Patents by Inventor Yung Ho Ryu
Yung Ho Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9676047Abstract: A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.Type: GrantFiled: December 12, 2014Date of Patent: June 13, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yung Ho Ryu, Seung Woo Choi, Tae Hun Kim, Gyeong Seon Park, Jong Hoon Lim, Sung Joon Kim, Myong Soo Cho
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Patent number: 9450151Abstract: A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.Type: GrantFiled: May 20, 2015Date of Patent: September 20, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae Choi, Young Soo Park, Yung Ho Ryu, Tae Young Park, Jin Gi Hong
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Publication number: 20160064611Abstract: A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.Type: ApplicationFiled: May 20, 2015Publication date: March 3, 2016Inventors: Pun Jae CHOI, Young Soo PARK, Yung Ho RYU, Tae Young PARK, Jin Gi HONG
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Patent number: 9087932Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.Type: GrantFiled: July 23, 2013Date of Patent: July 21, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Hun Kim, Sung Joon Kim, Yong Il Kim, Yung Ho Ryu, Myeong Rak Son, Su Yeol Lee, Seung Hwan Lee, Tae Sung Jang, Su Min Hwangbo
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Publication number: 20150099316Abstract: A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.Type: ApplicationFiled: December 12, 2014Publication date: April 9, 2015Inventors: Yung Ho RYU, Seung Woo CHOI, Tae Hun KIM, Gyeong Seon PARK, Jong Hoon LIM, Sung Joon KIM, Myong Soo CHO
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Patent number: 8928027Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.Type: GrantFiled: November 8, 2013Date of Patent: January 6, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Yung Ho Ryu, Hae Yeon Hwang, Young Chul Shin
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Publication number: 20140273318Abstract: A method of forming a metal bonding layer includes forming a first bonding metal layer and a second bonding metal layer on surfaces of first and second bonding target objects, respectively. The second bonding target object is disposed on the first bonding target object to allow the first and second bonding metal layers to face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first and second bonding metal layers includes a reaction delaying layer formed of a metal for delaying the reaction between the first and second bonding metal layers.Type: ApplicationFiled: March 12, 2014Publication date: September 18, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yung Ho RYU, Jong Hoon LIM, Sung Joon KIM, Tae Hun KIM, Gyeong Seon PARK, Myong Soo CHO
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Patent number: 8829548Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.Type: GrantFiled: July 20, 2012Date of Patent: September 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong In Yang, Sung Tae Kim, Yong Il Kim, Su Yeol Lee, Seung Wan Chae, Hyung Duk Ko, Yung Ho Ryu
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Patent number: 8828761Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.Type: GrantFiled: March 13, 2013Date of Patent: September 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Joon Kim, Tae Sung Jang, Jong Gun Woo, Yung Ho Ryu, Tae Hun Kim, Sang Yeob Song
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Publication number: 20140117392Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.Type: ApplicationFiled: July 23, 2013Publication date: May 1, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Hun KIM, Sung Joon KIM, Yong Il KIM, Yung Ho RYU, Myeong Rak SON, Su Yeol LEE, Seung Hwan LEE, Tae Sung JANG, Su Min HWANGBO
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Publication number: 20140061713Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.Type: ApplicationFiled: November 8, 2013Publication date: March 6, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yung Ho RYU, Hae Yeon HWANG, Young Chul SHIN
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Patent number: 8581293Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.Type: GrantFiled: September 1, 2011Date of Patent: November 12, 2013Assignee: Samsung Electronics Co., LtdInventors: Yung Ho Ryu, Hae Yeon Hwang, Young Chul Shin
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Publication number: 20130244356Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.Type: ApplicationFiled: March 13, 2013Publication date: September 19, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Joon Kim, Tae Sung Jang, Jong Gun Woo, Yung Ho Ryu, Tae Hun Kim, Sang Yeob Song
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Publication number: 20130020598Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.Type: ApplicationFiled: July 20, 2012Publication date: January 24, 2013Inventors: Jong In Yang, Sung Tae Kim, Yong Il Kim, Su Yeol Lee, Seung Wan Chae, Hyung Duk Ko, Yung Ho Ryu
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Patent number: 8334156Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.Type: GrantFiled: December 29, 2009Date of Patent: December 18, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Cheol Kyu Kim, Yung Ho Ryu, Soo Min Lee, Jong In Yang, Tae Hyung Kim
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Publication number: 20120181570Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.Type: ApplicationFiled: January 10, 2012Publication date: July 19, 2012Applicant: SAMSUNG LED CO., LTD.Inventors: Hyung Duk KO, Yung Ho RYU, Tae Sung JANG
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Publication number: 20120104449Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.Type: ApplicationFiled: September 1, 2011Publication date: May 3, 2012Inventors: Yung Ho RYU, Hae Yeon Hwang, Young Chul Shin
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Patent number: 7859086Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.Type: GrantFiled: March 16, 2007Date of Patent: December 28, 2010Assignee: Samsung LED Co., Ltd.Inventors: Cheol Kyu Kim, Yung Ho Ryu, Soo Min Lee, Jong In Yang, Tae Hyung Kim
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Publication number: 20100105159Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.Type: ApplicationFiled: December 29, 2009Publication date: April 29, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Cheol Kyu KIM, Yung Ho Ryu, Soo Min Lee, Jong In Yang, Tae Hyung Kim
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Patent number: 7473571Abstract: There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.Type: GrantFiled: October 3, 2006Date of Patent: January 6, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hae Yeon Hwang, Yung Ho Ryu, Da Mi Shim, Se Hwan Ahn