Patents by Inventor Yun-Wei Cheng

Yun-Wei Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MECHANISMS FOR FORMING IMAGE SENSOR DEVICE
    Publication number: 20210013255
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate and a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. The image sensor device further includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter. In addition, the image sensor device includes a reflective element between the shielding layer and an edge of the light sensing region.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 14, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Volume CHIEN, Yun-Wei CHENG, Shiu-Ko JANGJIAN, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG
  • IMAGE SENSOR
    Publication number: 20200411575
    Abstract: An image sensor includes a substrate, a photosensitive unit in the substrate, a dielectric grid over the substrate, and a color filter over the photosensitive unit and surrounded by the dielectric grid. The dielectric grid has a first portion and a second portion over the first portion, and the second portion of the dielectric grid has a rounded top surface extending upwards from a sidewall of the first portion of the dielectric grid. The color filter has a first portion lower than a lowermost portion of the rounded top surface of the second portion of the dielectric grid and a second portion higher than the lowermost portion of the rounded top surface of the second portion of the dielectric grid.
    Type: Application
    Filed: September 11, 2020
    Publication date: December 31, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Yin-Chieh HUANG, Wan-Chen HUANG, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG
  • Protection ring for image sensors
    Patent number: 10879290
    Abstract: Some embodiments relate to a device array including a plurality of devices arranged in a semiconductor substrate. A protection ring circumscribes an outer perimeter of the device array. The protection ring includes a first ring neighboring the device array, a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring circumscribing the second ring and meeting the second ring at a second p-n junction. The first ring has a first width, the second ring has a second width, and the third ring has a third width. At least two of the first width, the second width, and the third width are different from one another.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
  • Image sensor and method for fabricating the image sensor
    Patent number: 10872921
    Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsin-Chi Chen
  • Back Side Illuminated Image Sensor with Deep Trench Isolation Structures and Self-Aligned Color Filters
    Publication number: 20200395395
    Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 17, 2020
    Inventors: Kuo-Cheng Lee, Yun-Wei Cheng, Yung-Lung Hsu, Hsin-Chi Chen
  • Heat dissipation structures
    Patent number: 10854530
    Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: December 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Ying-Hao Chen
  • IMAGE SENSOR HAVING ISOLATION STRUCTURE
    Publication number: 20200343282
    Abstract: A device including a semiconductive substrate having opposite first and second surfaces, a light-sensitive element in the semiconductive substrate, an isolation structure extending at least from the second surface of the semiconductive substrate to within the semiconductive substrate, and a color filter over the second surface of the semiconductive substrate. The isolation structure includes a dielectric fill and a first high-k dielectric layer wrapping around the dielectric fill.
    Type: Application
    Filed: July 11, 2020
    Publication date: October 29, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Wei CHIA, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • HIGH DIELECTRIC CONSTANT DIELECTRIC LAYER FORMING METHOD, IMAGE SENSOR DEVICE, AND MANUFACTURING METHOD THEREOF
    Publication number: 20200343279
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Application
    Filed: July 8, 2020
    Publication date: October 29, 2020
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng, Hsin-Chieh Huang
  • Semiconductor device with a radiation sensing region and method for forming the same
    Patent number: 10818719
    Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: October 27, 2020
    Assignee: Taiwan Semicondutor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
  • Increased optical path for long wavelength light by grating structure
    Patent number: 10804307
    Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
    Type: Grant
    Filed: September 21, 2019
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee
  • POLARIZERS FOR IMAGE SENSOR DEVICES
    Publication number: 20200321379
    Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
    Type: Application
    Filed: June 22, 2020
    Publication date: October 8, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE
  • Mechanisms for forming image sensor device
    Patent number: 10797094
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Volume Chien, Yun-Wei Cheng, Shiu-Ko Jangjian, Zhe-Ju Liu, Kuo-Cheng Lee, Chi-Cherng Jeng
  • Image sensor and method for manufacturing thereof
    Patent number: 10777592
    Abstract: An image sensor includes a substrate, a photosensitive unit, a first grid and a color filter. The photosensitive unit is located within the substrate. The first grid is located above the substrate, and the first grid has a first portion and a second portion above the first portion, wherein the second portion has a rounded top surface extending from a sidewall of the first portion of the first grid. The color filter is located above the photosensitive unit and in contact with the rounded top surface of the second portion of the first grid.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Yin-Chieh Huang, Wan-Chen Huang, Zhe-Ju Liu, Kuo-Cheng Lee, Chi-Cherng Jeng
  • Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters
    Patent number: 10770501
    Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: September 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo-Cheng Lee, Yun-Wei Cheng, Yung-Lung Hsu, Hsin-Chi Chen
  • Semiconductor image sensor device having back side illuminated image sensors with embedded color filters
    Patent number: 10770502
    Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: September 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chiu-Jung Chen, Chun-Hao Chou, Hsin-Chi Chen, Kuo-Cheng Lee, Volume Chien, Yung-Lung Hsu, Yun-Wei Cheng
  • Light blocking layer for image sensor device
    Patent number: 10763289
    Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manuracturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee
  • IMAGE SENSOR WITH IMPROVED QUANTUM EFFICIENCY SURFACE STRUCTURE
    Publication number: 20200266232
    Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.
    Type: Application
    Filed: May 7, 2020
    Publication date: August 20, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
  • IMAGE SENSOR WITH IMPROVED QUANTUM EFFICIENCY SURFACE STRUCTURE
    Publication number: 20200266231
    Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
  • FORMATION METHOD OF LIGHT SENSING DEVICE
    Publication number: 20200266225
    Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.
    Type: Application
    Filed: May 6, 2020
    Publication date: August 20, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Yi-Hsing CHU, Yin-Chieh HUANG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG, Hsin-Chi CHEN
  • High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof
    Patent number: 10720460
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng, Hsin-Chieh Huang