Abstract: An electronic device includes a board, a chip, a first conductive element and a second conductive element. The board has a first surface and a second surface opposite to the first surface. The board has a first through hole penetrating from the first surface to the second surface. The first conductive element is disposed between the board and the chip. The second conductive element has a first portion and a second portion connected to the first portion. The first conductive element is disposed between the first portion of the second conductive element and the board and overlaps with the first portion of the second conductive element. In a cross-sectional view of the electronic device, the second portion of the second conductive element directly contacts a side surface of the first conductive element and extends into the first through of the board.

Abstract: A resonant asymmetrical half-bridge flyback power converter includes: a first transistor and a second transistor switching a transformer coupled to a capacitor for generating an output power; a voltage divider coupled to an auxiliary winding of the transformer; a differential sensing circuit which includes a first terminal and a second terminal coupled to the voltage divider to sense an auxiliary signal generated by the auxiliary winding for generating a peak signal and a demagnetization-time signal; and a PWM control circuit configured to generate a first PWM signal and a second PWM signal in accordance with the peak signal and the demagnetization-time signal, for controlling the first transistor and the second transistor respectively; wherein a period of an enabling state of the demagnetization-time signal is correlated to the output power level; wherein the peak signal is related to a quasi-resonance of the transformer after the transformer is demagnetized.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. During a DCM (discontinuous conduction mode) operation, the second driving signal includes a resonant pulse for demagnetizing the transformer and a ZVS (zero voltage switching) pulse for achieving ZVS of the first transistor. The resonant pulse is skipped when the output voltage is lower than a low-voltage threshold.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.

Abstract: A method and apparatus for patterning semiconductor materials using tin-based materials as mandrels, hardmasks, and liner materials are provided. One or more implementations of the present disclosure use tin-oxide and/or tin-carbide materials as hardmask materials, mandrel materials, and/or liner material during various patterning applications. Tin-oxide or tin-carbide materials are easy to strip relative to other high selectivity materials like metal oxides (e.g., TiO2, ZrO2, HfO2, Al2O3) to avoid influencing critical dimensions and generate defects. In addition, tin-oxide and tin-carbide have low refractive index, k-value, and are transparent under 663-nm for lithography overlay.

Abstract: A conversion control circuit controls plural stackable sub-converters which are coupled in parallel to generate an output power to a load, the conversion control circuit includes: a current sharing terminal, wherein a current sharing signal is configured to be connected to the current sharing terminals, in parallel, of the plurality of the conversion control circuits; and a current sharing circuit, configured to generate or receive the current sharing signal which is generated according to an output current of the output power; wherein the conversion control circuit adjusts the power stage circuit according to the current sharing signal for current sharing among the plural stackable sub-converters.

Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A computer vision processing system is provided. The system includes one or more target devices and a processing unit. The target devices are configured to run the executable code of an image processing pipeline. The processing unit is configured to receive a series of application programming interface (API) calls and create a raw graph accordingly, redraw the raw graph into a compilable graph by sequentially processing each node, and compile the compilable graph into the executable code of the image processing pipeline. The series of API calls includes at least one tiling API call to set at least one of the nodes and at least one of the data objects as tileable. Each tileable node corresponds to multiple parallel processing nodes in multiple branches in the compilable graph, and each tileable data object corresponds to multiple tile data objects in the branches in the compilable graph.

Abstract: The present disclosure provides a radiation detector, including a substrate, a pixel array formed on the substrate, a perovskite thick film formed on the pixel array and having a cubic crystal phase, a first electrode formed on the perovskite thick film and is opposite to the pixel array, and a readout circuit. The radiation detector has significantly reduced dark current density and high sensing sensitivity. The present disclosure also provides a method for preparing the perovskite thick film.

Abstract: The present disclosure relates to an apparatus and a method for wafer cleaning. The apparatus can include a wafer holder configured to hold a wafer; a cleaning nozzle configured to dispense a cleaning fluid onto a first surface (e.g., front surface) of the wafer; and a cleaning brush configured to clean a second surface (e.g., back surface) of the wafer. Using the cleaning fluid, the cleaning brush can clean the second surface of the wafer with a scrubbing motion and ultrasonic vibration.

