Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a retractable electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being extended or retracted along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion, and the loop end of the radio-frequency matcher is fixed to the bottom of a chamber body.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein an electrically conductive supporting rod where a lower electrode is fixed is connected to driving means, the driving means driving the electrically conductive support rod to move axially; besides, the lower electrode is fixed to the bottom of a chamber body via a retractable sealing part, causing the upper surface of the lower electrode to be hermetically sealed in an accommodation space in the chamber body; an electrical connection part is connected on the chamber body; the radio frequency current in the chamber body returns, via the electrical connection part, to the loop end of a radio frequency matcher.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a telescope electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being telescoped along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion. In this way, the height of the lower electrode may be controlled through telescoping of the retractable electrically conductive part, such that the spacing between the upper and lower pads becomes adjustable.

Abstract: Disclosed are a plasma processing apparatus and an adjusting method of the same. The apparatus includes: a vacuum chamber enclosed by a chamber body and a chamber lid; a movable upper electrode assembly disposed in the vacuum chamber; a bottom electrode assembly, arranged opposite the movable upper electrode assembly, the bottom electrode assembling being detachably connected with the bottom of the chamber body; a plurality of self-alignment devices each including a self-alignment upper structure and a self-alignment lower structure, the self-alignment upper structure and the self-alignment lower structure being connected to the movable upper electrode assembly and the bottom electrode assembly, respectively, wherein when the self-alignment upper structures and the self-alignment bottom structures are aligned to be jointed together, the center of the movable upper electrode assembly is aligned with that of the bottom electrode assembly.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a telescope electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being telescoped along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion. In this way, the height of the lower electrode may be controlled through telescoping of the retractable electrically conductive part, such that the spacing between the upper and lower pads becomes adjustable.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a retractable electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being extended or retracted along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion, and the loop end of the radio-frequency matcher is fixed to the bottom of a chamber body.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein an electrically conductive supporting rod where a lower electrode is fixed is connected to driving means, the driving means driving the electrically conductive support rod to move axially; besides, the lower electrode is fixed to the bottom of a chamber body via a retractable sealing part, causing the upper surface of the lower electrode to be hermetically sealed in an accommodation space in the chamber body; an electrical connection part is connected on the chamber body; the radio frequency current in the chamber body returns, via the electrical connection part, to the loop end of a radio frequency matcher.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5?/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

Abstract: The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or count clockwise.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5?/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.