Abstract: The present disclosure provides antibodies and antigen-binding fragments thereof that bind to human CCR8, a pharmaceutical composition comprising said antibody, and use of the antibody or the composition for treating a disease, such as cancer.

Abstract: One aspect of the present disclosure pertains to a semiconductor device. The semiconductor device includes a semiconductor substrate and a transistor formed over the semiconductor substrate. The transistor includes a first source/drain (S/D) feature, a second S/D feature, a channel region interposed between the first and second S/D features, and a gate stack engaging the channel region. The semiconductor device includes a first S/D contact landing on a top surface of the first S/D feature, a second S/D contact landing on a top surface of the second S/D feature, and a dielectric plug penetrating through the semiconductor substrate and landing on a bottom surface of the first S/D feature. The dielectric plug spans a width equal to or smaller than a width of the first S/D feature.

Abstract: An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is disposed on the first dielectric layer, the second dielectric layer is disposed on the first dielectric layer and surrounds the sidewalls of the first conductive feature, the barrier layer is disposed between the first dielectric layer and the second dielectric layer and between the sidewalls of the first conductive feature and the second dielectric layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first low dielectric constant (low-k) layer, a first metal layer, a metal cap layer, a dielectric on dielectric (DoD) layer, an etch stop layer (ESL), a second low-k layer, a metal via and a second metal layer. The dielectric constant of the first low-k layer is less than 4. The first metal layer is embodied in the first low-k layer. The first low-k layer exposes the first metal layer. The metal cap layer is disposed on the first metal layer. The DoD layer is disposed on the first low-k layer. The etch stop layer is disposed on the metal cap layer and the DoD layer. The second low-k layer is disposed above the etch stop layer. The metal via is embodied in the second low-k layer and connected to the first metal layer.

Abstract: A deep learning method of an artificial intelligence model for medical image recognition is provided. The method includes the following steps: obtaining a first image set, where the first image set includes at least two images captured with different parameters; performing image pre-processing on each image of the first image set to obtain a second image set; performing image augmentation on the second image set to obtain a third image set; adding the third image set to a training image data set; and training the artificial intelligence model using the training image data set.

Abstract: A sensing module includes a first coil, a control component coupled to the first coil, and a shielding component positioned at least on a first side of the first coil. The control component is configured to drive the first coil to transmit a first emitting electromagnetic signal, and to receive an induction signal generated from the first coil induced due to a first feedback electromagnetic signal. The shielding component shields at least a portion of the first emitting electromagnetic signal transmitting toward a first direction.

Abstract: A carbon emission calculation system and a carbon emission calculation method are provided. The carbon emission calculation system includes a computing equipment and a detection element. The detection element is coupled to the computing equipment and disposed in a mobile vehicle. When the detection element detects a user identity, the detection element outputs inbound data to the computing equipment, and the computing equipment starts to calculate usage information according to the inbound data. When the detection element detects the user identity again, the detection element outputs outbound data to the computing equipment, and the computing equipment finishes calculating the usage information according to the outbound data. The computing equipment calculates a personal carbon emission according to the inbound data, the outbound data, and the usage information.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a power rail; a bottom semiconductor layer formed over the dielectric layer; a backside spacer formed along a sidewall of the bottom semiconductor layer; a conductive feature contacting a sidewall of the dielectric layer and a sidewall of the backside spacer; channel semiconductor layers over the bottom semiconductor layer, wherein the channel semiconductor layers are stacked up and separated from each other; a metal gate structure wrapping each of the channel semiconductor layers; and an epitaxial source/drain (S/D) feature contacting a sidewall of each of the channel semiconductor layers, wherein the epitaxial S/D feature contacts the conductive feature, and the conductive feature contacts the power rail.

Abstract: A method for producing photocatalytic mortar includes providing a mortar-producing material including a fine aggregate and cement, a reactant mixture including a zinc source and urea, and a microorganism-containing mixture including water and a urease-producing microorganism, subjecting the microorganism-containing mixture and the reactant mixture to microbial induced precipitation in the mortar-producing material, subjecting zinc carbonate crystal-containing mortar produced to curing for the same to undergo hydration, and subjecting cured mortar to hydrothermal synthesis, so that zinc carbonate crystals therein are converted to nano zinc oxide crystals.

Abstract: A common-emitter amplifier with unilateral pre-embedding inductors includes: an input matching circuit, a first-stage amplification circuit, a first-stage interstage matching circuit, a second-stage amplification circuit, a second-stage interstage matching circuit, a third-stage amplification circuit, and an output matching circuit. The common-emitter amplifier is configured to: make an input signal sequentially enter bases of common-emitter transistors of the first-stage, second-stage, and third-stage amplification circuits, make the input signal be amplified stage by stage by the common-emitter transistors, and finally make an amplified input signal obtained by amplifying of each common-emitter transistor output through a collector of each common-emitter transistor. The common-emitter amplifier is configured to introduce interstage staggered tuning to expand bandwidth to address a narrowband problem.

