Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

Abstract: The inventive concepts provide apparatuses for transferring a substrate and/or apparatuses for processing a substrate including the same. The substrate transferring apparatus including a chamber, a filter assembly disposed in a chamber to provide external air into the chamber, and an additional assembly including a moisture removing part and a purge gas providing part sequentially stacked on the filter assembly may be provided. The filter assembly may be coupled to the additional assembly.

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

Abstract: A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

Abstract: A substrate processing apparatus includes an electrostatic chuck which is made up of a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a first heater section in the dielectric plate between the chuck electrode and the base. The first heater section includes first heaters that are separated from each other in a first direction, and respective first upper plate electrodes disposed between the first heaters and the base. The first upper plate electrodes are separated from each other in the first direction and respectively connected to the first heaters.

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

Abstract: The inventive concepts provide apparatuses for transferring a substrate and/or apparatuses for processing a substrate including the same. The substrate transferring apparatus including a chamber, a filter assembly disposed in a chamber to provide external air into the chamber, and an additional assembly including a moisture removing part and a purge gas providing part sequentially stacked on the filter assembly may be provided. The filter assembly may be coupled to the additional assembly.

Abstract: An apparatus for monitoring vacuum ultraviolet, the apparatus including a light controller including a slit, the slit to transmit plasma emission light emitted from a process chamber in which a plasma process is performed on a substrate; a light selector adjacent to the light controller, the light selector selectively to transmit light, having a predetermined wavelength band, of the plasma emission light passing through the slit; a light collector to concentrate the light selectively transmitted by the light selector; and a detector to detect the light concentrated by the light collector, the light selectively transmitted by the light selector being vacuum ultraviolet.

Abstract: A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times.

Abstract: A substrate support unit of an etching process chamber includes a substrate support portion configured to support a substrate, a cathode under the substrate support portion, the cathode including an upper surface portion under the substrate support portion, the upper surface portion being smaller than a size of the substrate, and a step portion positioned a step downward from an edge portion of the upper surface portion, and a focus ring at an edge portion of the substrate, the focus ring being on the step portion and encompassing a side wall of the step portion and an edge portion of the substrate, the focus ring being configured to make a uniform distribution of an electric field on the substrate.

Abstract: An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.

Abstract: An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

Abstract: An ion neutralizer enhances a heat transfer rate between a reflecting plate and a frame while preventing the reflecting plate from being bent due to thermal deformation. The ion neutralizer includes a frame and a plurality of reflecting plates integrally formed with the frame to neutralize plasma ions. Each reflecting plate has a cantilever shape. Each reflecting plate has a supporting end in surface contact with the frame, and a free end to define a space with the frame in order to prevent the reflecting plate from being bent upon stretching due to thermal deformation.

Abstract: An apparatus to treat a substrate including a vacuum chamber having a plasma space where plasma is generated and a treating space where a substrate is treated, an extract electrode disposed between the plasma space and the treating space, a power supply to provide power to the extract electrode, and a controller to control the power supply so that a cation beam and a negative charge beam are alternately extracted from a plasma in the plasma space to the treating space.

Abstract: An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.