Abstract: An image sensor includes at least one photoelectric conversion device formed in a silicon substrate, at least one lens formed on one side of the photoelectric conversion device and configured to collect light, a dielectric layer formed on the other side of the photoelectric conversion device and a reflective pattern formed on the dielectric layer. The reflective pattern serves as an electrical circuit interconnection and is configured to reflect the light passing through the dielectric layer such that the light is absorbed to the silicon substrate again.

Abstract: Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.

Abstract: An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: Provided is an image sensor. The image sensor according to example embodiments may include a substrate having an effective pixel region and an ineffective pixel region adjacent to the effective pixel region. The substrate may also have a shading pattern over the ineffective pixel region of the substrate. The shading pattern includes one or more openings to allow hydrogen ions to pass therethrough but prevent incident light from penetrating to the ineffective pixel region.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: An image sensor includes a plurality of photoelectric conversion devices formed in a substrate and first and second color filters. The first color filter is formed over a first photoelectric conversion device and comprised of an organic material. The second color filter is formed over a second photoelectric conversion device and comprised of a plurality of inorganic layers. With such different types of color filters, spectral characteristic of the image sensor are enhanced.

Abstract: An image sensor includes a circuit substrate, a plurality of isolation regions, a plurality of photoelectric converters, and an insulation layer. The isolation regions are formed in a pixel region having the photoelectric converters formed therein with each photoelectric converter being electrically isolated by the isolation regions. The insulation layer is formed in a pad region with a substantially same depth as the isolation regions. The isolation region and the insulation layer are simultaneously formed for efficient fabrication of the image sensor.

Abstract: An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: An image sensor and a method of manufacturing the same are disclosed. An image sensor is formed by forming a photoelectric transformation element at a front surface of a semiconductor substrate in an active pixel sensor region and in an optical black region of the semiconductor substrate, subjecting a surface of the semiconductor substrate opposite the front surface to a removal process to create a back surface of the semiconductor substrate, and forming a light blocking film pattern on the back surface in the optical black region. The light blocking film pattern includes an organic material.

Abstract: One example embodiment may include an image sensor including a substrate, and a plurality of microlenses formed on the substrate. Each of the microlenses may include a base lens and a crosslinked overcoating film on a surface of the base lens.

Abstract: An image sensor may include a semiconductor substrate having unit pixel regions on the semiconductor substrate; photoelectric converters formed in the unit pixel regions; interlayer insulating films covering the photoelectric converters and having opening portions formed above the photoelectric converters; a light-transmissive portion filling the opening portions; color filters formed on the light-transmissive portion; and microlenses formed on the color filters. The microlenses may include a plurality of concentric circle patterns and a plurality of arc patterns arranged around the concentric circle patterns. An arc pattern around a specific concentric circle pattern may have a same center as the specific concentric circle pattern.

Abstract: An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.

Abstract: A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.