Abstract: A substrate includes a driving backplane, a plurality of first connecting lines and a plurality of second connecting lines. The driving backplane includes a base substrate, at least one first lead group and at least one second lead group. Each first lead group includes a plurality of first leads, and each second lead group includes a plurality of second leads. A first lead group and a corresponding second lead group is disposed in a peripheral region. The plurality of first connecting lines are disposed on at least one side face of the driving backplane, each first connecting line is electrically connected to at least one first lead. The plurality of second connecting lines are disposed on the at least one side face of the driving backplane, each second connecting line is electrically connected to at least one second lead, and is in contact with a corresponding first connecting line.

Abstract: An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: Embodiments of the present application relate to polymers used as polymeric polyvalent hub for liquid phase oligonucleotide synthesis. Methods for making an oligonucleotide by liquid phase oligonucleotide synthesis using the polyvalent hub are also provided.

Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.

Abstract: The present invention relates to the field of pharmaceutical and chemical engineering, and specifically relates to a weakly acidic microenvironment-sensitive aptamer for tumors, a triptolide conjugate. The conjugate is formed by conjugation between the 14-position hydroxyl group of triptolide and the aptamer via an acetal ester linking bond, which is an acid-sensitive linking bond with a cleavage condition of (pH=3.5-6.5), which is much less pH-sensitive and is more likely to cleave under the tumor microenvironment. Based on the characteristics of the aptamer targeting the highly expressed proteins on the membrane surface of tumor cells, the conjugate delivered triptolide targeted to tumor cells and mediated endocytosis to reach the lysosome; based on the characteristics of the acidic environment of lysosomes, the acetal ester linking bond released intact triptolide in the lysosomal acidic environment, targeting and killing of tumor cells.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A display device includes a substrate including a display area and a non-display area, the display area including pixels; data lines extending into the display area and connected to pixels; a first input pad in the non-display area and connected to the data lines; a switching transistor located in the non-display area between the first input pad and one side of the substrate and connected to the first input pad; and a second input pad in the non-display area and connected to a gate electrode of the switching transistor through a switching line.

Abstract: An electronic device protecting casing with heating function includes: a casing; a battery box within the casing; an interior of the battery box being arranged with a battery, a back side of the battery box being formed with an opening for receiving the battery; an outer cover serving to seal the opening; an inner side of the outer cover being formed with a heat isolation sheet; a heating unit being installed within the casing for heating the tablet computer; the heating unit including an electric heating plate. When power of the battery is transferred to the electric heating plate, the electric heating plate generates heat power and then transfers the power to the tablet computer for heating it; and a control circuit is installed within the casing; the electric heating plate is connected to the battery through a control switch; and the control circuit is connected to the control switch.

Abstract: Provided test method and apparatus of communication chip, device and medium. The test method of communication chip includes receiving end test method and transmitting end test method. The receiving end test method of the communication chip includes: an idle time slot of the receiving end of the communication chip is detected in a running process of the communication chip; a test vector is generated, and a standard result corresponding to the test vector is generated; a data frame containing the test vector is constructed, and the data frame is sent to the receiving end of the communication chip in the idle time slot to enable the receiving end of the communication chip to process the data frame; and a chip processing result uploaded by the receiving end of the communication chip is received, and the standard result is compared with the chip processing result.

Abstract: A multifunctional mixed oxide electrocatalyst material including a metal oxide A with oxygen storage capacity and a metal oxide B with oxygen evolution reaction is prepared by two-steps hydrothermal reactions. The electrocatalyst material is a good free radical scavenger, oxygen evolution reagent and able to alleviate carbon monoxide poisoning on catalyst, when it is applied in a membrane electrode assembly for fuel cells.

Abstract: A photographing lens assembly includes seven lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. The second lens element has positive refractive power. The seventh lens element has an image-side surface being concave in a paraxial region thereof, and the image-side surface of the seventh lens element has at least one convex shape in an off-axis region thereof.

Abstract: Examples of electronic devices are described herein. In some examples, an electronic device includes a camera to capture a composite image comprising multiple images of a location. In some examples, the electronic device includes a processor to crop a portion of the composite image based on a field-of-view of the camera. In some examples, the processor is to determine whether a neural network identifies the cropped portion. In some examples, the processor is to generate a unique identifier (ID) for the cropped portion in response to the cropped portion being unidentified by the neural network. In some examples, the processor is to associate the unique ID of the cropped portion with the location.

Abstract: An imaging lens assembly module includes an imaging lens element set, a lens carrier and a light blocking structure. The imaging lens element set has an optical axis. At least one lens element of the lens elements is disposed in the lens carrier. The light blocking structure includes a light blocking opening. The optical axis passes through the light blocking opening, and the light blocking opening includes at least two arc portions and a shrinking portion. Each of the arc portions has a first curvature radius for defining a maximum diameter of the light blocking opening. The shrinking portion is connected to the arc portions for forming the light blocking opening into a non-circular shape. The shrinking portion includes at least one protruding arc which extends and shrinks gradually from the shrinking portion to the optical axis, and the protruding arc has a second curvature radius.

Abstract: The present invention relates to an E. coli hisG-derived ATP-phosphoribosyltransferase variant having a reduced feedback inhibition by histidine and a strain expressing the same. The variant may maintain its activity even at a high histidine concentration, thus increasing histidine production.

Abstract: A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Abstract: A photographing optical lens assembly includes, in order from an object side to an image side along an optical axis, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element has positive refractive power. The second lens element has negative refractive power. The third lens element has an object-side surface being convex in a paraxial region thereof.