Patents by Inventor Yun Mo Chung

Yun Mo Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9070717
    Abstract: A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: June 30, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dong-Hyun Lee, Ki-Yong Lee, Jin-Wook Seo, Tae-Hoon Yang, Yun-Mo Chung, Byoung-Keon Park, Kil-Won Lee, Jong-Ryuk Park, Bo-Kyung Choi, Byung-Soo So
  • Patent number: 9034156
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Patent number: 9035311
    Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Tae-Hoon Yang, Jin-Wook Seo, Soo-Beom Jo, Dong-Hyun Lee, Kil-Won Lee, Maxim Lisachenko, Yun-Mo Chung, Bo-Kyung Choi, Jong-Ryuk Park, Ki-Yong Lee
  • Patent number: 9000440
    Abstract: There is provided a thin film transistor including an active layer on a substrate (the active layer including polysilicon and a metal catalyst dispersed in the polysilicon, a source area, a drain area, and a channel area), a gate electrode disposed on the channel area of the active layer, a source electrode electrically connected to the source area, and a drain electrode electrically connected to the drain area, wherein the gate electrode, the source area, and the drain area of the active layer include metal ions, the source area and the drain area are separate from each other, and the channel is disposed between the source area and the drain area.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: April 7, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Mo Chung, Jin-Wook Seo, Tak-Young Lee
  • Patent number: 8992749
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: March 31, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Patent number: 8987723
    Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: March 24, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jin-Wook Seo, Ki-Yong Lee, Yun-Mo Chung, Jong-Ryuk Park, Tak-Young Lee, Dong-Hyun Lee, Kil-Won Lee, Byung-Soo So, Yong-Duck Son, Seung-Kyu Park, Jae-Wan Jung, Min-Jae Jeong
  • Patent number: 8937313
    Abstract: A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the substrate, a first silicon oxide layer formed directly on the first silicon nitride layer and having a thickness of about 1000 ? or less, and a hydrogenated polycrystalline silicon layer formed directly on the first silicon oxide layer.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: January 20, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Mo Chung, Ki-Yong Lee, Jin-Wook Seo, Jong-Ryuk Park
  • Publication number: 20150001523
    Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.
    Type: Application
    Filed: September 19, 2014
    Publication date: January 1, 2015
    Inventors: Byoung-Keon PARK, Jong-Ryuk PARK, Yun-Mo CHUNG, Tak-Young LEE, Jin-Wook SEO, Ki-Yong LEE, Min-Jae JEONG, Yong-Duck SON, Byung-Soo SO, Seung-Kyu PARK, Dong-Hyun LEE, Kil-Won LEE, Jae-Wan Jung
  • Publication number: 20140363936
    Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.
    Type: Application
    Filed: June 12, 2014
    Publication date: December 11, 2014
    Inventors: Byoung-Keon Park, Tae-Hoon Yang, Jin-Wook Seo, Ki-Yong Lee, Maxim Lisachenko, Bo-Kyung Choi, Dae-Woo Lee, Kil-Won Lee, Dong-Hyun Lee, Jong-Ryuk Park, Ji-Su Ahn, Young-Dae Kim, Heung-Yeol Na, Min-Jae Jeong, Yun-Mo Chung, Jong-Won Hong, Eu-Gene Kang, Seok-RaK Chang, Jae-Wan Jung, Sang-Yon Yoon
  • Patent number: 8894768
    Abstract: A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: November 25, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Ki-Yong Lee, Jin-Wook Seo, Min-Jae Jeong, Jong-Won Hong, Heung-Yeol Na, Tae-Hoon Yang, Yun-Mo Chung, Eu-Gene Kang, Seok-Rak Chang, Dong-Hyun Lee, Kil-Won Lee, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Ivan Maidanchuk, Byung-Soo So, Jae-Wan Jung
  • Patent number: 8882976
    Abstract: A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: November 11, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Mo Chung, Min-Jae Jeong, Jong-Won Hong, Eu-Gene Kang, Heung-Yeol Na, Ki-Yong Lee
  • Publication number: 20140308445
    Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.