Abstract: A semiconductor package includes a semiconductor die, an interposer disposed below the semiconductor die, first joints electrically coupling the semiconductor die to the interposer, at least one second joint coupling the semiconductor die to the interposer, and a first underfill disposed between the semiconductor die and the interposer to surround the active and second joints. The semiconductor die includes a first region, a seal ring region surrounding the first region, and a second region between the seal ring region and a die edge. The first joints are located within the first region, and the second joint is disposed at a die corner within the second region and is electrically floating in the semiconductor package.

Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

Abstract: In one embodiment, a method for controlling PCIe devices on an autonomous driving system (ADS) of an autonomous driving vehicle (ADV) is disclosed. The method includes scanning PCIe ports of the ADS to discover PCIe device(s) mounted on the ADS. Next, a comparison is performed between a list of the discovered PCIe device(s) and an expected list of PCIe devices for the ADS. Next, an offline PCIe device is determined based on the comparison, the offline PCIe device corresponding to a PCIe device that is present in the expected list of PCIe devices but not in the list of the discovered PCIe devices. Then a device reset command is transmitted to a programmable logic device that manages power for PCIe devices of the ADS to reset the offline PCIe device, wherein the programmable logic device generates a reset control signal for the offline PCIe device to reset the PCIe device.

Abstract: A method for filling a gap includes: filling a dielectric layer in the gap so that a seam is formed in the dielectric layer, the dielectric layer including two surface portions at two opposite sides of the seam, respectively; introducing a surface modification agent into the seam such that each of the two surface portions has first functional groups and second functional groups; forming a stress layer on the dielectric layer to cover the seam, the stress layer including a material different from that of the dielectric layer; and applying an energy field to permit the two surface portions to bond with each other through reaction between the first functional groups and the second functional groups.

Abstract: EUV masks and methods of fabrication thereof are described herein. An exemplary method includes receiving an EUV mask having a multilayer structure, a capping layer disposed over the multilayer structure, a patterned absorber layer disposed over the capping layer, and a patterned hard mask disposed over the patterned absorber layer. The method further includes removing the patterned hard mask by performing a first etching process to partially remove the patterned hard mask and performing a second etching process to remove a remainder of the patterned hard mask. The first etching process uses a first etchant, and the second etching process uses a second etchant. The second etchant is different than the first etchant. In some embodiments, the first etchant is a halogen-based plasma (e.g., a Cl2 plasma), and the second etchant is a halogen-and-oxygen-based plasma (e.g., a Cl2+O2 plasma).

Abstract: A semiconductor die and the method of forming the same are provided. The semiconductor die includes a first interconnect structure, a second interconnect structure including a conductive feature, and a device layer between the first interconnect structure and the second interconnect structure. The device layer includes a semiconductor fin, a first gate structure on the semiconductor fin, a source/drain region adjacent the first gate structure, and a shared contact extending through the semiconductor fin to be electrically connected to the source/drain region and the first gate structure. The conductive feature contacts the shared contact.

Abstract: The present disclosure discloses a preparation method for a transparent conductive polymer film, wherein the method comprises the following steps: (a) providing a precursor solution, wherein the precursor solution comprises a main solvent, an auxiliary solvent, an oxidizing agent and a thiophene monomer, wherein the auxiliary solvent comprises one or more of water, an aqueous solution containing hydrogen ions, a cyclic amide, a cyclic urea, a chain alkyl urea, phosphate or phosphoramide, and (b) coating the surface of a substrate with the precursor solution, so that the thiophene monomer is subjected to a polymerization reaction to form a conductive polymer film. The preparation method according to the present disclosure is economical, effective and simple, and the fabrication of high-quality transparent conductive polymer films by a one-step solution method has promising applications.

Abstract: The present disclosure provides for multi-specific antibodies and antigen-binding fragments thereof that bind to human MUC1 and CD16A, pharmaceutical compositions comprising said antibodies, and use of the antibodies or the compositions for treating a disease, such as cancer.

Abstract: An all-plastic pump comprising an outer cover, a plastic spring, an inner cover and a pressing head. The pump includes an accessory cavity in the outer cover, with a conveying hole. A tubular plastic spring is positioned within the cavity, surrounding the conveying hole. Supporting rods are arranged circumferentially on an inner wall of the plastic spring's port, with one end of the rods connected to a baffle. The inner cover surrounds the plastic spring, and a stop tube is inserted through the supporting rods, with its port sealing against the baffle. The pressing head, mounted in a pressable manner, includes a discharging hole, pressing sheet, and conveying tube. When pressed, the pressing sheet compresses the plastic spring, causing separation between the baffle and stop tube, allowing fluid discharge.