Patents by Inventor Yu-Ren Peng
Yu-Ren Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12364081Abstract: A light-emitting device includes a first type semiconductor layer, an active layer, a second type semiconductor layer disposed adjacent to the active layer and opposite the first type semiconductor layer, and including a current spreading layer that has a recess, an insulation layer filling the recess and protruding from a surface of the current spreading layer that faces in a direction away from the active layer, and a contact layer disposed on the surface of the current spreading layer which lacks said insulation layer. A sum of a depth of the recess and a thickness of the contact layer is not less than a thickness of the insulation layer. A method for producing the light-emitting device is also disclosed.Type: GrantFiled: September 7, 2022Date of Patent: July 15, 2025Assignee: TIANJIN SANAN OPTOELECTRONICS CO., LTD.Inventors: Yuehua Jia, Weifan Ke, Huanshao Kuo, Yu-Ren Peng, Duxiang Wang
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Publication number: 20250143032Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, wherein A is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, n2 is a refractive index of the second transparent dielectric layer and is greater than n1, and n2 is lower than a refractive index of the second conductivity type semiconductor layer. A light-emitting apparatus including the aforesaid flip-chip light-emitting diode is also provided.Type: ApplicationFiled: January 6, 2025Publication date: May 1, 2025Inventors: Weiping XIONG, Xin WANG, Zhiwei WU, Di GAO, Yu-Ren PENG, Huan-Shao KUO
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Publication number: 20250040295Abstract: A micro light-emitting device includes a semiconductor epitaxial structure having a bottom surface and a top surface opposite to each other, and including a first cladding layer, an active layer, and a second cladding layer disposed sequentially in such order in a direction from the bottom surface to the top surface. At least one of the first and second cladding layers has a super-lattice structure. The super-lattice structure of the first cladding layer includes first sublayers and second sublayers stacked alternately. Each first sublayer includes Alx1Ga1-x1InP, and each second sublayer includes Alx2Ga1-x2InP, where 0<x1<x2?1. The super-lattice structure of the second cladding layer including third sublayers and fourth sublayers stacked alternately. Each third sublayer includes Alz1Ga1-z1InP, and each fourth sublayer includes Alz2Ga1-z2InP, where 0<z1<z2?1.Type: ApplicationFiled: October 2, 2024Publication date: January 30, 2025Inventors: Yenchin WANG, Jinghua CHEN, Huan Shao KUO, Yu-Ren PENG, Shaohua HUANG
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Patent number: 12211957Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.Type: GrantFiled: January 7, 2022Date of Patent: January 28, 2025Assignee: Tianjin Sanan Optoelectronics Co., Ltd.Inventors: Weiping Xiong, Xin Wang, Zhiwei Wu, Di Gao, Yu-Ren Peng, Huan-shao Kuo
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Patent number: 12119425Abstract: A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a InzAlX1Ga1?X1As highly doped p-type semiconductor layer wherein z ranges from 0 to 0.05, a AlX2Ga1?X2As first composition graded layer wherein X2 is greater than 0 and less than X1, a GaYIn1?YP highly doped n-type semiconductor layer and a AlX3Ga1?X3As second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.Type: GrantFiled: March 16, 2022Date of Patent: October 15, 2024Assignee: TIANJIN SANAN OPTOELECTRONICS CO., LTD.Inventors: Chihhung Hsiao, Yu-Ren Peng, Kunhuang Cai, Duxiang Wang, Chia-Hung Chang
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Publication number: 20240313157Abstract: A light-emitting diode includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to each other, and that includes a first semiconductor layer, a second semiconductor layer, an active layer, and a third semiconductor layer disposed in such order in a direction from the first surface to the second surface. The first semiconductor layer includes a first sublayer and a second sublayer. A surface of the first sublayer away from the second sublayer is the first surface. The first surface has a roughened surface. The second sublayer is closer to the second surface than the first sublayer. Each of the first sublayer and the second sublayer includes an aluminum-containing compound semiconductor material. An aluminum content of the first sublayer is smaller than that of the second sublayer. A method for manufacturing the light-emitting diode is also provided.Type: ApplicationFiled: May 21, 2024Publication date: September 19, 2024Inventors: Yenchin WANG, Jinghua CHEN, Huan Shao KUO, Yu-Ren PENG, Shaohua HUANG
