Abstract: An integrated circuit includes an interconnection structure, first and second sensing pixels over the interconnection structure, and an isolation layer over the first and second sensing pixels. Each of the first and second sensing pixels includes a bio-sensing device, a temperature-sensing device, one or more heating elements adjacent to the bio-sensing device and the temperature-sensing device, and a sensing film over the bio-sensing device. The isolation layer includes a first opening configured to expose the sensing film of the first sensing pixel without exposing the sensing film of the second sensing pixel and a second opening configured to expose the sensing film of the second sensing pixel without exposing the sensing film of the first sensing pixel.

Abstract: A semiconductor device includes a hysteresis block configured to generate an output voltage at corresponding disabling enabling voltage levels and a core-voltage-gated (CVG) device configured to receive a core voltage, an input terminal of the hysteresis block is coupled to a control node. The CVG device is configured to alter a control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the disabling voltage level in response to the core voltage being at or below a first trigger level. Additionally, the CVG device is configured to alter the control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the enabling voltage level in response to the core voltage being at or above a second trigger level, the second trigger level being above the first trigger level.

Abstract: A device includes an electrical circuit having a first set of circuit elements. The device further includes a first set of conductive pillars over a first side of a substrate. The device further includes a first conductive rail electrically connected to each of the first set of conductive pillars, wherein each of the first set of conductive pillars is electrically connected to each of the first set of circuit elements by the first conductive rail. The device further includes a first plurality of power pillars extending through the substrate, wherein each of the first plurality of power pillars is electrically connected to the first conductive rail.

Abstract: Techniques for generating one or more non-final layouts for an analog integrated circuit are disclosed. The techniques include generating a non-final layout of an analog integrated circuit based on device specifications, partitioning the non-final layout into a plurality of sub-cells, merging the verified sub-cells to form a merged layout of the analog integrated circuit, and performing quality control checks on the merged layout. Additionally or alternatively, generating the non-final layout can include determining an allowable spacing between adjacent cells of different cell types or inserting one or more filler cells into a filler zone in the non-final layout.

Abstract: Circuits and methods for reducing and cancelling out kickback noise are disclosed. In one example, a circuit for a comparator is disclosed. The circuit includes: a first transistor group, a second transistor group, and a first switch. The first transistor group comprises a first transistor having a drain coupled to a first node, and a second transistor having a source coupled to the first node. Gates of the first transistor and the second transistor are coupled together to a first input of the comparator. The second transistor group comprises a third transistor having a drain coupled to a second node, and a fourth transistor having a source coupled to the second node. Gates of the third transistor and the fourth transistor are coupled together to a second input of the comparator. The first switch is connected to and between the first node and the second node.

Abstract: An integrated circuit includes a plurality of sensing pixels, each sensing pixel including a sensing film portion, a bio-sensing device configured to generate a first signal responsive to an electrical characteristic of the sensing film portion, a first switching device coupled between the bio-sensing device and a first signal path, a temperature-sensing device configured to generate a second signal responsive to a temperature of the sensing film portion, and a second switching device coupled between the temperature-sensing device and a second signal path.

Abstract: An integrated circuit structure includes a first capacitor structure, disposed in a first layer on a semiconductor substrate and comprising a plurality of capacitors; a second capacitor structure, adjacent to first capacitor structure in the first layer, wherein the second capacitor structure and the first capacitor structure are arranged as a. strip-shaped structure; a first conductive plate, disposed at one end of the strip-shaped structure in the first layer; and a second conductive plate, disposed in a second layer on the semiconductor substrate over the strip-shaped structure and extending toward the other end of the strip-shaped structure from the one end of the strip-shaped structure.

Abstract: Various techniques are disclosed for automatically generating sub-cells for a non-final layout of an analog integrated circuit. Device specifications and partition information for the analog integrated circuit is received. Based on the device specifications and the partition information, first cut locations for a first set of cuts to be made along a first direction of a non-final layout of the analog integrated circuit and second cut locations for a second set of cuts to be made along a second direction in the non-final layout are determined. The first set of cuts are made in the non-final layout at the cut locations to produce a temporary layout. The second set of cuts are made in the temporary layout at the cut locations to produce a plurality of sub-cells.

Abstract: In a compute-in-memory (“CIM”) system, current signals, indicative of the result of a multiply-and-accumulate operation, from a CIM memory circuit are computed by comparing them with reference currents, which are generated by a current digital-to-analog converter (“DAC”) circuit. The memory circuit can include non-volatile memory (“NVM”) elements, which can be multi-level or two-level NVM elements. The characteristic sizes of the memory elements can be binary weighted to correspond to the respective place values in a multi-bit weight and/or a multi-bit input signal. Alternatively, NVM elements of equal size can be used to drive transistors of binary weighted sizes. The current comparison operation can be carried out at higher speeds than voltage computation. In some embodiments, simple clock-gated switches are used to produce even currents in the current summing branches. The clock-gated switches also serve to limit the time the cell currents are on, thereby reducing static power consumption.

Abstract: A semiconductor device includes an electrical circuit having a first set of circuit elements, wherein the electrical circuit is in a circuit area on a first side of a substrate, and a first set of conductive pillars over the first side of the substrate. In the semiconductor device, a first conductive rail electrically connects to each of the first set of conductive pillars, wherein each of the first set of conductive pillars is electrically connected to each of the first set of circuit elements by the first conductive rail; and a first power cell extending through the substrate, wherein the first power cell includes a first number of power pillars extending through the substrate, wherein each of the first number of power pillars electrically connects to the first conductive rail in parallel.

