Abstract: A color mirror substrate may include a transparent substrate, a plurality of wavelength conversion patterns arranged on the transparent substrate, and a plurality of mirror patterns, ones of the mirror patterns stacked on respective ones of the wavelength conversion patterns. Each wavelength conversion pattern may include a wavelength conversion particle with a quantum dot. In the color mirror display device, a mirror property having a desired color may be implemented. For example, a gold mirror or a black mirror may be implemented by using various types of quantum dots.

Abstract: An organic light emitting diode display includes: a substrate; an interlayer insulating layer on the substrate; driving source and drain electrodes on the interlayer insulating layer and facing each other; a planarizing layer on the interlayer insulating layer; a pixel electrode on the planarizing layer and including a reflective electrode; a pixel defining layer on an edge portion of the pixel electrode and the planarizing layer, and including an opening for exposing the pixel electrode and a reflective hole for exposing a part of the interlayer insulating layer; an organic emission layer on the pixel electrode within the opening; a common electrode on the organic emission layer and the pixel defining layer and within the reflective hole, and including a transparent electrode; and an optical sensor under the substrate, in which the reflective hole moves light emitted from the organic emission layer to the optical sensor under the substrate.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate including a display area in which an OLED is formed and a non-display area sunounding the display area. The OLED display also includes a pixel defining layer formed over the substrate and having an opening defining an emission area of the OLED, a first passivation layer covering a portion of the pixel defining layer formed in the non-display area and a second passivation layer formed in the non-display area, wherein a portion of the second passivation layer does not overlap the first passivation layer in the depth dimension of the OLED display. The OLED display further includes an encapsulation substrate formed to be opposite to the substrate and a filler filling a space between the substrate and the eportion capsulation substrate and contacting the first and second passivation layers.

Abstract: A mirror display device includes a first base substrate, a light emitting layer, a mirror layer, and a second base substrate. The light emitting layer is provided on the first base substrate. A mirror layer is provided on the light emitting layer and reflects a shape of an object. The second base substrate is provided on the mirror layer. The light emitting layer may have a circular shape in a plan view.

Abstract: A pixel and a display device including the same are disclosed. In one aspect, the pixel includes an organic light-emitting diode (OLED) and a reflection layer facing the OLED and configured to reflect light emitted from the OLED. The pixel also includes a photosensor configured to measure luminance of the reflected light. The photosensor is placed on a rear side of the OLED.

Abstract: A mirror substrate includes a transparent substrate, a plurality of mirror patterns on the transparent substrate, and a mirror layer extending continuously on the plurality of the mirror patterns and the transparent substrate. The mirror layer includes a first mirror layer on the transparent substrate and on the mirror patterns, and a second mirror layer on the first mirror layer. The first mirror layer includes silicon nitride, and the second mirror layer includes silicon oxide.

Abstract: A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

Abstract: A display device includes a reflecting layer. A display device according to an exemplary embodiment of the present invention includes: a lower substrate; an upper substrate facing the lower substrate; a thin film transistor on the lower substrate; and a first reflecting layer on a first surface of the upper substrate, the first surface facing the lower substrate, in which the lower substrate and the upper substrate include a display area for displaying an image, and a peripheral area outside the display area, and wherein the first reflecting layer is at the peripheral area, at display area, and at an area adjacent an edge of the upper substrate.

Abstract: A display device, including a first substrate and a second substrate facing each other and integrally attached to each other by a sealant; a display unit on one surface of the first substrate facing the second substrate; a reflective film on one surface of the second substrate facing the first substrate, the reflective film including a first region inside the sealant, a second region overlapping the sealant, and a third region outside the sealant; and a passivation layer covering at least the third region of the reflective film.

Abstract: An organic light-emitting diode display device includes a first substrate that includes a display region with a plurality of pixels and a non-display region in a periphery of the display region, a first electrode disposed on the first substrate, a second electrode opposed to the first electrode, an organic light-emitting layer disposed between the first electrode and the second electrode, and at least one light sensing member disposed on a rear surface of the first substrate that overlaps the display region.

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract: An organic light emitting diode display includes: a substrate including a display area displaying an image and a non-display area positioned around the display area; a first electrode formed in the display area connected with a thin film transistor; a pixel defining layer formed on the first electrode thereby defining a pixel area; an organic emission layer formed on the first electrode contacting the first electrode in the pixel area; a second electrode formed on the pixel defining layer contacting the organic emission layer; a passivation layer formed on the second electrode and the pixel defining layer; a filler covering the passivation layer in the display area; and a getter formed in the non-display area on the substrate and surrounding the display area, in which the passivation layer overlaps with the getter.

Abstract: An organic light emitting diode display includes: a substrate; a gate line on the substrate; a data line crossing the gate line; a driving voltage line extending parallel with at least one of the gate line and the data line; a first thin film transistor coupled to the gate line and the data line and comprising a first semiconductor layer; a second thin film transistor coupled to the first thin film transistor and the driving voltage line and comprising a second semiconductor layer; and an organic light emitting element coupled to the second thin film transistor, wherein at least one of the gate line, the data line, and the driving voltage line comprise a plurality of layers, and the lowest layer of the plurality of layers comprises a first metal layer made of a reflective metal.

Abstract: An organic light emitting diode display includes: a substrate; an interlayer insulating layer on the substrate; driving source and drain electrodes on the interlayer insulating layer and facing each other; a planarizing layer on the interlayer insulating layer; a pixel electrode on the planarizing layer and including a reflective electrode; a pixel defining layer on an edge portion of the pixel electrode and the planarizing layer, and including an opening for exposing the pixel electrode and a reflective hole for exposing a part of the interlayer insulating layer; an organic emission layer on the pixel electrode within the opening; a common electrode on the organic emission layer and the pixel defining layer and within the reflective hole, and including a transparent electrode; and an optical sensor under the substrate, in which the reflective hole moves light emitted from the organic emission layer to the optical sensor under the substrate.

Abstract: An organic light-emitting diode display and a method of manufacturing the same are disclosed. In one aspect, the display includes a substrate including a display area configured to display an image and a peripheral area surrounding the display area. The display also includes a thin film transistor formed in the display area over the substrate, a first planarization layer covering the TFT in the display area, and an OLED formed over the first planarization layer and electrically connected to the TFT. The display also includes a second planarization layer formed in the peripheral area, the second planarization layer including a plurality of out-gassing holes formed therein, and at least a portion of the second planarization layer thinner than the first planarization layer.

Abstract: A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

Abstract: A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.

Abstract: A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

Abstract: A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.