Patents by Inventor Yun-Jung Jee

Yun-Jung Jee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11043433
    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: June 22, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-yoon Ryu, Chung-sam Jun, Yu-sin Yang, Yun-jung Jee, Gil-woo Song
  • Publication number: 20200203232
    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 25, 2020
    Applicant: Samsung Electronics Co,, Ltd.
    Inventors: Sung-yoon RYU, Chung-sam Jun, Yu-sin Yang, Yun-jung Jee, Gil-woo Song
  • Patent number: 10593032
    Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: March 17, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Yoon Ryu, Joon-Seo Song, Yu-Sin Yang, Chung-Sam Jun, Yun-Jung Jee
  • Patent number: 10585115
    Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: March 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Duck Mahn Oh, Sung Yoon Ryu, Young Hoon Sohn, Chung Sam Jun, Yun Jung Jee
  • Patent number: 10527556
    Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: January 7, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min-Ho Rim, Jung-Soo Kim, Young-Hoon Sohn, Yu-Sin Yang, Chung-Sam Jun, Yun-Jung Jee
  • Publication number: 20190214316
    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.
    Type: Application
    Filed: March 15, 2019
    Publication date: July 11, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-yoon RYU, Chung-sam JUN, Yu-sin YANG, Yun-jung JEE, Gil-woo SONG
  • Publication number: 20190170788
    Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.
    Type: Application
    Filed: September 13, 2018
    Publication date: June 6, 2019
    Inventors: Duck Mahn Oh, Sung Yoon Ryu, Young Hoon Sohn, Chung Sam Jun, Yun Jung Jee
  • Patent number: 10281410
    Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: May 7, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Ho Rim, Yu Sin Yang, Chung Sam Jun, Yun Jung Jee
  • Patent number: 10249544
    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: April 2, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-yoon Ryu, Chung-sam Jun, Yu-sin Yang, Yun-jung Jee, Gil-woo Song
  • Publication number: 20180356349
    Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.
    Type: Application
    Filed: January 10, 2018
    Publication date: December 13, 2018
    Inventors: Min Ho Rim, YU SIN YANG, CHUNG SAM JUN, YUN JUNG JEE
  • Publication number: 20180340894
    Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.
    Type: Application
    Filed: October 27, 2017
    Publication date: November 29, 2018
    Inventors: Min-Ho RIM, Jung-Soo KIM, Young-Hoon SOHN, Yu-Sin YANG, Chung-Sam JUN, Yun-Jung JEE
  • Publication number: 20180106731
    Abstract: A semiconductor device inspecting apparatus includes a light source for emitting light to a semiconductor pattern. The semiconductor pattern includes a structure that reflects the light from the light source. The semiconductor device inspecting apparatus further includes an objective optical system disposed in a path of the reflected light from the semiconductor pattern, and a first noise filter disposed in a path of the reflected light having passed through the objective optical system, the first noise filter including at least one bar pattern that filters a diffraction noise of the light. The semiconductor device inspecting apparatus additionally includes a second noise filter disposed in a path of the filtered light from the first noise filter, the second noise filter including an outer frame surrounding a central portion. The semiconductor device inspecting apparatus further includes a first photodetector detecting the light having passed through the second noise filter.
    Type: Application
    Filed: August 9, 2017
    Publication date: April 19, 2018
    Inventors: MIN HO RIM, MYUNG SU OH, JUNG SOO KIM, YU SIN YANG, CHUNG SAM JUN, YUN JUNG JEE
  • Publication number: 20180061718
    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.
    Type: Application
    Filed: July 20, 2017
    Publication date: March 1, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-yoon RYU, Chung-sam JUN, Yu-sin YANG, Yun-jung JEE, Gil-woo SONG
  • Publication number: 20180053295
    Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.
    Type: Application
    Filed: January 27, 2017
    Publication date: February 22, 2018
    Inventors: Sung-Yoon Ryu, Joon-Seo Song, Yu-Sin Yang, Chung-Sam Jun, Yun-Jung Jee
  • Publication number: 20160261786
    Abstract: Provided is a wafer inspection apparatus using three-dimensional (3D) images, which apparatus may acquire a 3D image by adjusting a focal position at a high speed, and inspect a wafer by using the 3D image so that a 3D inspection operation may be precisely performed on patterns formed on the wafer at a high speed. The wafer inspection apparatus may include a stage on which a wafer is disposed, an optical apparatus configured to acquire an image of a pattern formed on the wafer by using a scan method, a focus adjusting unit configured to change a focal position of light irradiated to the wafer according to a scan speed of the optical apparatus, and an image processor configured to integrate images corresponding to focal positions and generate and analyze 3D images.
    Type: Application
    Filed: December 4, 2015
    Publication date: September 8, 2016
    Inventors: Jeong-ho Ahn, Yu-sin Yang, Yun-jung Jee, Woo-seok Ko
  • Publication number: 20100156446
    Abstract: A method of inspecting a substrate includes measuring a first current flowing between a first region and a second region of the substrate using a first probe. A second current flowing between the first region and the second region of the substrate may be measured using a second probe including a material different from that of the first probe. By comparing the first and second currents, it can be determined whether there is a change in a physical composition of the substrate and a change in a physical configuration of the substrate between the first region and the second region. Thus, when the current change is induced by the change in a physical configuration of the substrate, a determination error that the contaminants on the semiconductor substrate may exist based on the current change may be prevented.
    Type: Application
    Filed: December 18, 2009
    Publication date: June 24, 2010
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Chun-Yong KIM, Mi-Ra Park, Yun-Jung Jee, Chung-Sam Jun
  • Patent number: 7666069
    Abstract: The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: February 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Kyoung Kim, Yun-Jung Jee, Kyoung-Su Shin, Chung-Sam Jun
  • Patent number: 7428328
    Abstract: In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.
    Type: Grant
    Filed: July 12, 2005
    Date of Patent: September 23, 2008
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Yun-Jung Jee, Chung-Sam Jun, Yu-Sin Yang, Tae-Kyoung Kim
  • Patent number: 7310140
    Abstract: In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.
    Type: Grant
    Filed: June 25, 2004
    Date of Patent: December 18, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Min Eom, Yu-Sin Yang, Chung-Sam Jun, Yun-Jung Jee, Joung-Soo Kim, Moon-Kyung Kim, Sang-Mun Chon, Sun-Yong Choi
  • Publication number: 20070202615
    Abstract: In a method of measuring a critical dimension for conductive structures or openings exposing conductive structures formed on a substrate, a corona ion charge is deposited on the conductive structures and/or an insulating layer having the openings in a measurement region of the substrate. The critical dimension of the conductive structures or the openings may be determined by comparing variations of a surface voltage caused by leakage current through the conductive structures with reference data to thereby improve reliability of the critical dimension measurement.
    Type: Application
    Filed: February 6, 2007
    Publication date: August 30, 2007
    Inventors: Byung-Sug Lee, Mi-Sung Lee, Yu-Sin Yang, Yun-Jung Jee, Chung-Sam Jun