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Publication number: 20240304759Abstract: A light-emitting device includes a semiconductor epitaxial unit, a first contact electrode, and a second contact electrode. The semiconductor epitaxial unit includes a first semiconductor layer, a second semiconductor layer, and an active layer. The first contact electrode and the second contact electrode are disposed on the semiconductor epitaxial unit, and are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. The first contact electrode includes an ohmic contact layer and a first electrode barrier layer. The second contact electrode includes an ohmic contact layer and a second electrode barrier layer. The ohmic contact layer of the first contact electrode includes a first ohmic contact layer. The ohmic contact layer of the second contact electrode includes a second ohmic contact layer. The second contact electrode further includes another first ohmic contact layer disposed between the second ohmic contact layer and the second electrode barrier layer.Type: ApplicationFiled: May 17, 2024Publication date: September 12, 2024Inventors: Weiping XIONG, Xin WANG, Zhiwei WU, Di GAO, Yu-Ren PENG, Huan-shao KUO
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Publication number: 20240266463Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.Type: ApplicationFiled: July 6, 2023Publication date: August 8, 2024Inventors: Jinghua CHEN, Yenchin WANG, Chong XU, Shasha CHEN, Kunte LIN, Kaiqing XU, Shihchieh HOU, Shao-Hua HUANG, Huanshao KUO, Yu-Ren PENG
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Publication number: 20240234633Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.Type: ApplicationFiled: October 20, 2023Publication date: July 11, 2024Inventors: Weihuan LI, JInghua CHEN, Yu-Ren PENG, Huan-Shao KUO, Chia-Hung CHANG
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Publication number: 20240213412Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially disposed in such order in a thickness direction from the first surface to the second surface. An ohmic contact layer is disposed on the second surface of the semiconductor epitaxial structure, and a light-transmissive dielectric layer is disposed on the ohmic contact layer away from the semiconductor epitaxial structure. The light-transmissive dielectric layer has a plurality of through holes. A reflection layer is disposed on the light-transmissive dielectric layer and fills the through holes so as to be electrically connected to the ohmic contact layer.Type: ApplicationFiled: December 22, 2023Publication date: June 27, 2024Inventors: Cheng MENG, Dongmei CAO, Weihuan LI, Huan-Shao KUO, Yu-Ren PENG, Duxiang WANG
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Publication number: 20240203956Abstract: A light-emitting device includes a semiconductor epitaxial structure, a reflection layer, and a light-transmissive dielectric structure. The semiconductor epitaxial structure has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first surface is a light-exiting surface. The reflection layer is disposed on the semiconductor epitaxial structure away from the light-exiting surface, and is adapted for reflecting light emitted by the active layer. The light-transmissive dielectric structure is disposed between the reflection layer and the semiconductor epitaxial structure, and includes a first sublayer, a second sublayer, and a third sublayer. A light-emitting apparatus and a plant lighting apparatus are also provided.Type: ApplicationFiled: February 29, 2024Publication date: June 20, 2024Inventors: Cheng MENG, Dongmei CAO, Huan-Shao KUO, Yu-Ren PENG, Duxiang WANG
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Publication number: 20240178348Abstract: A light-emitting device includes: an epitaxial structure having a first surface and a second surface opposite to the first surface, and including a first type semiconductor layered unit that includes a first type window layer and a first type ohmic contact layer disposed at one side of the first type window layer; an active layer; and a second type semiconductor layered unit. The first type window layer is disposed between the first type ohmic contact layer and the active layer. The first type ohmic contact layer contains a material represented by Alx1Gay1InP, where 0?x1?1, 0?y1?1. The first type window layer contains a material represented by Alx2Gay2InP, where 0<x2?1, 0?y2?1. The first type ohmic contact layer has an Al content lower than an Al content of the first type window layer. A light-emitting apparatus that includes a light-emitting device according to the disclosure is also disclosed.Type: ApplicationFiled: October 17, 2023Publication date: May 30, 2024Inventors: Weihuan LI, JInghua CHEN, Peng GAO, Fuyang NING, Xiaofeng LIU, Yu-Ren PENG, Huanshao KUO, Duxiang WANG, Chia-Hung CHANG
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Publication number: 20240170615Abstract: A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.Type: ApplicationFiled: November 1, 2023Publication date: May 23, 2024Inventors: Zhiwei WU, Yanyun WANG, Weiping XIONG, Di GAO, Huan-Shao KUO, Yu-Ren PENG