Abstract: An electronic device includes a casing, an antenna, and a connector. The casing includes a metal layer and a first slot and a second slot located on the metal layer. The metal layer includes a metal connecting segment, a first region, and a second region. The metal connecting segment is located between the first slot and the second slot, and the first region and the second region are separated by the first slot, the second slot, and the metal connecting segment. The antenna is connected to the first region, and the antenna is adapted to resonate at a frequency band. The connector is connected to the second region.

Abstract: An example wireless networking device (e.g., Access point) dynamically managing preamble puncturing for OFDM-based communications. The wireless networking device determines first criteria of a signal quality and further determines to allow preamble puncturing, wherein the signal quality of the determines the occupancy of a subchannel. Based on the determination to preamble puncture, apply dynamically, preamble puncturing to an adjacent subchannel. The wireless networking device further monitors the subchannel signal quality and determines based on a second criteria, an amount of bandwidth useable from an adjacent bandwidth. The wireless networking device, based on the second criteria, dynamically allocate bandwidth from the adjacent subchannel.

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor in the first region, a second transistor in the first region, and a third transistor in the second region. The first transistor includes a first channel layer and a first gate dielectric layer on the first channel layer. The second transistor includes a second channel layer and a second gate dielectric layer on the second channel layer. The second gate dielectric layer is thicker than the first gate dielectric layer. The third transistor includes a third channel layer and a third gate dielectric layer on the third channel layer. The third gate dielectric layer is thicker than the second gate dielectric layer.

Abstract: A multi-layer display module includes a first display panel, and a second display panel. Dimension of long side of the first display panel is D1, and the first display panel has first pixel resolution P1. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space d between the first display panel and the second display panel. Dimension of the long side of the second display panel is D2, and the second display panel has the second pixel resolution P2. Transmittance of the second display panel is T2. The multi-layer display module complies with T2>40%, P1?P2, and D ? 2 * T ? 2 ? d ? D ? 2 ? "\[LeftBracketingBar]" P ? 1 - P ? 2 ? "\[RightBracketingBar]" * P ? 2 .

Abstract: An electronic package is provided and includes a carrier for carrying electronic components. Electrical contact pads of the carrier for planting solder balls are connected with a plurality of columnar conductors, and the conductors are electrically connected to a circuit portion in the carrier. By connecting a plurality of conductors with a single electrical contact pad, structural stress can be distributed and breakage of the circuit portion can be prevented.

Abstract: A device for detecting a wearing status of a headphone includes a sensor, a player, an acoustic detection assembly and a microprocessor, where the acoustic detection assembly is connected to the player through a digital-to-analog converter, and the microprocessor is connected to the sensor and the acoustic detection assembly separately; the sensor is configured to determine, in combination with the microprocessor, a wearing status of the headphone within a period of time after current time in the case where the headphone is in a worn status at the current time; and the acoustic detection assembly is configured to determine, in combination with the microprocessor and the player, the wearing status of the headphone within the period of time after the current time in the case where the headphone is in a non-worn status at the current time.

Abstract: The present application discloses a crosstalk elimination method and a playback system for crosstalk elimination. The method includes steps: inputting a first test signal into a signal processor via an audio source input cable; detecting a first crosstalk signal generated by a second speaker and caused by a first test signal when the signal processor transmitting the first test signal to the first speaker; reversing the detected first crosstalk signal to a first reversed signal having equal volume and opposite phase, wherein when the signal processor transmits the first test signal to the first speaker again, the second speaker receives the first crosstalk signal and emits a first crosstalk sound, the first reversed signal is transmitted to the second speaker to emit a first reversed phase sound, and the first reversed phase sound eliminates the first crosstalk sound.

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises one or more semiconductor layers, a gate on the one or more semiconductor layers, a source/drain region including a first portion in the one or more semiconductor layers and a second portion in the one or more semiconductor layers, and a defect region in the one or more semiconductor layers. The defect region is disposed adjacent to the first portion of the source/drain region.

Abstract: The present invention provides a method for preparing an activated carbon, which includes impregnating a carbonaceous material with carbonated water; and exposing the carbonaceous material to microwave radiation to produce the activated carbon.