    Type: Application
    Filed: June 27, 2014
    Publication date: October 16, 2014
    Inventors: Heung-Yeol Na, Ki-Yong Lee, Jin-Wook Seo, Min-Jae Jeong, Jong-Won Hong, Eu-Gene Kang, Seok-Rak Chang, Tae-Hoon Yang, Yun-Mo Chung, Byung-Soo So, Byoung-Keon Park, Ivan Maidanchuk, Dong-Hyun Lee, Kii-Won Lee, Won-Bong Baek, Jong-Ryuk Park, Bo-Kyung Choi, Jae-Wan Jung
  • Patent number: 8841194
    Abstract: In one aspect, a method of forming a polysilicon (poly-Si) layer and a method of manufacturing a thin film transistor (TFT) using the poly-Si layer is provided. In one aspect, the method of forming a polysilicon (poly-Si) layer includes forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer for crystallization, on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: September 23, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Ryuk Park, Yun-Mo Chung, Tak-Young Lee, Kil-Won Lee
  • Patent number: 8841206
    Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: September 23, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Jong-Ryuk Park, Yun-Mo Chung, Tak-Young Lee, Jin-Wook Seo, Ki-Yong Lee, Min-Jae Jeong, Yong-Duck Son, Byung-Soo So, Seung-Kyu Park, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung
  • Patent number: 8771420
    Abstract: A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: July 8, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Heung-Yeol Na, Ki-Yong Lee, Jin-Wook Seo, Min-Jae Jeong, Jong-Won Hong, Eu-Gene Kang, Seok-Rak Chang, Yun-Mo Chung, Tae-Hoon Yang, Byung-Soo So, Byoung-Keon Park, Dong-Hyun Lee, Kil-Won Lee, Jong-Ryuk Park, Bo-Kyung Choi, Ivan Maidanchuk, Won-Bong Baek, Jae-Wan Jung
  • Patent number: 8653528
    Abstract: A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: February 18, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yong-Duck Son, Ki-Young Lee, Jin-Wook Seo, Min-Jae Jeong, Byung-Soo So, Seung-Kyu Park, Kii-Won Lee, Yun-Mo Chung, Byoung-Keon Park, Dong-Hyun Lee, Jong-Ryuk Park, Tak-Young Lee, Jae-Wan Jung
  • Publication number: 20140045305
    Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.
    Type: Application
    Filed: October 17, 2013
    Publication date: February 13, 2014
    Applicant: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon PARK, Jin-Wook Seo, Ki-Yong Lee, Yun-Mo Chung, Jong-Ryuk Park, Tak-Young Lee, Dong-Hyun Lee, Kil-Won Lee, Byung-Soo So, Yong-Duck Son, Seung-Kyu Park, Jae-Wan Jung, Min-Jae Jeong
  • Patent number: 8623746
    Abstract: A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: January 7, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Mo Chung, Ki-Yong Lee, Jin-Wook Seo, Kil-Won Lee, Bo-Kyung Choi
  • Publication number: 20130302535
    Abstract: A sputter device includes a cathode portion including a target support portion coupled to a front surface of a cathode main body, a target being mounted on the front surface of the cathode main body and being supported by the target support portion, an anode portion including an anode coupled to an anode main body, the anode main body surrounding a side and a bottom of the cathode portion, and the anode covering the target support portion and an edge of the target, an internal insulator between the cathode portion and the anode main body, an electrode insulator between the anode and each of the target support portion and the edge of the target, and a power source portion connected to the cathode portion and the anode portion.
    Type: Application
    Filed: November 28, 2012
    Publication date: November 14, 2013
    Inventors: Yun-Mo CHUNG, Jeong-Yeong JEONG, Jong-Ryuk PARK, Jin-Wook SEO
  • Patent number: 8580677
    Abstract: A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: November 12, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Mo Chung, Ki-Yong Lee, Jin-Wook Seo, Min-Jae Jeong, Yong-Duck Son, Byung-Soo So, Seung-Kyu Park, Byoung-Keon Park, Dong-Hyun Lee, Kil-Won Lee, Tak-Young Lee, Jong-Ryuk Park, Jae-Wan Jung