Abstract: Provided herein are hydrogels that include a plurality of bacteriophages located within and covalently bonded to the hydrogel interior. The hydrogel is engineered to facilitate a controlled sustained release of the connected bacteriophages, e.g., to or within the body of a patient suffering from a bacterial infection. Also provided are methods for forming the provided hydrogels, and for using the hydrogels to treat a patient suffering from a bacterial infection.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.

Abstract: A semiconductor device includes a compound semiconductor layer disposed on a substrate, a protection layer disposed on the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode penetrating the protection layer and on the compound semiconductor layer, wherein the gate electrode is disposed between the source electrode and the drain electrode. The semiconductor device also includes a plurality of field plates disposed over the protection layer and between the gate electrode and the drain electrode, wherein the plurality of field plates are separated from each other.

Abstract: A semiconductor device includes a compound semiconductor layer disposed on a substrate, a protection layer disposed on the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode penetrating the protection layer and on the compound semiconductor layer, wherein the gate electrode is disposed between the source electrode and the drain electrode. The semiconductor device also includes a plurality of field plates disposed over the protection layer and between the gate electrode and the drain electrode, wherein the plurality of field plates are separated from each other.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.

Abstract: A semiconductor device includes a compound semiconductor layer disposed on a substrate, a protection layer disposed on the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode penetrating the protection layer and on the compound semiconductor layer, wherein the gate electrode is disposed between the source electrode and the drain electrode. The semiconductor device also includes a plurality of field plates disposed over the protection layer and between the gate electrode and the drain electrode, wherein the plurality of field plates are separated from each other. A method for fabricating the semiconductor device is also provided.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.

Abstract: A semiconductor structure includes a substrate, a first III-V compound layer, a second III-V compound layer, a third III-V compound layer, and a fourth III-V compound layer. The top of the substrate includes a first region and a second region. The first III-V compound layer is in the first region. The second III-V compound layer is disposed over the first III-V compound layer. A first carrier channel is formed between the first III-V compound layer and the second III-V compound layer. The second III-V compound layer has a first thickness. The third III-V compound layer is in the second region. The fourth III-V compound layer is disposed over the third III-V compound layer. A second carrier channel is formed between the fourth III-V compound layer and the third III-V compound layer. The fourth III-V compound layer has a second thickness less than the first thickness.

Abstract: A semiconductor structure includes a substrate, a first III-V compound layer, a second III-V compound layer, a third III-V compound layer, and a fourth III-V compound layer. The top of the substrate includes a first region and a second region. The first III-V compound layer is in the first region. The second III-V compound layer is disposed over the first III-V compound layer. A first carrier channel is formed between the first III-V compound layer and the second III-V compound layer. The second III-V compound layer has a first thickness. The third III-V compound layer is in the second region. The fourth III-V compound layer is disposed over the third III-V compound layer. A second carrier channel is formed between the fourth III-V compound layer and the third III-V compound layer. The fourth III-V compound layer has a second thickness less than the first thickness.

Abstract: A semiconductor structure includes a substrate, a first III-V compound layer, a second III-V compound layer, a third III-V compound layer, and a fourth III-V compound layer. The top of the substrate includes a first region and a second region. The first III-V compound layer is in the first region. The second III-V compound layer is disposed over the first III-V compound layer. A first carrier channel is formed between the first III-V compound layer and the second III-V compound layer. The second III-V compound layer has a first thickness. The third III-V compound layer is in the second region. The fourth III-V compound layer is disposed over the third III-V compound layer. A second carrier channel is formed between the fourth III-V compound layer and the third III-V compound layer. The fourth III-V compound layer has a second thickness less than the first thickness.

Abstract: A method for forming a semiconductor device is provided. A substrate is provided. An epitaxial layer is formed on the substrate. An insulation region and an active region are defined on the upper surface of the epitaxial layer. An insulation structure is formed within the insulation region by an ion implantation process and an etching process, wherein the insulation structure includes a first insulation structure and a second insulation structure. A gate is formed on the epitaxial layer and is disposed within the active region. A source and a drain are formed on opposite sides of the gate and within the active region. A semiconductor device is also provided.

Abstract: A HEMT device is provided. The HEMT device includes a substrate, a buffer layer, a first epitaxial layer, a second epitaxial layer, an insulating layer, a gate, a source, a drain, a trench, and a metal layer. The buffer layer is formed on the substrate. The first epitaxial layer is formed on the buffer layer. The second epitaxial layer is formed on the first epitaxial layer. The insulating layer is formed on the second epitaxial layer. The gate is disposed in the insulating layer. The source and the drain are disposed in the insulating layer. The trench passes through the insulating layer and the second epitaxial layer, and extends into the first epitaxial layer. The metal layer is formed on the insulating layer to connect to the source, and is filled into the trench to electrically connect to the first epitaxial layer and the source.

