Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: A memory chip, a memory device and an operation method are disclosed. The memory chip includes a number of memory units and a control logic circuit. The memory units could be configured as TLC, MLC or SLC. The control logic circuit is configured to use TLC programming approach to program MLC and SLC.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: A memory device for CIM, applicable to a 3D AND-type flash memory, includes a memory array, input word line pairs, and a signal processing circuit. The memory array includes first and second pairs of memory cells. Each first pair of memory cells includes a first memory cell set coupled to a first GBL and a second memory cell set coupled to a second GBL. Each second pair of memory cells includes a third memory cell set coupled to the first GBL and a fourth memory cell set coupled to the second GBL. Each input word line pair includes a first input word line coupled to the first and the second memory cell sets, and a second input word line coupled to the third and the fourth memory cell sets s. The signal processing circuit is coupled to the first and second global bit lines.

Abstract: A memory chip, a memory device and an operation method are disclosed. The memory chip includes a number of memory units and a control logic circuit. The memory units could be configured as TLC, MLC or SLC. The control logic circuit is configured to use TLC programming approach to program MLC and SLC.

Abstract: The application provides a content addressable memory (CAM) memory device and a method for searching and comparing data thereof. The CAM memory device comprises: a plurality of CAM memory strings; and a sensing amplifier circuit coupled to the CAM memory strings; wherein in data searching, a search data is compared with a storage data stored in the CAM memory strings, the CAM memory strings generate a plurality of memory string currents, the sensing amplifier circuit senses the memory string currents to generate a plurality of sensing results: based on the sensing results, a match degree between the search data and the storage data is determined as one of the follows: all-matched, partially-matched and all-mismatched.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. Each vector data is executed with a multiplying-operation, the MSB vector and the LSB vector of each vector data is executed with a first group-counting operation and a second group-counting operation respectively. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, the effective bit number stored by each memory unit is less than 2.

Abstract: Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems are provided. In one aspect, a memory system includes a memory storing data and a memory controller coupled to the memory. The memory controller is configured to: obtain a first reading output of target memory data in the memory using a first read voltage, and in response to determining that the first reading output fails to pass an Error-Correcting Code (ECC) test, provide the first read voltage to the memory. The memory is configured to: determine a second read voltage based on the first read voltage and generate a second reading output of the target memory data using the second read voltage.

Abstract: A memory device and an operation method thereof are provided. The operation method includes: in a first phase, selecting a global signal line, selecting a first string select line, unselecting a second string select line, selecting a first word line, and unselecting a second word line; sensing during a second phase; in a third phase, keeping voltages of the global signal line, the selected first word line and the unselected second word line, unselecting the first string select line and selecting the second string select line to switch voltages of the first and the second string select lines; and sensing during a fourth phase.

Abstract: A memory device and an operation method thereof are provided. The memory device includes: a plurality of page buffers, storing an input data; a plurality of memory planes coupled to the page buffers, based on received addresses of the memory planes, a plurality of weights stored in the memory planes, the memory planes performing bit multiplication on the weights and the input data in the page buffers in parallel to generate a plurality of bit multiplication results in parallel, the bit multiplication results stored back to the page buffers; and at least one accumulation circuit coupled to the page buffers, for performing bit accumulation on the bit multiplication results of the memory planes in parallel or in sequential to generate a multiply-accumulate (MAC) operation result.

Abstract: Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems are provided. In one aspect, a memory system includes a memory storing data and a memory controller coupled to the memory. The memory controller is configured to: obtain a first reading output of target memory data in the memory using a first read voltage, and in response to determining that the first reading output fails to pass an Error-Correcting Code (ECC) test, provide the first read voltage to the memory. The memory is configured to: determine a second read voltage based on the first read voltage and generate a second reading output of the target memory data using the second read voltage.

Abstract: A non-volatile memory and a programming method thereof are provided. The programming method of the non-volatile memory includes the following steps. A coarse programming procedure is performed for programing all of a plurality of memory cells at an erase state to 2?N-1 or 2?N program states. N is a positive integer. A fine programming procedure is performed for pushing all of memory cells into 2?N-1 or 2?N verify levels.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: A memory device and an operation method thereof are provided. The memory device includes: a plurality of page buffers, storing an input data; a plurality of memory planes coupled to the page buffers, based on received addresses of the memory planes, a plurality of weights stored in the memory planes, the memory planes performing bit multiplication on the weights and the input data in the page buffers in parallel to generate a plurality of bit multiplication results in parallel, the bit multiplication results stored back to the page buffers; and at least one accumulation circuit coupled to the page buffers, for performing bit accumulation on the bit multiplication results of the memory planes in parallel or in sequential to generate a multiply-accumulate (MAC) operation result.

Abstract: Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems with machine learning (ML) are provided. In one aspect, a memory system includes a memory and a memory controller configured to: obtain a first reading output of memory data using a first read voltage corresponding to a first set of parameters associated with the memory data; if the first reading output fails to pass an Error Correction Code (ECC) test, obtain a second reading output of the memory data using a second read voltage corresponding to a second set of parameters associated with the memory data and including the first set of parameters, the second read voltage being generated using at least one ML algorithm based on the second set of parameters; and if the second reading output passes the ECC test, output the second reading output as a target reading output of the memory data.

Abstract: An in-memory computing method and an in-memory computing apparatus are adapted to perform multiply-accumulate (MAC) operations on a memory by a processor. In the method, a pre-processing operation is respectively performed on input data and weight data to be written into input lines and memory cells of the memory to divide the input data and weight data into a primary portion and a secondary portion. The input data and the weight data divided into the primary portion and the secondary portion are written into the input lines and the memory cells in batches to perform the MAC operations and obtain a plurality of computation results. According to a numeric value of each of the computation results, the computation results are filtered. According to the portions to which the computation results correspond, a post-processing operation is performed on the filtered computation results to obtain output data.

Abstract: A data management method for a memory is provided. The memory includes memory pages. Each of the memory pages includes memory cells. A data update command corresponding to a logical address is received. The logical address maps to a physical address of a target memory page before receiving the data update command. First and second reading voltages are applied to obtain at least a first and a second target memory cell to be sanitized in the target memory page of the memory pages, a first programming voltage is applied to change the logical state of the first target memory cell to a logical state with a higher threshold voltage, and a second programming voltage is applied to change the logical state of the second target memory cell to a logical state with a higher threshold voltage. The first programming voltage is different from the second programming voltage.

Abstract: A data management method for a memory is provided. The memory includes memory pages. Each of the memory pages includes memory cells. A data update command corresponding to a logical address is received. The logical address maps to a physical address of a target memory page before receiving the data update command. First and second reading voltages are applied to obtain at least a first and a second target memory cell to be sanitized in the target memory page of the memory pages, a first programming voltage is applied to change the logical state of the first target memory cell to a logical state with a higher threshold voltage, and a second programming voltage is applied to change the logical state of the second target memory cell to a logical state with a higher threshold voltage. The first programming voltage is different from the second programming voltage.

Abstract: Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems with machine learning (ML) are provided. In one aspect, a memory system includes a memory and a memory controller configured to: obtain a first reading output of memory data using a first read voltage corresponding to a first set of parameters associated with the memory data; if the first reading output fails to pass an Error Correction Code (ECC) test, obtain a second reading output of the memory data using a second read voltage corresponding to a second set of parameters associated with the memory data and including the first set of parameters, the second read voltage being generated using at least one ML algorithm based on the second set of parameters; and if the second reading output passes the ECC test, output the second reading output as a target reading output of the memory data.