Patents by Inventor Yun-Wei Cheng

Yun-Wei Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof
    Patent number: 10720460
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng, Hsin-Chieh Huang
  • Isolation structure and image sensor
    Patent number: 10714523
    Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: July 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Chun-Wei Chia, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang
  • Polarizers for image sensor devices
    Patent number: 10692911
    Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: June 23, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
    Publication number: 20200177830
    Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.
    Type: Application
    Filed: June 3, 2019
    Publication date: June 4, 2020
    Inventors: Yun-Wei Cheng, Chia Chun-Wei, Chun-Hao Chou, Kuo-Cheng Lee
  • Support Structure for Integrated Circuitry
    Publication number: 20200152684
    Abstract: Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.
    Type: Application
    Filed: January 14, 2020
    Publication date: May 14, 2020
    Inventors: Volume Chien, Yun-Wei Cheng, I-I Cheng, Shiu-Ko JangJian, Chi-Cherng Jeng, Chih-Mu Huang
  • IMAGE SENSOR WITH PAD STRUCTURE
    Publication number: 20200152687
    Abstract: The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG, Yin-Chieh HUANG
  • Structure and formation method of light sensing device
    Patent number: 10651217
    Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: May 12, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Yi-Hsing Chu, Yin-Chieh Huang, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Hsin-Chi Chen
  • Image sensor with high quantum efficiency surface structure
    Patent number: 10644060
    Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: May 5, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
  • METHOD FOR FORMING LIGHT-SENSING DEVICE
    Publication number: 20200135787
    Abstract: A method for forming a light-sensing device is provided. The method includes forming a light-sensing region in a semiconductor substrate. The semiconductor substrate has a front surface and a light-receiving surface opposite to the front surface. The method also includes forming a first dielectric layer over the front surface and forming a second dielectric layer over the first dielectric layer. The second dielectric layer has a different refractive index than that of the first dielectric layer, and the first dielectric layer and the second dielectric layer together form a (or a part of a) light-reflective element. The method further includes partially removing the first dielectric layer and the second dielectric layer to form a contact opening. In addition, the method includes forming a conductive contact to partially (or completely) fill the contact opening.
    Type: Application
    Filed: December 27, 2019
    Publication date: April 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • IMAGE SENSOR HAVING STRESS RELEASING STRUCTURE AND METHOD OF FORMING SAME
    Publication number: 20200135789
    Abstract: A semiconductor structure includes a sensor wafer comprising a plurality of sensor chips on and within a substrate. Each of the plurality of sensor chips includes a pixel array region, a bonding pad region, and a periphery region. The periphery region is between adjacent to a scribe line, and the scribe line is between adjacent sensor chips of the plurality of sensor chips. Each of the plurality of sensor chips further includes a stress-releasing trench structure embedded in the substrate, wherein the stress-releasing trench structure is in the periphery region, and the stress-releasing trench structure fully surrounds a perimeter of the pixel array region and the bonding pad region of a corresponding sensor chip of the plurality of sensor chips.
    Type: Application
    Filed: October 3, 2019
    Publication date: April 30, 2020
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Ying-Hao CHEN, Chun-Wei CHIA
  • High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof
    Patent number: 10636824
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: April 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng, Hsin-Chieh Huang
  • High Dielectric Constant Dielectric Layer Forming Method, Image Sensor Device, and Manufacturing Method Thereof
    Publication number: 20200127024
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng, Hsin-Chieh Huang
  • Semiconductor Device with a Radiation Sensing Region and Method for Forming the Same
    Publication number: 20200105805
    Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
    Type: Application
    Filed: December 3, 2019
    Publication date: April 2, 2020
    Inventors: Tsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
  • IMAGE SENSOR INCLUDING LIGHT SHIELDING LAYER AND PATTERNED DIELECTRIC LAYER
    Publication number: 20200106950
    Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Hsin-Chi Chen, Kuo-Cheng Lee, Hsun-Ying Huang
  • Image Sensor for Sensing LED Light with Reduced Flickering
    Publication number: 20200099846
    Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.
    Type: Application
    Filed: January 31, 2019
    Publication date: March 26, 2020
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsin-Chi Chen
  • PROTECTION RING FOR IMAGE SENSORS
    Publication number: 20200098799
    Abstract: Some embodiments relate to a device array including a plurality of devices arranged in a semiconductor substrate. A protection ring circumscribes an outer perimeter of the device array. The protection ring includes a first ring neighboring the device array, a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring circumscribing the second ring and meeting the second ring at a second p-n junction. The first ring has a first width, the second ring has a second width, and the third ring has a third width. At least two of the first width, the second width, and the third width are different from one another.
    Type: Application
    Filed: November 26, 2019
    Publication date: March 26, 2020
    Inventors: Tsung-Han Tsai, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
  • Semiconductor Image Sensor Device Having Back Side Illuminated Image Sensors with Embedded Color Filters
    Publication number: 20200091211
    Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
    Type: Application
    Filed: November 25, 2019
    Publication date: March 19, 2020
    Inventors: Chiu-Jung Chen, Chun-Hao Chou, Hsin-Chi Chen, Kuo-Cheng Lee, Volume Chien, Yung-Lung Hsu, Yun-Wei Cheng
  • METHOD FOR FABRICATING IMAGE SENSOR
    Publication number: 20200091207
    Abstract: A method includes depositing a first reflective layer over a substrate. A first dielectric layer is deposited over the first reflective layer. A second dielectric layer is deposited over the first dielectric layer. The second dielectric layer, the first dielectric layer, and the first reflective layer are etched to form a grid isolation structure that defines a recess. The recess is filled with a color filter.
    Type: Application
    Filed: November 18, 2019
    Publication date: March 19, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Yin-Chieh HUANG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • IMAGE SENSOR HAVING GRID ISOLATION STRUCTURE
    Publication number: 20200083264
    Abstract: An image sensor includes a substrate, a grid isolation structure, and a color filter. The substrate has a light-sensitive element therein. The grid isolation structure is above the substrate and includes a reflective layer, a first dielectric layer above the reflective layer, and a second dielectric layer above the first dielectric layer. The color filter is above the light-sensitive element and is surrounded by the grid isolation structure.
    Type: Application
    Filed: November 18, 2019
    Publication date: March 12, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Yin-Chieh HUANG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • IMAGE SENSOR AND METHOD FOR FABRICATING THE IMAGE SENSOR
    Publication number: 20200075661
    Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
    Type: Application
    Filed: August 30, 2018
    Publication date: March 5, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsin-Chi CHEN