Abstract: In some embodiments, the present disclosure relates to a method of forming a display device, comprising: forming a first reflector electrode and a second reflector electrode over an interconnect structure, wherein the first reflector electrode is laterally separated from the second reflector electrode; depositing a first isolation layer over the first and second reflector electrodes; forming a first masking layer directly overlying the first reflector electrode; depositing a second isolation layer over the first isolation layer and over the first masking layer; forming a second masking layer over the second isolation layer and directly overlying the second reflector electrode; performing a first removal process to remove portions of the first and second isolation layers that do not directly underlie the first or second masking layers; and performing a second removal process to remove the first and second masking layers.

Abstract: A temperature-measuring device for detecting moving object trajectories is provided. The temperature-measuring device includes a signal control module, a temperature-sensing module and a motion detection module. The temperature-sensing module is electrically connected to the signal control module, for measuring a temperature of each of a plurality of moving objects in an object temperature-measuring range. The motion detection module is electrically connected to the signal control module, for capturing a motion trajectory of each of the moving objects in an object motion detection range. The object temperature-measuring range is smaller than or equal to the object motion detection range, and the object temperature-measuring range falls entirely within the object motion detection range.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.

Abstract: A probe cover for an ear thermometer and a grouping method of the same are provided. The probe cover for the ear thermometer includes a conical main body having a closed end and an open end, an annular elastomer, and a flange. The closed end is penetrable by infrared rays, and has different infrared transmittances according to thickness variations of the closed end. The annular elastomer is located between the conical main body and the flange. The flange has a plurality of detection positions, each of which having a positive detection pattern or a negative detection pattern, such that the detection positions are arranged to form a plurality of different detection combinations. The different detection combinations respectively correspond to the different infrared transmittances, and any two of the different detection combinations have the two corresponding infrared transmittances that are different from one another.

Abstract: A temperature calibration method for an ear thermometer with a probe cover is provided. The temperature calibration method includes: providing the ear thermometer with the probe cover, the ear thermometer including a plurality of activation elements which are configured to sense an infrared transmittance of the probe cover to obtain a measured transmittance value; using the ear thermometer to measure an object to be tested to obtain an uncalibrated temperature; obtaining an infrared radiation energy emitted by the object to be tested, according to the uncalibrated temperature, the measured transmittance value, a preset transmittance value, and a radiation energy measurement formula; and calibrating the uncalibrated temperature to a calibrated temperature, according to a temperature calibration function.

Abstract: An ear thermometer capable of identifying an infrared transmittance of a probe cover is provided and includes an ear thermometer body, a probe, and a plurality of activation elements. The probe is disposed on the ear thermometer body. A closed end of the probe cover is used for infrared transmittance, and the probe cover has different infrared transmittances according to a thickness variation thereof. The activation elements are disposed on the ear thermometer body and configured to detect the infrared transmittance of the probe cover. Each of the activation elements includes an ON state and an OFF state so that the activation elements are arranged to form different sensor combinations, which respectively correspond to different infrared transmittances, and any two of the different sensor combinations have the two corresponding infrared transmittances that are different from one another.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip the method includes forming a waveguide on a first surface of a substrate. A conductive structure is formed at least partially overlying the waveguide. A light pipe structure is formed over the waveguide. A lower surface of the light pipe structure is disposed between a top surface and a bottom surface of the conductive structure. A lower portion of the light pipe structure contacts the conductive structure.

Abstract: Systems and methods are provided to implement power supply units (PSUs) that are capable of operating on input power having different types of input voltage waveforms, including, but not limited to, pure sinusoidal waveforms, non-pure sinusoidal waveforms, and non-sinusoidal waveforms. Such a PSU may operate to continue supplying DC output power to a system load as long as the PSU is powered by any one of a variety of such different input power types, while at the same time also effectively monitoring for presence of input power provided to the PSU and shutting down the PSU in event of absence or termination of the input power to the PSU. Such a PSU may also automatically identify and adapt to changes between different types of input power while at the same time continuing to supply DC output power to a system load in an uninterrupted manner for as long as some type of input power is being provided to the PSU.

Abstract: An image processing method includes: performing content analysis upon an input frame to generate at least one content analysis result of the input frame; determining, by a processing circuit, an anti-blue light strength level for the input frame according to content analysis result(s) of the input frame; and in response to the anti-blue light strength level determined for the input frame, performing color correction upon the input frame to generate an output frame.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a protective ring structure overlying a grating coupler structure. A waveguide structure is disposed within a semiconductor substrate and comprises the grating coupler structure. An interconnect structure overlies the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL) and a conductive contact over the semiconductor substrate. The conductive contact extends through the CESL. The protective ring structure extends through the CESL and has an upper surface aligned with an upper surface of the conductive contact.