Abstract: A semiconductor structure includes a substrate, a first III-V compound layer, a second III-V compound layer, a third III-V compound layer, and a fourth III-V compound layer. The top of the substrate includes a first region and a second region. The first III-V compound layer is in the first region. The second III-V compound layer is disposed over the first III-V compound layer. A first carrier channel is formed between the first III-V compound layer and the second III-V compound layer. The second III-V compound layer has a first thickness. The third III-V compound layer is in the second region. The fourth III-V compound layer is disposed over the third III-V compound layer. A second carrier channel is formed between the fourth III-V compound layer and the third III-V compound layer. The fourth III-V compound layer has a second thickness less than the first thickness.

Abstract: A high electron mobility transistor includes a buffer layer, a threshold voltage adjustment layer, a band adjustment layer, a first enhancement layer, a gate electrode, and source/drain electrodes. The threshold voltage adjustment layer is disposed on the buffer layer. A channel region is disposed in the buffer layer adjacent to an interface between the buffer layer and the threshold voltage adjustment layer. The band adjustment layer is disposed on the threshold voltage adjustment layer. The first enhancement layer is conformally covering the threshold voltage adjustment layer and the band adjustment layer. The gate electrode is disposed on the first enhancement layer. The source/drain electrodes are disposed on the buffer layer through the threshold voltage adjustment layer and the first enhancement layer on opposite sides of the gate electrode respectively. The threshold voltage adjustment layer and the first enhancement layer are III-V semiconductors.

Abstract: A semiconductor device includes a compound semiconductor layer disposed on a substrate, a protection layer disposed on the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode penetrating the protection layer and on the compound semiconductor layer, wherein the gate electrode is disposed between the source electrode and the drain electrode. The semiconductor device also includes a plurality of field plates disposed over the protection layer and between the gate electrode and the drain electrode, wherein the plurality of field plates are separated from each other. A method for fabricating the semiconductor device is also provided.

Abstract: A HEMT device is provided. The HEMT device includes a substrate, a buffer layer, a first epitaxial layer, a second epitaxial layer, an insulating layer, a gate, a source, a drain, a trench, and a metal layer. The buffer layer is formed on the substrate. The first epitaxial layer is formed on the buffer layer. The second epitaxial layer is formed on the first epitaxial layer. The insulating layer is formed on the second epitaxial layer. The gate is disposed in the insulating layer. The source and the drain are disposed in the insulating layer. The trench passes through the insulating layer and the second epitaxial layer, and extends into the first epitaxial layer. The metal layer is formed on the insulating layer to connect to the source, and is filled into the trench to electrically connect to the first epitaxial layer and the source.

Abstract: A HEMT device is provided. The HEMT device includes a substrate, a first epitaxial layer, a second epitaxial layer, an insulating layer, a gate, a source, and a drain. The first epitaxial layer is formed on the substrate. The second epitaxial layer is formed on the first epitaxial layer. The insulating layer is formed on the second epitaxial layer. The gate is formed in the insulating layer and extends into the second epitaxial layer. The source and the drain are formed in the insulating layer and extend into the second epitaxial layer, wherein the source and the drain are located on both sides of the gate.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.

Abstract: A method for forming a semiconductor device is provided. A substrate is provided. An epitaxial layer is formed on the substrate. An insulation region and an active region are defined on the upper surface of the epitaxial layer. An insulation structure is formed within the insulation region by an ion implantation process and an etching process, wherein the insulation structure includes a first insulation structure and a second insulation structure. A gate is formed on the epitaxial layer and is disposed within the active region. A source and a drain are formed on opposite sides of the gate and within the active region. A semiconductor device is also provided.

Abstract: A HEMT device is provided. The HEMT device includes a substrate, a buffer layer, a first epitaxial layer, a second epitaxial layer, an insulating layer, a gate, a source, a drain, a trench, and a metal layer. The buffer layer is formed on the substrate. The first epitaxial layer is formed on the buffer layer. The second epitaxial layer is formed on the first epitaxial layer. The insulating layer is formed on the second epitaxial layer. The gate is disposed in the insulating layer. The source and the drain are disposed in the insulating layer. The trench passes through the insulating layer and the second epitaxial layer, and extends into the first epitaxial layer. The metal layer is formed on the insulating layer to connect to the source, and is filled into the trench to electrically connect to the first epitaxial layer and the source.