Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: A video encoding apparatus includes a content activity analyzer circuit and a video encoder circuit. The content activity analyzer circuit applies a content activity analysis process to a plurality of frames, and generate a plurality of content activity analysis results, wherein the plurality of frames are derived from a plurality of input frames of the video encoding apparatus. The video encoder circuit performs a video encoding process to generate a bitstream output of the video encoding apparatus. At least one frame is not encoded into the bitstream output according to the plurality of content activity analysis results.

Abstract: Deferred neural lighting in augmented image generation includes performing operations. The operations include generating a source light representation of a real-world scene from a panoramic image of the real-world scene, augmenting the real-world scene in an object representation of the real-world scene to generate an augmented scene, and processing the augmented scene to generate augmented image buffers. The operations further include selecting a target lighting representation identifying a target light source, processing, by a neural deferred rendering model, the augmented image buffers, the source lighting representation, and a target lighting representation to generate an augmented image having a lighting appearance according to the target light source and outputting the augmented image.

Abstract: A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a gate structure formed over and around the nanostructures. The structure also includes a spacer layer formed over a sidewall of the gate structure over the nanostructures. The structure also includes a source/drain epitaxial structure formed adjacent to the spacer layer. The structure also includes a contact structure formed over the source/drain epitaxial structure with an air spacer formed between the spacer layer and the contact structure.

Abstract: The present invention discloses Fuke Qianjin Capsules and a quality control method therefor. The capsules are made of Radix et caulis flemingiae, Caulis mahoniae, Herba andrographis, Zanthoxylum dissitum Hemsl., Caulis spatholobi, Radix angelicae sinensis, Radix codonopsis, and Radix rosa laevigata as raw materials. Each of the Fuke Qianjin Capsules contains not less than 2.0 mg of Z-ligustilide, and a total amount of andrographolide and dehydroandrographolide is not less than 1.9 mg. A new standard for controlling quality of the Fuke Qianjin Capsules has been established through an analysis of chemical ingredients in the Fuke Qianjin Capsules. This standard adds a variety of core ingredient content to the existing pharmacopoeia standards. According to the Fuke Qianjin Capsules made in this range, the consistency of effects between different batches is more stable. Moreover, the more the types of core ingredients are limited, the more stable the consistency of the drug effect.

Abstract: A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

Abstract: A processor with an elliptic curve cryptographic algorithm and a data processing method thereof are shown. The processor has a first register storing a Hash value pointer, a second register storing a public key pointer, a third register storing a signature pointer, and a fourth register for storage of a verified result. In response to a first elliptic curve cryptographic instruction of an instruction set architecture, the processor reads the Hash value of the data by referring to the first register, obtains the public key by referring to the second register, obtains the digital signature to be verified by referring to the third register, performs a signature verification procedure using the elliptic curve cryptographic algorithm on the Hash value based on the public key and the digital signature to be verified to generate the verified result, and programs the verified result into the fourth register.

Abstract: A processor with an elliptic curve cryptographic algorithm and a data processing method thereof are shown. The processor has a first register, storing a private key pointer pointing to a private key. In response to a single elliptic curve cryptographic instruction of an instruction set architecture, the processor reads a ciphertext input from a first storage space within a system memory, performing a decryption procedure using the elliptic curve cryptographic algorithm on the ciphertext input based on the private key obtained by referring to the first register to decrypt the ciphertext input and generate a plaintext output, and programming the plaintext output into a second storage space within the system memory.

Abstract: A semiconductor device includes a source/drain component of a transistor. A source/drain contact is disposed over the source/drain component. A source/drain via is disposed over the source/drain contact. The source/drain via contains copper. A first liner at least partially surrounds the source/drain via. A second liner at least partially surrounds the first liner. The first liner and the second liner are disposed between the source/drain contact and the source/drain via. The first liner and the second liner have different material compositions.

