Abstract: A riding mowing device includes a seat used for a user to sit on and including a seat cushion and a backrest; a frame for supporting the seat; a cutting assembly including a cutting deck and a mowing element for mowing grass, where the mowing element is at least partially accommodated in the cutting deck, and the cutting assembly is mounted to the frame; a traveling assembly for driving the riding mowing device to travel; a control circuit board for controlling at least the cutting assembly and the traveling assembly; and a power supply assembly for supplying power to at least the cutting assembly and the traveling assembly. At least part of the control circuit board is disposed between the seat and the power supply assembly.

Abstract: An interaction control method includes: acquiring NFC device status information in response to triggering of near field communication NFC, where the NFC device status information includes status information of a master device and status information of a slave device; and providing an interactive function corresponding to the acquired NFC device status information according to a preset mapping relationship, and executing the interactive function in response to a trigger condition to realize information exchange between the master device and the slave device.

Abstract: A splicing adhesive film, a manufacturing method thereof, and a photovoltaic module are provided. The splicing adhesive film includes a first portion and a plurality of second portions. The first portion includes a first material, and each second portion includes a second material. The first portion is located in the central region, and the plurality of second portions each are at least partially located in the edge region. The first portion and each second portion are at least partially overlapped in the first direction. The maximum thickness of each second portion located in the edge region is P, and the maximum thickness of the first portion located in the central region is Q, P>Q.

Abstract: The present invention relates to the field of water surface treatment, and in particular to a cleaning ship for water surface treatment for harvesting water plants. In order to solve the technical problems that the existing cleaning ship cannot adapt to the waters of different depths for harvesting water plants, and a hull has low load utilization rate for the collected water plants and affects the overall working efficiency and the fuel economy of the hull, the present invention provides a cleaning ship for water surface treatment for harvesting water plants, comprising a steel belt conveying mechanism, a driven shaft and the like. The steel belt conveying mechanism drives the driven shaft to rotate.

Abstract: The present invention relates to the technical field of water surface waste treatment, and in particular to a water surface floater collecting ship. The technical problems are: picking up floaters with the cooperation of labors consumes manpower and causes disturbance of water surface, which makes the floaters float further away with water waves, and the odor emitted by the collected floating waste will pollute the environment and affect the salvage efficiency. The technical solution is: a water surface floater collecting ship, comprising a hull, a collecting system, etc.; the left part of the hull is connected with the collecting system used for collecting waste.

Abstract: The embodiments of the present disclosure relate to the field of display technology, and in particular to a display substrate, a display panel, and a display device. The display substrate includes a first electrode, a first wire, and a second wire; the first electrode is provided with a plurality of slits; the first wire is provided on a side of the first electrode, and a first gap is provided between the first wire and the first electrode, and the first wire being electrically connected to the first electrode; a second wire provided on a side of the first electrode away from the first wire, and a second gap being provided between the second wire and the first electrode; wherein each of the slits is provided with a first end and a second end opposed to each other, and the first end is close to the first wire, and the second end is close to the second wire, and a light-transmitting part of the first end is larger than a light-transmitting part of the second end.

Abstract: A detection apparatus includes a support, at least one driving apparatus provided on the support, and a first movable module. The at least one driving apparatus includes a first driving apparatus, and the first driving apparatus is connected to the first movable module. The first movable module is provided with a first sliding assembly, and a first camera connected to the first sliding assembly. The first driving apparatus is configured to control the first sliding assembly to move in a first direction to drive the first camera to move close to or away from a material to be photographed. An included angle between the first direction and a vertical direction is less than or equal to a preset angle threshold.

Abstract: An apparatus includes at least one vertical transistor having a channel region. The channel region includes an upper region having a first width and a lower region below the upper region and having a second width smaller than the first width. The upper region defines at least one overhang portion extending laterally beyond the lower region. The at least one vertical transistor further includes gate electrodes at least partially vertically beneath the at least one overhang portion of the upper region of the channel region. Additional apparatuses and related systems and methods are also disclosed.