Abstract: A method of generating a layout design of an integrated circuit includes forming an active zone and partitioning the active zone into a center portion between a first side portion and a second side portion. The method also includes forming a plurality of gate-strips and forming a routing line. The plurality of gate-strips includes a first group of gate-strips intersecting the active zone over first channel regions in the center portion, a second group of gate-strips intersecting the active zone over second channel regions in the center portion, a third group of gate-strips intersecting the active zone over third channel regions in the first side portion, and a fourth group of gate-strips intersecting the active zone over fourth channel regions in the second side portion.

Abstract: A semiconductor device includes an active region over a substrate extending along a first lateral direction. The semiconductor device includes a number of first conductive structures operatively coupled to the active region. The first conductive structures extend along a second lateral direction. The semiconductor device includes a number of second conductive structures disposed above the plurality of first conductive structures. The second conductive structures extend along the first lateral direction. The semiconductor device includes a first capacitor having a first electrode and a second electrode. The first electrode includes one of the first conductive structures and the active region, and the second electrode includes a first one of the second conductive structures. Each of the active region and the first conductive structures is electrically coupled to a power rail structure configured to carry a supply voltage.

Abstract: Circuits and methods for reducing and cancelling out kickback noise are disclosed. In one example, a circuit for a comparator is disclosed. The circuit includes: a first transistor group, a second transistor group, and a first switch. The first transistor group comprises a first transistor having a drain coupled to a first node, and a second transistor having a source coupled to the first node. Gates of the first transistor and the second transistor are coupled together to a first input of the comparator. The second transistor group comprises a third transistor having a drain coupled to a second node, and a fourth transistor having a source coupled to the second node. Gates of the third transistor and the fourth transistor are coupled together to a second input of the comparator. The first switch is connected to and between the first node and the second node.

Abstract: An integrated circuit includes a first circuit with m first units coupled in parallel, any of the first units including one or more first transistors coupled in series, and a second circuit with n second units coupled in parallel, any of the second units including one or more second transistors coupled in series. A gate terminal of the first circuit is coupled to a gate terminal of the second circuit. M and n are different positive integers.

Abstract: A method is disclosed including: generating, based on design information for an integrated circuit, a circuit design that includes an initial power delivery network (PDN) for the integrated circuit; performing a pre-layout simulation to the circuit design that includes the initial power delivery network, to determine whether the circuit design meets a predetermined specification; generating a circuit layout of the integrated circuit when the circuit design meets the predetermined specification; and adding at least one additional conductive pillar or at least one additional power rail in the initial power delivery network according to a relationship of a pillar density of the initial power delivery network and a maximum pillar density when the circuit design does not meet the predetermined specification.

Abstract: An integrated circuit structure includes a first conductive plate, a second conductive plate, a plurality of conductive lines, and a plurality of conductive vias. The first conductive plate is disposed in a first layer on a semiconductor substrate. The second conductive plate is disposed in a second layer on the semiconductor substrate. The plurality of conductive lines are disposed in the first layer for surrounding the first conductive plate. The plurality of conductive vias are arranged to couple the plurality of conductive lines to the second conductive plate. The second layer is different from the first layer, and the first conductive plate is physically separated from the second conductive plate, the plurality of conductive lines, and the plurality of conductive vias.

Abstract: A low power comparator and a self-regulated device for adjusting power saving level of an electronic device are provided. The low power comparator includes an input differential pair circuit, a self-regulated device, and a tail current switch. The input differential pair circuit is configured to receive input signals to be compared. The self-regulated device is coupled to the input differential pair circuit and includes a self-regulated circuit which has a first transistor with a first threshold voltage and a second transistor with a second threshold voltage and is configured to adjust a power saving level of the low-power comparator according to the first threshold voltage and the second threshold voltage. The tail current switch is coupled to the input differential pair circuit through the self-regulated circuit to provide a constant current to the input differential pair circuit.

Abstract: Disclosed herein are related to a system and a method of amplifying an input voltage based on cascaded charge pump boosting. In one aspect, first electrical charges are stored at a first capacitor according to the input voltage to obtain a second voltage. In one aspect, the second voltage is amplified according to the first electrical charges stored by the first capacitor to obtain a third voltage. In one aspect, second electrical charges are stored at the second capacitor according to the third voltage. In one aspect, the third voltage is amplified according to the second electrical charges stored by the second capacitor to obtain a fourth voltage.

Abstract: A semiconductor device includes an electrical circuit having a first set of circuit elements, wherein the electrical circuit is in a circuit area on a first side of a substrate, and a first set of conductive pillars over the first side of the substrate. In the semiconductor device, a first conductive rail electrically connects to each of the first set of conductive pillars, wherein each of the first set of conductive pillars is electrically connected to each of the first set of circuit elements by the first conductive rail; and a first power cell extending through the substrate, wherein the first power cell includes a first number of power pillars extending through the substrate, wherein each of the first number of power pillars electrically connects to the first conductive rail in parallel.

Abstract: A semiconductor device includes transistors and a resistor. The transistors are connected in series between a power terminal and a ground terminal, and gate terminals of the transistors being connected together. The resistor is overlaid above the transistors. The resistor is connected between a source terminal of the transistors and the ground terminal.