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Publication number: 20240162372Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes well layers and barrier layers that are alternately stacked. The active layer has an upper surface that is adjacent to the second semiconductor layer, and a lower surface that is opposite to the upper surface. The first semiconductor layer is doped with an n-type dopant, which has a first concentration of 5E17/cm3 at a first point in the first semiconductor layer. The first point of the first semiconductor layer and the lower surface of the active layer have a first distance therebetween. The first distance ranges from 150 nm to 500 nm.Type: ApplicationFiled: November 9, 2023Publication date: May 16, 2024Inventors: Weihuan LI, Jinghua CHEN, Huan-Shao KUO, Yu-Ren PENG, Dongpo CHEN, Chia-Hung CHANG
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Publication number: 20240154068Abstract: A light-emitting device includes: an epitaxial structure that has a first surface and a second surface; a first metal electrode that is disposed on the first surface, and that includes a main electrode and extending electrodes; current transmission blocks that are disposed on the second surface, and each having an electrode-facing sidewall and a non-electrode-facing sidewall; and a current blocking layer that is disposed in spaces among the current transmission blocks.Type: ApplicationFiled: October 23, 2023Publication date: May 9, 2024Inventors: Yuehua JIA, Weihuan LI, Huan-Shao KUO, Yu-Ren PENG, Duxiang WANG
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Publication number: 20240145441Abstract: The light-emitting device includes a substrate, a light-emitting chip unit formed on the substrate and including multiple chips, an isolation groove extending in a first direction and separating two adjacent ones of the chips, and a bridging structure. The isolation groove is defined by a bottom and two sidewalls and has a first groove section and a second groove section arranged in the first direction. The first groove section has a width in a width direction perpendicular to the first direction that is greater than a width of the second groove section in the width direction. At the first groove section, one of the sidewalls has a curved portion. The bridging structure is formed on the bottom and the sidewalls, covers the curved portion, and electrically connects the two adjacent ones of the chips.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Weiping XIONG, Zhiwei WU, Di GAO, Huan-Shao KUO, Yu-Ren PENG
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Publication number: 20240136471Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.Type: ApplicationFiled: October 19, 2023Publication date: April 25, 2024Inventors: Weihuan LI, JInghua CHEN, Yu-Ren PENG, Huan-Shao KUO, Chia-Hung CHANG
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Publication number: 20240047618Abstract: A light-emitting diode includes a semiconductor epitaxy stack, a reflection layer, a first pad electrode, and a second pad electrode. The semiconductor epitaxy stack has a first surface and a second surface opposite to the first surface. The first surface has an electrode region and a light exit region. The semiconductor epitaxy stack includes a first type semiconductor layer, an active layer and a second type semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The reflection layer is disposed on the second surface opposite to the first surface. The first pad electrode is disposed on the electrode region and is electrically connected to the first type semiconductor layer. The second pad electrode is disposed on the electrode region and is electrically connected to the second type semiconductor layer.Type: ApplicationFiled: June 22, 2023Publication date: February 8, 2024Inventors: Taotao YIN, Jin WANG, Huanshao KUO, Yu-Ren PENG, Duxiang WANG
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Publication number: 20240030376Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.Type: ApplicationFiled: July 6, 2023Publication date: January 25, 2024Inventors: Jinghua CHEN, Yenchin WANG, Chong XU, Shasha CHEN, Kunte LIN, Kaiqing XU, Shihchieh HOU, Shao-Hua HUANG, Huanshao KUO, Yu-Ren PENG
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Publication number: 20230402572Abstract: A light-emitting device includes: a semiconductor epitaxial stack that has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on one another in a direction from the second surface to the first surface; a light-transmissive dielectric layer that is disposed on the second surface and that has through holes; an ohmic contact layer that is formed in the through holes and that is in contact with the first semiconductor layer; an adhesion layer that is disposed on the light-transmissive dielectric layer opposite to the semiconductor epitaxial stack; a metal reflection layer that is disposed on the adhesion layer opposite to the semiconductor epitaxial stack; and a diffusion barrier layer that is disposed between the ohmic contact layer and the adhesion layer. A light-emitting apparatus and a method for manufacturing the light-emitting device are also provided.Type: ApplicationFiled: August 25, 2023Publication date: December 14, 2023Inventors: Yuehua JIA, Yu-Ren PENG, Duxiang WANG