Abstract: Embodiments of the present application relate to polymers used as polymeric polyvalent hubs for liquid phase oligonucleotide synthesis. Methods for making an oligonucleotide by liquid phase oligonucleotide synthesis using the polymers are also provided.

Abstract: The present disclosure relates to an integrated chip including a substrate. A photodetector is arranged within the substrate. A trench isolation structure extends into the substrate on opposite sides of the photodetector. The trench isolation structure separates the photodetector from neighboring photodetectors. A first passivation layer is between a sidewall of the substrate and a sidewall of the trench isolation structure. The first passivation layer includes hydrogenated amorphous silicon.

Abstract: The present disclosure relates to image processing methods and apparatus. One example image processing method includes obtaining a face image, separately obtaining a left face image and a right face image based on the face image, inputting the left face image into a first target key point convolutional neural network model, outputting coordinates of a first left face key point, inputting the right face image into a second target key point convolutional neural network model, outputting coordinates of a first right face key point, and obtaining coordinates of a face key point of the face image based on the coordinates of the first left face key point and the coordinates of the first right face key point.

Abstract: A semiconductor structure includes a channel member, a gate structure disposed over the channel member, a source/drain feature connected to the channel member and adjacent to the gate structure, a source/drain contact disposed below and connected to the source/drain feature, a backside dielectric feature disposed below the channel member, and a first dielectric layer and a second dielectric layer disposed between the backside dielectric feature and the source/drain contact. The first dielectric layer includes a low-k dielectric material.

Abstract: A refrigerator for drinks may include a cabinet and a cooling guide transmitting coldness to a drink container stored in an erect state in the cabinet. Several coolers may be disposed for cooling guides and may cool the cooling guides, respectively, and dispenser nozzles may be disposed to be exposed outside the cabinet, whereby drinks may be dispensed. A surface of a cooling block facing a thermoelectric element of the cooler and a surface of the cooling block facing the cooling guide may have different areas.

Abstract: A display device is disclosed. The display device includes a plurality of display modules; a frame that is fastened to the plurality of display modules; a support member fastened to at least one of the frame or the plurality of display modules; and a heat sink fastened to the support member. The heat sink is configured to cover the cover shield and is at least partially in contact with the cover shield.

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottom surface of the gate structure is closer to the substrate than a bottom surface of the source/drain contact.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having an active region as the substrate includes a medium-voltage (MV) region and a low-voltage (LV) region, forming a first divot adjacent to one side of the active region, forming a second divot adjacent to another side of the active region, forming a first liner in the first divot and the second divot and on the substrate of the MV region and LV region, forming a second liner on the first liner, and then removing the second liner, the first liner, and the substrate on the LV region for forming a fin-shaped structure.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a gate structure disposed over a channel region of an active region, a drain feature disposed over a drain region of the active region; a source feature disposed over a source region of the active region, a backside source contact disposed under the source feature, an isolation feature disposed on and in contact with the source feature, a drain contact disposed over and electrically coupled to the drain feature, and a gate contact via disposed over and electrically coupled to the gate structure. A distance between the gate contact via and the drain contact is greater than a distance between the gate contact via and the isolation feature. The exemplary semiconductor structure would have a reduced parasitic capacitance and an enlarged leakage window.

Abstract: The present invention provides a method for preparing a swellable polymer to which an object is fixed. The preparation method of the present invention comprises a step of absorbing a solution of an object, which is dissolved or dispersed in a solvent with affinity for a swellable polymer, into a dried swellable polymer comprising a linker having a functional group that can bind to the object. Unlike a conventional preparation method in which an object is fixed before a swellable polymer is cross-linked, a method using a swellable polymer so as to fix an object after a polymer is cross-linked is used, and thus an object can be more rapidly fixed with efficiency higher than that of a conventional technique.

Abstract: One aspect of the present disclosure pertains to a method of forming a semiconductor device. The method includes forming a gate stack over a channel region and forming a first source/drain (S/D) trench adjacent the channel region and extending into the substrate below a top surface of an isolation structure. The method includes forming a first epitaxial S/D feature in the first S/D trench and forming a first frontside metal contact over the first epitaxial S/D feature. The method further includes forming a first backside trench that exposes a bottom surface of the first epitaxial S/D feature and forming a first backside conductive feature in the first backside trench and on the exposed bottom surface of the first epitaxial S/D feature. A top surface of the first backside conductive feature is under a bottommost surface of the gate stack.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

Abstract: A method includes providing a cartridge and the cartridge includes a slot for receiving a microfluidic chip having a set of first channels. The cartridge also includes a set of second channels and each channel of the set of second channels is coupleable to a different channel of the set of first channels during use with the microfluidic chip. The cartridge also includes an indent configured for engagement and alignment of the cartridge during use. The method also includes inserting the cartridge into a device, such that the cartridge engages a first biasing member of the device configured for alignment of the cartridge in a first direction. The first biasing member is configured to bias movement of the cartridge into locking position with a notch of the device.

Abstract: In a method for a target operation, a target virtual character is displayed in a game scene. The game scene includes a group of virtual objects and each virtual object in the group of virtual objects is available for the target virtual character to perform a target operation. A batch option is displayed when the target operation is selected by the target virtual character for a subset of the group of virtual objects and a number of the subset of the group of virtual objects is greater than or equal to a preset threshold. A batch target operation is performed based on a trigger operation on the batch option. The batch option is configured to perform the batch target operation on the group of virtual objects.

Abstract: Systems and methods of automatically extracting summaries of video content are described herein. A data processing system can access, from a video database, a first video content element including a first plurality of frame. The data processing system can select an intervallic subset of the first plurality of frames of the first video content element. The data processing system can calculate, for each of a plurality of further subsets comprising a predetermined number of frames from the intervallic subset, a score for the further subset. The data processing system can identify, from the plurality of further subsets, a further subset having a highest score. The data processing system can select a portion of the first video content element comprising the frames of the further subset having the highest score. The data processing system can generate a second video content element comprising the selected portion of the first video content element.

Abstract: A semiconductor structure includes semiconductor fins disposed over a substrate, an epitaxial source/drain (S/D) feature disposed over the semiconductor fins, where a top surface portion of the epitaxial S/D feature includes two surfaces slanted downward toward each other at an angle, a silicide layer disposed conformally over the top portion of the epitaxial S/D feature, and an S/D contact disposed over the silicide layer, where a bottom portion of the S/D contact extends into the epitaxial S/D feature.

Abstract: A method for high dynamic range imaging is provided. The method includes the following stages. A first image from a first sensor capable of sensing a first spectrum is received. A second image from a second sensor capable of sensing a second spectrum is received. The second spectrum has a higher wavelength range as compared to the first spectrum. A first image feature from the first image and a second image feature from the second image are retrieved. The first and second images are fused by referencing the first image feature and the second image feature to generate a final image.

Abstract: Embodiments of the present application provide a laser light source and a laser projection device. The laser light source includes a laser assembly and a light combination mirror assembly. The laser assembly includes at least a laser, a light emitting surface of the laser has a plurality of light emitting regions, and beams emitted from different ones of the plurality of light emitting regions are in different colors. The light combination mirror assembly includes a plurality of mirrors that are sequentially arranged along an optical transmission path of the laser, with each of the mirrors corresponding to one of the light emitting regions. The light combination mirror assembly is used to converge the beams in different colors emitted from the laser to form a white beam.