Abstract: Provided is a package structure including a substrate, a metal pad, a first polymer layer, a second polymer layer, a redistribution layer (RDL), and a third polymer layer. The metal pad is located on the substrate. The first polymer layer is located on the substrate. The first polymer layer has a first opening which exposes a portion of a top surface of the metal pad. The second polymer layer is located on the first polymer layer. The second polymer layer has a second opening which exposes the portion of the top surface of the metal pad and a first top surface of the first polymer layer. The RDL covers the portion of the top surface of the metal pad and extends onto a portion of the first top surface of the first polymer layer and the second polymer layer. The third polymer layer is located on the RDL.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: Provided is a package structure including a substrate, a metal pad, a first polymer layer, a second polymer layer, a redistribution layer (RDL), and a third polymer layer. The metal pad is located on the substrate. The first polymer layer is located on the substrate. The first polymer layer has a first opening which exposes a portion of a top surface of the metal pad. The second polymer layer is located on the first polymer layer. The second polymer layer has a second opening which exposes the portion of the top surface of the metal pad and a first top surface of the first polymer layer. The RDL covers the portion of the top surface of the metal pad and extends onto a portion of the first top surface of the first polymer layer and the second polymer layer. The third polymer layer is located on the RDL.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.

Abstract: The invention provides novel immunogenic proteins LigA and LigB from Leptospira for use in the development of effective vaccines and antibodies, as well as improved diagnostic methods and kits.

Abstract: The invention provides novel immunogenic proteins LigA and LigB from Leptospira for use in the development of effective vaccines and antibodies, as well as improved diagnostic methods and kits.

Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.

Abstract: The invention provides novel immunogenic proteins LigA and LigB from Leptospira for use in the development of effective vaccines and antibodies, as well as improved diagnostic methods and kits.

Abstract: An optical component includes a substrate and two optical lenses, and the substrate and the two optical lenses are an integrated and inseparable structure. A groove that can accommodate a required collimating optical element is provided on the substrate, or a collimating optical element and the substrate are integrated. Because fabrication of optical elements is completed during fabrication of the optical component, the number of elements to fabricate and time and cost of fabricating the elements can be reduced. Also, during assembly of an image capturing device, it is only required that the optical component is locked to a body of the image capturing device to complete arrangement of a front panel and the optical elements, which can greatly simplify an assembly procedure and shorten assembly time.

Abstract: The invention provides novel immunogenic proteins LigA and LigB from Leptospira for use in the development of effective vaccines and antibodies, as well as improved diagnostic methods and kits.

Abstract: A nucleic acid construct comprising a genetic engineered heterogeneous nuclear ribonucleoprotein (hnRNP) A1 gene is provided. A transgenic mouse in which the expression of hnRNP A1 gene has been disrupted is also provided. The mouse is useful for studying the role of hnRNP A1 gene in normal and disease states of a developmental disorder and muscular diseases. Therefore, a method of screening a compound for potential use in prevention and/or treatment of developmental disorder and muscular diseases is further provided.