated as the package. The packaging assembly includes a plurality of semiconductor layers that have been diced from the semiconductor wafers, where the semiconductor layers can be made of different semiconductor material. The semiconductor layers define cavities therebetween in which circuit components are fabricated. A sealing ring seals the semiconductor layers together so as to hermetically seal the circuit components within the cavities.

Abstract: Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.

Abstract: An integrated packaging assembly for an MMIC that uses the semiconductor wafers on which circuit elements are fabricated as the package. The packaging assembly includes a plurality of semiconductor layers that have been diced from the semiconductor wafers, where the semiconductor layers can be made of different semiconductor material. The semiconductor layers define cavities therebetween in which circuit components are fabricated. A sealing ring seals the semiconductor layers together so as to hermetically seal the circuit components within the cavities.

Abstract: Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.

Abstract: A common source, bi-directional microwave amplifier is described. More particularly, the present invention is a microwave, common source, bi-directional amplifier that includes a first amplification path and a second amplification path wherein the signal directional flow is controlled through the selective biasing of the first amplification path and the second amplification path. Each amplification path is designed to optimize desired performance. For signal flow through the first amplification path, the first amplification path is biased-on and the second path is biased-off. For signal flow through the second amplification path, the second amplification path is biased-on and the first path is biased-off.

Abstract: An electronically programmable multimode circuit is described. More particularly, the present invention is an electronically programmable multimode circuit that includes a first path and a second path wherein a mode and a signal directional flow direction is controlled through the selective biasing of the first path and the second path. A multimode circuit is produced that contains modes such as a phase shifter mode, an IQ modulation mode, an amplifier mode, a mixer mode, and a multiplier mode.

Abstract: An electronically programmable multimode circuit is described. More particularly, the present invention is an electronically programmable multimode circuit that includes a first path and a second path wherein a mode and a signal directional flow direction is controlled through the selective biasing of the first path and the second path. A multimode circuit is produced that contains modes such as a phase shifter mode, an IQ modulation mode, an amplifier mode, a mixer mode, and a multiplier mode.

Abstract: A common source, bi-directional microwave amplifier is described. More particularly, the present invention is a microwave, common source, bi-directional amplifier that includes a first amplification path and a second amplification path wherein the signal directional flow is controlled through the selective biasing of the first amplification path and the second amplification path. Each amplification path is designed to optimize desired performance. For signal flow through the first amplification path, the first amplification path is biased-on and the second path is biased-off. For signal flow through the second amplification path, the second amplification path is biased-on and the first path is biased-off.

Abstract: A bi-directional amplifier (10) for a transceiver module for amplifying both transmit signals and receive signals propagating in opposite directions. The amplifier (10) includes first and second common gate FETs (22, 24) electrically coupled along a common transmission line (20). A first variable matching network (28) is electrically coupled to the transmission line (20) between a transmit signal input port (12) and the first FET (22), and a second variable matching network (30) is electrically coupled to the transmission line (20) between a receive signal input port (14) and the second FET (24). An interstage variable matching network (32) is electrically coupled to the transmission line (20) between the first and second FETs (22, 24). A DC voltage regulator (34) provides a DC bias signal to the matching networks (28, 30, 32) and the FETs (22, 24) so that different signal amplifications and different impedance matching characteristics can be provided for the transmit signal and the receive signal.

Abstract: A bi-directional amplifier (10) for a transceiver module for amplifying both transmit signals and receive signals propagating in opposite directions. The amplifier (10) includes first and second common gate FETs (22, 24) electrically coupled along a common transmission line (20). A first variable matching network (28) is electrically coupled to the transmission line (20) between a transmit signal input port (12) and the first FET (22), and a second variable matching network (30) is electrically coupled to the transmission line (20) between a receive signal input port (14) and the second FET (24). An interstage variable matching network (32) is electrically coupled to the transmission line (20) between the first and second FETs (22, 24). A DC voltage regulator (34) provides a DC bias signal to the matching networks (28, 30, 32) and the FETs (22, 24) so that different signal amplifications and different impedance matching characteristics can be provided for the transmit signal and the receive signal.