Abstract: Some embodiments include an integrated assembly having a carrier-sink-structure, and having digit lines over the carrier-sink-structure. Transistor body regions are over the digit lines. Extensions extend from the carrier-sink-structure to the transistor body regions. The extensions are configured to drain excess carriers from the transistor body regions. Lower source/drain regions are between the transistor body regions and the digit lines, and are coupled with the digit lines. Upper source/drain regions are over the transistor body regions, and are coupled with storage elements. Gates are adjacent the transistor body regions. The transistor body regions, lower source/drain regions and upper source/drain regions are together comprised a plurality of transistors. The transistors and the storage elements are together comprised by a plurality of memory cells of a memory array. Some embodiments include methods of forming integrated assemblies.

Abstract: A battery pack for powering an outdoor moving includes: a housing mounted to the outdoor moving device and supported by the outdoor moving device; and a cell module mounted to the housing and including multiple cells. A cell is cylindrical and the diameter of the cell is greater than or equal to 3 cm.

Abstract: Redox catalysts having surface medication, methods of making redox catalysts with surface modification, and uses of the surface modified redox catalysts are provided. In some aspects, the redox catalysts include a core oxygen carrier region such as CaMnO3, BaMnO3-?, SrMnO3-?, Mn2SiO4, Mn2MgO4-?, La0.8Sr0.2O3-?, La0.8Sr0.2FeO3-?, Ca9Ti0.1Mn0.9O3-?, Pr6O11-?, manganese ore, or a combination thereof; and an outer shell having an average thickness of about 1-100 monolayers surrounding the outer surface of the core region. The outer shell can include, for example a salt selected such as Li2WO4, Na2WO4, K2WO4, SrWO4, Li2MoO4, Na2MoO4, K2MoO4, CsMoO4, Li2CO3, Na2CO3, K2CO3, or a combination thereof.

Abstract: Techniques are described for implementing a square-gate source-follower (SGSF) transistor for integration with complementary metal-oxide semiconductor (CMOS) image sensor (CIS) pixels. The SGSF transistor can have an active layer with active regions, including a drain region separated from each of two source regions to form parallel current channels. A square-gate structure layer includes main-gate regions, each disposed above a corresponding one of the current channels, and a side-gate region to couple the main-gate regions. At a particular physical width (W) and current channel length (L), the parallel current channels can act similarly to a conventional linear source-follower having dimensions of 2W and the same L. SGSF implementations can provide a number of features, including higher frame rate, lower power consumption, and lower noise, as compared to those of a conventional source-follower transistor of comparable W and L dimensions.

Abstract: Redox catalysts having surface medication, methods of making redox catalysts with surface modification, and uses of the surface modified redox catalysts are provided. In some aspects, the redox catalysts include a core oxygen carrier region such as CaMnO3, BaMnO3??, SrMnO3??, Mn2SiO4, Mn2MgO4??, La0.8Sr0.2O3??, La0.8Sr0.2FeO3??, Ca9Ti0.1Mn0.9O3??, Pr6O11??, manganese ore, or a combination thereof; and an outer shell having an average thickness of about 1-100 monolayers surrounding the outer surface of the core region. The outer shell can include, for example a salt selected such as Li2WO4, Na2WO4, K2WO4, SrWO4, Li2MoO4, Na2MoO4, K2MoO4, CsMoO4, Li2CO3, Na2CO3, K2CO3, or a combination thereof.

Abstract: Disclosed is an apparatus for testing blood coagulation indicators, including a blood sample receiving and preprocessing unit, and the blood preprocessing part is configured to remove or neutralize the anticoagulation effect of the artificially added anticoagulant in the blood sample; a reacting unit in which the blood undergoes a clotting process; a blood coagulation indicator analyzing and computing unit which may measure an electrical signal passing through the blood sample during the course of testing to obtain measurement results reflecting a time measurement function; and a result displaying unit. Further disclosed is a method for testing coagulation indicators of a blood sample using the apparatus.

