Patents by Inventor Yung-Ta Li

Yung-Ta Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFETs and Methods for Forming the Same
    Publication number: 20150171187
    Abstract: A finFET and methods for forming a finFET are disclosed. A structure comprises a substrate, a fin, a gate dielectric, and a gate electrode. The substrate comprises the fin. The fin has a major surface portion of a sidewall, and the major surface portion comprises at least one lattice shift. The at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the sidewall. The gate electrode is on the gate dielectric.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 18, 2015
    Inventors: Yu-Lien Huang, Chun-Hsiang Fan, Tsu-Hsiu Perng, Chi-Kang Liu, Yung-Ta Li, Ming-Huan Tsai, Clement Hsingjen Wann, Chi-Wen Liu
  • FinFETs and methods for forming the same
    Patent number: 8987791
    Abstract: A finFET and methods for forming a finFET are disclosed. A structure comprises a substrate, a fin, a gate dielectric, and a gate electrode. The substrate comprises the fin. The fin has a major surface portion of a sidewall, and the major surface portion comprises at least one lattice shift. The at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the sidewall. The gate electrode is on the gate dielectric.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: March 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Lien Huang, Chun-Hsiang Fan, Tsu-Hsiu Perng, Chi-Kang Liu, Yung-Ta Li, Ming-Huan Tsai, Clement Hsingjen Wann, Chi-Wen Liu
  • Gate structure for semiconductor device
    Patent number: 8901665
    Abstract: The present disclosure provides a method of semiconductor fabrication including forming an inter-layer dielectric (ILD) layer on a semiconductor substrate. The ILD layer has an opening defined by sidewalls of the ILD layer. A spacer element is formed on the sidewalls of the ILD layer. A gate structure is formed in the opening adjacent the spacer element. In an embodiment, the sidewall spacer also for a decrease in the dimensions (e.g., length) of the gate structure formed in the opening.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: December 2, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Andrew Joseph Kelly, Pei-Shan Chien, Yung-Ta Li, Chan Syun Yang
  • FinFETs and Methods for Forming the Same
    Publication number: 20140239354
    Abstract: A finFET and methods for forming a finFET are disclosed. A structure comprises a substrate, a fin, a gate dielectric, and a gate electrode. The substrate comprises the fin. The fin has a major surface portion of a sidewall, and the major surface portion comprises at least one lattice shift. The at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the sidewall. The gate electrode is on the gate dielectric.
    Type: Application
    Filed: February 27, 2013
    Publication date: August 28, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Lien Huang, Chun-Hsiang Fan, Tsu-Hsiu Perng, Chi-Kang Liu, Yung-Ta Li, Ming-Huan Tsai, Clement Hsingjen Wann, Chi-Wen Liu
  • GATE STRUCTURE FOR SEMICONDUCTOR DEVICE
    Publication number: 20130161762
    Abstract: The present disclosure provides a method of semiconductor fabrication including forming an inter-layer dielectric (ILD) layer on a semiconductor substrate. The ILD layer has an opening defined by sidewalls of the ILD layer. A spacer element is formed on the sidewalls of the ILD layer. A gate structure is formed in the opening adjacent the spacer element. In an embodiment, the sidewall spacer also for a decrease in the dimensions (e.g., length) of the gate structure formed in the opening.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 27, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
    Inventors: Andrew Joseph Kelly, Pei-Shan Chien, Yung-Ta Li, Chan Syun Yang