Abstract: A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

Abstract: A display apparatus including an electrically-controlled phase retardation layer, a reflective polarizer, a micro light emitting diode panel and a reflective layer is provided. The electrically-controlled phase retardation layer has a first side and a second side opposite to each other. The reflective polarizer is disposed at the first side of the electrically-controlled phase retardation layer. The micro light emitting diode panel is disposed at the second side of the electrically-controlled phase retardation layer and includes a circuit substrate and a plurality of micro light emitting diodes. The reflective layer is disposed between the reflective polarizer and the circuit substrate. An orthogonal projection of the reflective layer on the circuit substrate is not overlapped with orthogonal projections of the micro light emitting diodes on the circuit substrate.

Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.

Abstract: A method of fabricating a micro light emitting diode (LED) panel is provided. The method includes forming a semiconductor material substrate, forming a plurality of transistor devices, transferring and bonding the transistor devices onto a circuit substrate, and transferring a plurality of micro LED devices from a micro LED device substrate to the circuit substrate. The semiconductor material substrate includes a carrier, a release layer, an inorganic insulation layer, and a semiconductor material layer. The release layer is located between the carrier and the inorganic insulation layer. The semiconductor material layer is bonded to the release layer through the inorganic insulation layer. Electron mobility of the semiconductor material layer is greater than 20 cm2/V·s. The transistor devices are disposed on the release layer and are electrically connected to the circuit substrate. The micro LED devices are electrically connected to the transistor devices. A micro LED panel is also provided.

Abstract: A display apparatus including a reflective display panel and a micro light-emitting diode panel is provided. The display apparatus has a display surface and the reflective display panel has a reflective surface. The micro light-emitting diode panel is overlapped with the reflective display panel and includes a driving circuit layer and a plurality of light-emitting diode devices. The driving circuit layer is positioned between the reflective display panel and the display surface. The micro light-emitting diode devices are electrically bonded to the driving circuit layer. The display surface and the reflective surface are respectively disposed on two opposite sides of the micro light-emitting diode devices and the transmittance of the micro light-emitting diode panel within a wavelength range of visible light is higher than 50%.

Abstract: A display apparatus including a first display surface and a second display surface opposite to each other is provided. The display apparatus includes a reflective display panel and a micro light-emitting diode (LED) panel. The reflective display panel is provided with the first display surface and a visible light transmittance of the reflective display panel is higher than 30%. The micro LED panel is disposed overlapping with the reflective display panel and provided with the second display surface. The micro LED panel includes a drive circuit layer and a plurality of micro LED elements. The drive circuit layer is located between the reflective display panel and the second display surface. The micro LED elements are electrically bonded to the drive circuit layer. A visible light transmittance of the micro LED panel is higher than 50%.

Abstract: A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

Abstract: A method for manufacturing a wavelength converting film is provided. A release film is provided. At a least one coating process is performed to form at least one wavelength converting layer on the release film, wherein a first contact surface of the at least one wavelength converting layer and the release film has a first roughness. An adhesive layer is formed on a surface of the wavelength converting layer farthest from the release film, wherein a second contact surface of the adhesive layer and the wavelength converting layer has a second roughness. The second roughness is greater than the first roughness.

Abstract: A display device includes a display panel and at least one light modulation panel. The display panel includes a substrate and a plurality of micro light emitting semiconductors disposed on the substrate. The light modulation panel is disposed on a light emitting surface of the display panel and includes a light modulation unit. The light modulation panel is configured to change a transmittance of the light modulation unit according to a light modulation control signal.

Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed after the micro devices contact the receiving substrate. At least a portion of the micro devices are transferred from the carrier substrate onto the receiving substrate after changing the temperature of at least one of the carrier substrate and the receiving substrate.

Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.

Abstract: A light emitting diode display includes a plurality of display units and a plurality of auxiliary display units. The display units are arranged in an array and connected to each other. Each of the display units has a device arrangement region, a peripheral region surrounding the device arrangement region, and a plurality of first light emitting devices disposed on the device arrangement region and arranged in an array. The auxiliary display units are disposed on the peripheral regions of the display units. Each of the auxiliary display units includes an auxiliary substrate and a plurality of second light emitting devices arranged in an array. The second light emitting devices are disposed on the auxiliary substrate and located at a level different from a level of the first light emitting devices. Each of the auxiliary substrates is across adjacent two of the display units.

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a second type pad, and a current commanding structure. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer. The first type pad is electrically connected to the first type semiconductor layer. The second type pad is electrically connected to the second type semiconductor layer. The current commanding structure is disposed between the second type semiconductor layer and the second type pad. A contact resistance between the second type semiconductor layer and the current commanding structure is smaller than a contact resistance between the second type semiconductor layer and the second type pad. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than an orthogonal projection area of the second type pad on the second type semiconductor layer.

Abstract: A display including a back plate, a plurality of light emitting devices and a plurality of compensating light emitting devices is provided. The back plate has a plurality of pixels and at least one compensated region. The compensated region includes some of the pixels. The light emitting devices are arranged in all the pixels on the back plate. The compensated light emitting devices are disposed on the back plate and located in each pixel in the compensated region respectively. At least one of the pixels in the compensated region is dead pixel. Besides, a repair method of the display is also provided.

Abstract: A transfer substrate is configured to transfer a plurality of micro components from a first substrate to a second substrate. The transfer substrate comprises a base and a plurality of transfer heads. The base includes an upper surface. The plurality of transfer heads is disposed on the upper surface of the base, wherein each transfer head includes a first surface and a second surface opposite to each other and the transfer heads contact the base with the first surfaces thereof. A plurality of adhesion lumps is separated from each other, wherein each adhesion lump is disposed on the second surface of one of the transfer heads. A CTE of the base is different from CTEs of the transfer heads.

Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed, so that at least a portion of the micro devices are released from the carrier substrate and transferred onto the receiving substrate. A number of the at least a portion of the micro devices is between 1000 and 2000000.

Abstract: A ?LED chip having at least two light-emitting regions and including an epitaxial structure layer, a first-type electrode and at least two second-type electrodes is provided. The epitaxial structure layer includes a first-type semiconductor layer, at least two light-emitting layers and at least two second-type semiconductor layers. The light-emitting layers are respectively located in the light-emitting regions, one of the light-emitting layers has a first area, and the other light-emitting layer has a second area. A ratio of the first area to the second area is between 1.5 and 3, and a difference in current densities respectively passing through the at least two light-emitting regions is less than 10%. The light-emitting layers are located between the first-type semiconductor layer and the second-type semiconductor layers. The first-type electrode is electrically connected to the first-type semiconductor layer.

Abstract: A display including a back plate, a plurality of light emitting devices and a plurality of compensating light emitting devices is provided. The back plate has a plurality of pixels and at least one compensated region. The compensated region includes some of the pixels. The light emitting devices are arranged in all the pixels on the back plate. The compensated light emitting devices are disposed on the back plate and located in each pixel in the compensated region respectively. At least one of the pixels in the compensated region is dead pixel. Besides, a repair method of the display is also provided.