Abstract: Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first fin structure and a second fin structure over a substrate, a first source/drain feature disposed over the first fin structure and a second source/drain feature disposed over the second fin structure, a dielectric feature disposed over the first source/drain feature, and a contact structure formed over the first source/drain feature and the second source/drain feature. The contact structure is electrically coupled to the second source/drain feature and is separated from the first source/drain feature by the dielectric feature.

Abstract: A multifunctional cooling and supporting apparatus for a tablet electronic device comprises a protective case including an upper cover and a lower cover assembled to the upper cover; a hollow space formed between the upper cover and the lower cover; the hollow space serving to accommodate the tablet electronic device; the upper cover having an upper opening; the protective case having a waterproof structure which seals the hollow space and prevents external liquid from penetrating the hollow space; and wherein the upper cover is installed with a heat conducting plate which closes and seals the upper opening of the upper cover; the heat conducting plate has a thermal conductive structure; an outer side of the heat conducting plate is exposed from the upper opening; an inner side of the heat conducting plate serves to contact a back end of the tablet electronic device.

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: Provided is an ultra-dispersion mixer, for stirring a mixed material for producing a high-quality slurry for an electrode of a secondary battery within a short time by disposing a low-speed blade and a high-speed blade for stirring a mixed material in a chamber so as to easily and effectively disperse elements of the slurry of a secondary battery, supplied to a mixer during a procedure of preparing the slurry of a secondary battery produced by performing mixing procedures multiple times, and disposing blade parts having a plurality of stirring characteristics so as to realize various stirring characteristics in the mixed material on the high-speed blade to increase the dispersion of the mixed material while the mixed material circulates in a high-shear disperser of the chamber and to simultaneously increase the temperature of a supplied solution at the beginning of stirring of the mixed material in the chamber.

Abstract: A method and structure for forming a semiconductor device includes etching back a source/drain contact to define a substrate topography including a trench disposed between adjacent hard mask layers. A contact etch stop layer (CESL) is deposited along sidewall and bottom surfaces of the trench, and over the adjacent hard mask layers, to provide the CESL having a snake-like pattern disposed over the substrate topography. A contact via opening is formed in a dielectric layer disposed over the CESL, where the contact via opening exposes a portion of the CESL within the trench. The portion of the CESL exposed by the contact via opening is etched to form an enlarged contact via opening and expose the etched back source/drain contact. A metal layer is deposited within the enlarged contact via opening to provide a contact via in contact with the exposed etched back source/drain contact.

Abstract: A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

Abstract: In an embodiment, a device includes: a semiconductor substrate; a first fin extending from the semiconductor substrate; a second fin extending from the semiconductor substrate; an epitaxial source/drain region including: a main layer in the first fin and the second fin, the main layer including a first semiconductor material, the main layer having an upper faceted surface and a lower faceted surface, the upper faceted surface and the lower faceted surface each being raised from respective surfaces of the first fin and the second fin; and a semiconductor contact etch stop layer (CESL) contacting the upper faceted surface and the lower faceted surface of the main layer, the semiconductor CESL including a second semiconductor material, the second semiconductor material being different from the first semiconductor material.

Abstract: A semiconductor device includes a substrate with a high voltage region and a low voltage region. A first deep trench isolation is disposed within the high voltage region. The first deep trench isolation includes a first deep trench and a first insulating layer filling the first deep trench. The first deep trench includes a first sidewall and a second sidewall facing the first sidewall. The first sidewall is formed by a first plane and a second plane. The edge of the first plane connects to the edge of the second plane. The slope of the first plane is different from the slope of the second plane.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: A semiconductor structure includes a metal gate structure including a gate dielectric layer and a gate electrode, a conductive layer disposed on the gate electrode, and a gate contact disposed on the conductive layer. The conductive layer extends from a position below a top surface of the metal gate structure to a position above the top surface of the metal gate structure. The gate electrode includes at least a first metal, and the conductive layer includes at least the first metal and a second metal different from the first metal. Laterally the conductive layer is fully between opposing sidewalls of the metal gate structure.