Abstract: In one aspect, the disclosure relates to an oxygen-deficient mixed metal perovskite having the formula SrxA1-xFeyB1-yO3-?, wherein A can be Ca, K, Y, Ba, La, Sm, or any combination thereof; wherein B can be Co, Cu, Mn, Mg, Ni, Ti, or any combination thereof; wherein x is from 0 to 1; wherein y is from 0 to 1; and wherein ? is from 0 to 0.7. Also disclosed are redox catalysts comprising the oxygen-deficient mixed metal perovskites and methods for chemical looping air separation, chemical looping CO2 splitting, and chemical looping alkane conversion using the disclosed catalysts.

Abstract: An imaging pixel design is provide with a photo-sensor block structure that facilitates dynamic control of well capacity in the photodiode region (i.e., a “well capacity adjustment (WCA) gate photo-sensor block”). The photodiode region includes a doped well in which photocharge is accumulated responsive to exposure to incident illumination. The capacity of the well corresponds to a well potential. WCA structures (e.g., deep trench regions) form walls at least partially surrounding and capacitively coupling with the doped well, such that biasing of the WCA structures changes the well potential and the corresponding well capacity. As such, the WCA structures can be biased during integration to increase the well potential to a high level for large well capacity, and the WCA structures can be differently biased during photocharge transfer to decrease the well potential to a sufficiently low level that avoids lag and/or other conventional concerns.

Abstract: A trench-gate source-follower (TGSF) transistor is described, such as for integration with image sensor pixels. The TGSF transistor is at least partially built into a trench etched into a substrate. A contiguous doped region is implanted around the inner walls of the trench to form a buried-trench current channel. A trench-gate is formed to have at least a buried portion that fills the volume of the trench. A gate oxide layer can be disposed between the buried portion of the trench-gate and the buried-trench current channel. Drain and source regions are formed on either end of the trench-gate. Activating the trench-gate causes current to flow between the drain and source regions via the buried-trench current channel around the buried portion of the trench-gate. The geometry of the buried-trench current channel can effectively increase the width of the active region of the source-follower transistor without increasing its physical layout width.

Abstract: A hybrid ferroelectric-metal-oxide-semiconductor field effect transistor (Fe-MOSFET) device is described, such as for incorporation into in-pixel circuitry of an imaging pixel array to provide both reset and dual conversion gain features. The Fe-MOSFET includes source and drain regions implanted in a semiconductor substrate and separated by a channel region. The source region can be the floating diffusion region of a photosensor. A gate structure is deposited on the substrate directly above at least the channel region and an isolating layer is formed on the surface of the substrate to electrically isolate the gate structure from at least the channel region. The isolating layer is split into a Fe segment of ferroelectric material that can be written to different polarization states for conversion gain control, and a dielectric segment that can be used for current channel formation in the channel region.

Abstract: Some embodiments include an integrated assembly having an array of vertically-extending active regions. Each of the active regions is contained within a four-sided area. Conductive gate material is configured as first conductive structures. Each of the first conductive structures extends along a row of the array. The first conductive structures include segments along three of the four sides of each of the four-sided areas. Second conductive structures are under the active regions and extend along columns of the array. Third conductive structures extend along the rows of the array and are adjacent the fourth sides of the four-sided areas. Storage-elements are coupled with the active regions. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include an integrated assembly having digit lines which extend along a first direction, and which are spaced from one another by intervening regions. Each of the intervening regions has a first width along a cross-section. Pillars extend upwardly from the digit lines; and the pillars include transistor channel regions extending vertically between upper and lower source/drain regions. Storage elements are coupled with the upper source/drain regions. Wordlines extend along a second direction which crosses the first direction. The wordlines include gate regions adjacent the channel regions. Shield lines are within the intervening regions and extend along the first direction. The shield lines may be coupled with at least one reference voltage node. Some embodiments include methods of forming integrated assemblies.