Abstract: A temperature calibration method of an infrared thermal image camera and a calibration method of a temperature sensing system of an infrared thermal image camera are provided. The temperature calibration method of the infrared thermal image camera includes: providing a temperature sensing system to measure an object under test, so as to obtain an uncalibrated temperature; and calibrating the uncalibrated temperature to obtain a calibrated temperature, according to the uncalibrated temperature and a temperature calibration function. The temperature calibration function is obtained through a regression analysis.

Abstract: Systems and methods are provided to implement power supply units (PSUs) that are capable of operating on input power having different types of input voltage waveforms, including, but not limited to, pure sinusoidal waveforms, non-pure sinusoidal waveforms, and non-sinusoidal waveforms. Such a PSU may operate to continue supplying DC output power to a system load as long as the PSU is powered by any one of a variety of such different input power types, while at the same time also effectively monitoring for presence of input power provided to the PSU and shutting down the PSU in event of absence or termination of the input power to the PSU. Such a PSU may also automatically identify and adapt to changes between different types of input power while at the same time continuing to supply DC output power to a system load in an uninterrupted manner for as long as some type of input power is being provided to the PSU.

Abstract: In some embodiments, the present disclosure relates to a display device that includes a first reflector electrode and a second reflector electrode that is separated from the first reflector electrode. The display device further includes an isolation structure that overlies the first and second reflector electrodes. The isolation structure includes a first and second portion. The first portion overlies the first reflector electrode and has a first thickness. The second portion overlies the second reflector electrode, has a second thickness greater than the first thickness, and is separated from the first portion of the isolation structure. The display device also includes a first optical emitter structure and a second optical emitter structure that respectively overlie the first portion and the second portion of the isolation structure.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming an isolation structure over a reflector electrode and forming a protective layer over the isolation structure. Further, a first removal process is performed to form a first opening in the protective layer and the isolation structure to expose a first surface of the reflector electrode. A cleaning process is performed to clean the first surface of the reflector electrode. A conductive layer is formed over the protective layer and within the first opening. The conductive layer includes a different material than the protective layer. A second removal process is performed to remove peripheral portions of the protective layer and the conductive layer to form a via structure within the opening, extending through the isolation structure to contact the reflector electrode, and including the protective layer and the conductive layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a protective ring structure overlying a grating coupler structure. A waveguide structure is disposed within a semiconductor substrate and comprises the grating coupler structure. An interconnect structure overlies the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL) and a conductive contact over the semiconductor substrate. The conductive contact extends through the CESL. The protective ring structure extends through the CESL and has an upper surface aligned with an upper surface of the conductive contact.

Abstract: An embodiment is a method. The method includes: dispensing a plurality of precursor materials over a collective wafer platter holding a plurality of wafers; heating the collective wafer platter while dispensing the precursor materials; rotating the collective wafer platter around a first axis while dispensing the precursor materials and heating the collective wafer platter; rotating the wafers around respective second axes while dispensing the precursor materials and heating the collective wafer platter, the first axis different from each of the second axes; and singulating integrated circuit devices from each of the wafers.

Abstract: In some embodiments, the present disclosure relates to a display device that includes an isolation structure disposed over a reflector electrode, a transparent electrode disposed over the isolation structure, an optical emitter structure disposed over the transparent electrode, and a via structure. The via structure extends from the transparent electrode at a top surface of the isolation structure to a top surface of the reflector electrode. The via structure includes a center horizontal segment that contacts the top surface of the reflector electrode, a sidewall vertical segment that contacts an inner sidewall of the isolation structure, and an upper horizontal segment that is connected to the center horizontal segment by the sidewall vertical segment. The upper horizontal segment is thicker than the center horizontal segment.

Abstract: A method and a circuit for adaptive loop filtering in a video coding system are described. The method can include receiving a block of samples generated from a previous-stage filter circuit in a filter pipeline, the block of samples being one of multiple blocks included in a current picture, performing, in parallel, adaptive loop filter (ALF) processing for multiple target samples in the block of samples, while the previous-stage filter circuit is simultaneously processing another block in the current picture, storing, in a buffer, first samples each having a filter input area defined by a filter shape that includes at least one sample which has not been received, and storing, in the buffer, second samples included in the filter input areas of the first samples.