Abstract: In an embodiment, a device includes: a first wafer including a first substrate and a first interconnect structure, a sidewall of the first interconnect structure forming an obtuse angle with a sidewall of the first substrate; and a second wafer bonded to the first wafer, the second wafer including a second substrate and a second interconnect structure, the sidewall of the first substrate being laterally offset from a sidewall of the second substrate and a sidewall of the second interconnect structure.

Abstract: A homogeneous composite substrate includes a woven cloth and at least one fiber membrane. The woven cloth includes a plurality of first fibers. The fiber membrane is disposed on at least one surface of the woven cloth, and the fiber membrane includes a plurality of second fibers, in which a material of the first fibers and a material of the second fibers are the same, a fiber diameter of each first fiber is larger than or equal to 20 ?m and smaller than or equal to 130 ?m, and a fiber diameter of each second fiber is larger than or equal to 3 ?m and smaller than or equal to 10 ?m.

Abstract: A semiconductor manufacturing method is provided. The semiconductor manufacturing method includes the following steps. A first semiconductor element with a bonding film and a first stressing film is formed. The first bonding film and the first stressing film are formed on two opposite sides of the first semiconductor element. The first stressing film makes the first bonding film to have a first convex surface. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on one side of the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film.

Abstract: A semiconductor device and a semiconductor manufacturing method thereof are provided. The semiconductor manufacturing method includes the following streps. A first semiconductor element with a first bonding film is formed. The first bonding film is formed on a first side of the first semiconductor element. The first semiconductor element and the first bonding film form a taper structure. The first bonding film forms a wide portion of the taper structure. The first semiconductor element forms a narrow portion of the taper structure. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film. An oxide layer is filled to surround the first semiconductor element and the first bonding film.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: A separation apparatus suitable for separating plastic and silicone in a composite material includes a storage tank configured to store a hydrocarbon solvent, and a reaction tank fluidly connected to the storage tank and having a reaction space for placement of the composite material therein and for receiving the hydrocarbon solvent from the storage tank such that the composite material is immersed in the hydrocarbon solvent for separating the plastic and the silicone in the composite material. The plastic and the silicone in the composite material are insoluble in the hydrocarbon solvent.

Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending bet ween the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

Abstract: A wearable device and a method for performing a registration process in the wearable device are provided. The wearable device includes a light source, a light sensor and a microcontroller that performs the method. In the method, the light source is activated to emit a detection light and the light sensor senses a reflected light. A light intensity of the reflected light is calculated. Specifically, an upper limit and a lower limit are referred to for detecting whether the wearable device is properly worn by a person. For example, since the wearable device can be worn on the person's wrist, the registration value is used to detect whether the wearable device is away from the wrist.

Abstract: A rotation device includes a base seat, an axle unit and a restoring unit. The axle unit includes an upper axle that extends into the base seat. The restoring unit permits the upper axle to extend therein. The restoring unit is for restoring the upper axle to its original position after the upper axle is rotated.

Abstract: A rotation device includes a base seat, an axle unit, a lower rotating module and an upper rotating module. The axle unit includes an upper axle and a lower axle. The lower rotating module includes a lock unit, and an outer barrel that is disposed in the base seat and that is penetrated by the lower axle. The lock unit includes a lock plate that is sleeved on the lower axle, and a lock member that is mounted to the base seat. The lock plate is formed with a first lock groove. The lock member has a lock portion that is operable to move into the first lock groove. The upper rotating module is disposed in the base seat and is co-rotatably sleeved on the upper axle. The upper rotating module is able to be driven by the upper axle to rotate relative to the lower rotating module.

Abstract: A rotation device includes a base seat, an axle unit and a lock unit. The axle unit extends into the base seat. The lock unit includes a lock plate that is sleeved on the axle unit, and a lock member that is disposed on the base seat. The lock plate is formed with a first lock groove. The lock member has a lock portion that is operable to move into the first lock groove. The lock plate is locked by the lock portion of the lock member when the lock portion moves into the first lock groove, so that the axle unit and the lock plate are not rotatable relative to the base seat.

Abstract: This disclosure provides a machine tool adjustment method and system thereof. The machine tool adjustment method includes the following steps: enabling a machine tool to perform a circular test; obtaining a measured error value Em from a measuring instrument, and the measured error value Em is defined by the difference between the actual circular trajectory and the preset circular trajectory during the circular test; determining an error condition of the tool machine from the measured error value Em; determining whether the error condition is less than a predetermined criteria; if not, defining a compensation parameter according to the error condition and enabling the machine tool to perform another circular test according to the set compensation parameter until the error condition is less than the predetermined criteria; and if yes, ending the circular test and the machine tool adjustment is finished.

Abstract: This disclosure provides a machine tool adjustment method and system thereof. The machine tool adjustment method includes the following steps: enabling a machine tool to perform a circular test; obtaining a measured error value Em from a measuring instrument, and the measured error value Em is defined by the difference between the actual circular trajectory and the preset circular trajectory during the circular test; determining an error condition of the tool machine from the measured error value Em; determining whether the error condition is less than a predetermined criteria; if not, defining a compensation parameter according to the error condition and enabling the machine tool to perform another circular test according to the set compensation parameter until the error condition is less than the predetermined criteria; and if yes, ending the circular test and the machine tool adjustment is finished.

Abstract: A method for adjusting a frequency response parameter of a machine tool and a system using the same are provided. The method includes the following steps. Firstly, an actual frequency sweep is performed on the machine tool to acquire an original system closed loop data of the machine tool. Then, an original system open loop transfer function of the original system closed loop data is acquired. Then, a speed optimization procedure is executed to determine an optimized speed parameter. Then, a speed optimized open loop transfer function corresponding to a speed optimized close loop transfer function is acquired. Then, a filter transfer function of a filter is determined. Then, a filter optimization procedure is executed.

Abstract: A thermal compensation control system for a machine tool having a milling cutter and a cutter driver includes a tool setting probe, a temperature sensor, a workpiece touch probe, and a controller. The cutter driver is connected to the milling cutter to drive the milling cutter to process the work piece based on a control signal. The tool setting probe is configured to detect a cutter length of the milling cutter. The temperature sensor is configured to sense a measured temperature of the cutter driver or the milling cutter. The workpiece touch probe is configured to measure processing errors of the processed work piece. The controller is configured to generate the control signal based on a processing instruction, a temperature compensation model, the cutter length, and the measured temperature. The controller is further configured to determine whether to modify the temperature compensation model based on the processing errors.

Abstract: A thermal compensation control system for a machine tool having a milling cutter and a cutter driver includes a tool setting probe, a temperature sensor, a workpiece touch probe, and a controller. The cutter driver is connected to the milling cutter to drive the milling cutter to process the work piece based on a control signal. The tool setting probe is configured to detect a cutter length of the milling cutter. The temperature sensor is configured to sense a measured temperature of the cutter driver or the milling cutter. The workpiece touch probe is configured to measure processing errors of the processed work piece. The controller is configured to generate the control signal based on a processing instruction, a temperature compensation model, the cutter length, and the measured temperature. The controller is further configured to determine whether to modify the temperature compensation model based on the processing errors.

Abstract: An electronic device includes a first stream port and a control circuit. The first stream port includes a plurality of lanes, wherein the plurality of lanes are used to couple to a plurality of lanes of a second stream port of another electronic device, respectively. The control circuit is coupled to the first stream port, and is arranged for controlling a data transmission and data reception of the first stream port. When the lanes of the first stream port receive training sequences having a plurality of lane numbers from the lanes of the second stream port, respectively, to initiate a lane number negotiation, the lanes of the first stream port send back the received lane numbers to the second stream port, without considering default lane numbers of the lanes of the first stream port.