Abstract: A light emitting device of the invention includes a substrate, an electrode connection layer, and at least one epitaxial structure. The substrate has an upper surface and a plurality of electrode pads disposed on the upper surface. The electrode connection layer is disposed on the upper surface of the substrate and electrically connected to the plurality of electrode pads. The electrode connection layer has at least one first electrode, at least one second electrode and at least one connection layer disposed between the substrate and the at least one first electrode and disposed between the substrate and the at least one second electrode. The at least one connection layer has at least one buffer region exposed on the upper surface of the substrate and being an empty gap. The at least one epitaxial structure is disposed on and electrically connected to the electrode connection layer.

Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

Abstract: A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes. The electrode connection layer is disposed on the upper surface of the substrate and has at least one first electrode, at least one second electrode and a connection layer which has at least one buffer region. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pads are disposed on the lower surface of the substrate and connect with the conductive through holes.

Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

Abstract: A light emitting device includes an epitaxial structure and a sheet-shaped wavelength converting layer. The sheet-shaped wavelength converting layer is disposed on the epitaxial structure and at least includes a first wavelength converting unit layer and a second wavelength converting unit layer. The first wavelength converting unit layer is disposed between the second wavelength converting unit layer and the epitaxial structure. An emission peak wavelength of the first wavelength converting unit layer is greater than an emission peak wavelength of the second wavelength converting unit layer. A full width half magnitude of the second wavelength converting unit layer is greater than a full width half magnitude of the first wavelength converting unit layer.

Abstract: A semiconductor light-emitting device including at least one n-type semiconductor layer, at least one p-type semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is disposed between the at least one p-type semiconductor layer and the at least one n-type semiconductor layer. A ratio of carbon concentration to aluminum concentration in any one semiconductor layer containing aluminum in the semiconductor light-emitting device ranges from 10?4 to 10?2.

Abstract: A light emitting device includes a substrate, a conductive electrode connection layer, at least one epitaxial structure and an insulating layer. The substrate had an upper surface and a lower surface opposite to each other. The conductive electrode connection layer is disposed on the upper surface of the substrate and electrically connected with the substrate. The epitaxial structure is disposed on the conductive electrode connection layer and electrically connected with the conductive electrode connection layer, wherein the epitaxial structure has a first peripheral surface. The insulating layer is disposed between the conductive electrode connection layer and the least one epitaxial structure, wherein the insulating layer has a second peripheral surface, and the second peripheral surface is aligned with the first peripheral surface.

Abstract: A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes. The electrode connection layer is disposed on the upper surface of the substrate, and connects with the conductive through holes. An edge of the electrode connection layer is aligned with an edge of the substrate. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pads are disposed on the lower surface of the substrate and connect with the conductive through holes.

Abstract: An electrode structure of a light emitting device includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes electrically contact with the light emitting device and are separated from one other. The second electrodes electrically contact with the light emitting device and are located at the same side with the first electrodes. The second electrodes are separated from one other, and the second electrodes have at least two different profiles when viewing from atop.

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly.

Abstract: An epitaxy base adapted to form a light-emitting device on is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure disposed on a part of the substrate and protruding out from the substrate. A light-emitting device including the epitaxy base, a first type semiconductor layer, an emitting layer and a second type semiconductor layer is provided. The first type semiconductor layer is disposed on the substrate and the patterned wavelength conversion structure. The emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the emitting layer.

Abstract: A touch sensing display including a carrier, a plurality of light emitting devices arranged in an array on the carrier, a driving unit electrically connected to the light emitting devices and a processing unit electrically connected to the light emitting devices and the driving unit is provided. The driving unit is configured to control the light emitting devices, so as to make a first part of the light emitting devices emit a first light. A second part of the light emitting devices are configured to receive a second light which is related to an object, and the processing unit is configured to determine a location of the object touching or approaching the carrier according to the electrical changes generated by the light emitting devices, which sense the second light, of the second part.

Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.

Abstract: An optical module including a reflecting component, a plurality of first light sources and a wavelength conversion body is provided. The reflecting component has a main axis and a focal point located on the main axis. The first light sources are located at one side of the reflecting component and each of the first light sources emits a first light parallel to the main axis towards the reflecting component. The wavelength conversion body is disposed on the focal point, wherein the first lights are reflected to the focal point via the reflecting component and a part of the first lights are converted to a second light via the wavelength conversion body. The second light and another part of the first lights are projected to the reflecting component and form a light beam parallel to the main axis via reflection by the reflecting component.

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract: A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes. The electrode connection layer is disposed on the upper surface of the substrate and has at least one first electrode, at least one second electrode and a connection layer which has at least one buffer region. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pads are disposed on the lower surface of the substrate and connect with the conductive through holes.

Abstract: A method for manufacturing a wavelength converting film is provided. A release film is provided. At a least one coating process is performed to form at least one wavelength converting layer on the release film, wherein a first contact surface of the at least one wavelength converting layer and the release film has a first roughness. An adhesive layer is formed on a surface of the wavelength converting layer farthest from the release film, wherein a second contact surface of the adhesive layer and the wavelength converting layer has a second roughness. The second roughness is greater than the first roughness.

Abstract: An electrode structure of a light emitting device includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes electrically contact with the light emitting device and are separated from one other. The second electrodes electrically contact with the light emitting device and are located at the same side with the first electrodes. The second electrodes are separated from one other, and the second electrodes have at least two different profiles when viewing from atop.

Abstract: A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes. The electrode connection layer is disposed on the upper surface of the substrate, and connects with the conductive through holes. An edge of the electrode connection layer is aligned with an edge of the substrate. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pads are disposed on the lower surface of the substrate and connect with the conductive through holes.

Abstract: A method for manufacturing a light emitting device is provided. Step (a): A semiconductor wafer having a substrate and at least one epitaxial structure is provided. Step (b): An electrode connection layer is formed on the epitaxial structure, wherein the electrode connection layer includes connection pads, first electrodes and second electrodes. Step (c): A package substrate having the similar size as that of the semiconductor wafer and having conductive through holes is provided. Step (d): The semiconductor wafer and the package substrate are bonded by aligning the connection pads with the conductive through holes, so that the conductive through holes are electrically connected to a first type semiconductor layer or a second type semiconductor layer of the epitaxial structure. Step (e): The substrate is removed so as to expose a surface of the epitaxial structure and form a light emitting device.