Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

Abstract: An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

Abstract: Provided is a catheter to be inserted into an object. The catheter includes a main body having a tubular shape and an expansion layer formed on an outer circumferential surface of the main body, and the expansion layer contains an expandable material which is expanded by contact with a liquid.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

Abstract: An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions.