Abstract: An electronic package assembly is formed with a plurality of integrated circuit dies stacked in layers. At least one first die is placed on a substrate. Each subsequent layer of the stack contains at least one die. Each die on each layer has a size and shape such that, when placed on the dies on a lower layer, it is offset from the edges of the dies on the lower layer to allow affixing of wirebonds to input/output pads of the dies on the lower layer. Each die on each layer with more than one die has input/output pads placed on two sides of the die. Each die on an upper layer is placed orthogonally to each die of a lower each layer such that wirebonds are affixed without interference.

Abstract: A reciprocating or ping-pong voltage boosting circuit is described. The ping-pong boosting circuit has a first and a second boost circuit connected between the power supply voltage source and a ground reference point to generate a first instance and a second instance of a boost voltage. The reciprocating circuit has a switching circuit to alternately place the first and second instance of the boost voltage upon the signal line to bring the voltage level of the signal line to that of the boost voltage. A boost control circuit will provide a switching signal that will control the alternate placing of the first and second instances of the boost voltage upon the signal line. The boost control circuit will provide a boost signal that will cause the first and second boost circuits to generate the first and second instances of the boost voltage.

Abstract: The invention describes a technique in which the performance of a block write operations for SGRAM and VRAM are improved. The technique also produces improved noise margin along the data line when connecting to bit switches under mask during block write operation. The technique rearranges the physical location of each bit switch located along the data lines such that the worse case configuration is not clustered at the end of the data lines during a block write operation. This reduces the voltage drop along the data lines and provides more energy to switch bit lines or the corresponding memory columns. It also produces less drop on the bit lines as a result of doing a mask during the block write operation.

Abstract: Circuits and methods are disclosed for a row activation control logic for memory arrays. This invention utilizes a row activation control circuit and a NOR gate, in conjunction with a previously disclosed timing reference circuit, to allow the shortening of the row precharge time, yet insuring that the bitline is getting charged well enough without causing the chip to read wrong data at the next row activation. The circuits and methods disclosed can be applied to different types of dynamic random access memories.

Abstract: A high speed clock-positive edge detection circuit with chip select control that produces a glitch-free transition detection pulse is described. The circuit comprises Logic, Conditioning and Output Sections. An n-channel transistor is connected between output C, output B and the Chip Select input. This eliminates glitches that would otherwise be present, as in the prior art.

Abstract: A buffer memory system provides independent memory blocks, each with independent addressing and data paths, for a processor and input and output devices. The processor can configure the data paths so that an input device can initially supply data to a first memory block. The processor can then assign a second block for input and operate on the data in the first block. The processor can store the results of the process in a third block that has been assigned to an output device. The memory blocks and the associated data paths can paired for operating with a processor with a wider data bus.