Abstract: A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer.

Abstract: A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer.

Abstract: A method and apparatus for determining how well a photolithographic model simulates a photolithographic printing process. A test pattern of features is printed on a wafer and the shape of the printed features is compared with the shape of simulated features produced by the model. A cost function is calculated from the comparison that quantifies how well the model simulates the photolithographic printing process.

Abstract: A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission characteristics is defined along with corresponding optimal mask data pixel transmission characteristics. An objective function is defined having one or more penalty functions that promote solutions representing a desired resolution enhancement technique. Optimization of the objective function determines the transmission characteristics of the pixels in the mask data that is used to create one or more corresponding masks or reticles.

Abstract: A system and method for optimizing an illumination source to print a desired pattern of features dividing a light source into pixels and determining an optimum intensity for each pixel such that when the pixels are simultaneously illuminated, the error in a printed pattern of features is minimized. In one embodiment, pixel solutions are constrained from solutions that are bright, continuous, and smooth. In another embodiment, the light source optimization and resolution enhancement technique(s) are iteratively performed to minimize errors in a printed pattern of features.

Abstract: A computer system reads data corresponding to an IC layout target layer and performs an etch simulation on the target layer. Etch biases are calculated and the inverse of the etch biases are used to produce a new target layer. The new target layer is provided as an input to an optical process correction (OPC) loop that corrects the data for image/resist distortions until a simulation indicates that a pattern of objects created on a wafer matches the new target layer. In another embodiment of the invention, original IC layout data is provided to both the OPC loop and an etch simulation. Etch biases calculated by the etch simulation are used in the OPC loop in order to produce mask/reticle data that will be compensated for both optical and resist distortions as well as for etch distortions.

Abstract: A grid-based resist simulator predicts how a wafer coated with one or more resist layers will develop when exposed with a mask pattern. Image intensity values are calculated at a grid of points on the wafer, and the image intensity points are analyzed with a resist simulator that produces a resist surface function. A threshold contour of the resist surface function defines how the mask pattern will print on a wafer.

Abstract: A contrast-based resolution enhancing technology (RET) determines a distribution of contrast values for edge fragments in a design layout or portion thereof. Resolution enhancement is applied to the edge fragments in a way that increases the number of edge fragments having a contrast value that exceeds a predetermined threshold.

Abstract: A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer.

Abstract: A grid-based resist simulator predicts how a wafer coated with one or more resist layers will develop when exposed with a mask pattern. Image intensity values are calculated at a grid of points on the wafer, and the image intensity points are analyzed with a resist simulator that produces a resist surface function. A threshold contour of the resist surface function defines how the mask pattern will print on a wafer.

Abstract: A system and method for optimizing an illumination source to print a desired pattern of features dividing a light source into pixels and determining an optimum intensity for each pixel such that when the pixels are simultaneously illuminated, the error in a printed pattern of features is minimized. In one embodiment, pixel solutions are constrained from solutions that are bright, continuous, and smooth. In another embodiment, the light source optimization and resolution enhancement technique(s) are iteratively performed to minimize errors in a printed pattern of features.

Abstract: A method for performing a matrix-based verification technique such as optical process correction (OPC) that analyzes interactions between movement of a fragment on a mask and one or more edges to be created on a wafer. In one embodiment, each edge to be created is analyzed and one or more fragments of a mask are moved in accordance with a gradient matrix that defines how changes in position of a fragment affect one or more edges on the mask. Fragments are moved having a significant effect on an edge in question. Simulations are performed and fragments are moved in an iterative fashion until each edge has a objective within a prescribed tolerance. In another embodiment, each edge has two or more objectives to be optimized. A objective is selected in accordance with a cost function and fragments are moved in a mask layout until each edge has acceptable specification for each objective.

Abstract: A method and apparatus for compensating for flare intensity variations across an integrated circuit. A layout description for a physical layer of an integrated circuit or portion thereof is divided into a number of regions such as adjacent tiles. An estimate of the flare intensity in each region is determined. The flare intensity values calculated are divided into a number of ranges. In one embodiment, a data layer in a layout description is defined for each range of flare values computed. Features to be printed in an area having a flare value in a particular range are associated with a corresponding additional data layer. The features associated with each additional data layer are analyzed with a resolution enhancement technique that is selected or adjusted to compensate for differing flare values occurring in the integrated circuit.

Abstract: A contrast-based resolution enhancing technology (RET) determines a distribution of contrast values for edge fragments in a design layout or portion thereof. Resolution enhancement is applied to the edge fragments in a way that increases the number of edge fragments having a contrast value that exceeds a predetermined threshold.

Abstract: A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission characteristics is defined along with corresponding optimal mask data pixel transmission characteristics. An objective function is defined having one or more penalty functions that promote solutions representing a desired resolution enhancement technique. Optimization of the objective function determines the transmission characteristics of the pixels in the mask data that is used to create one or more corresponding masks or reticles.

Abstract: A system for producing mask layout data retrieves target layout data defining a pattern of features, or portion thereof and an optimized mask layout pattern that includes a number of printing and non-printing features. Mask layout data for one or more subresolution assist features (SRAFs) is then defined to approximate one or more non-printing features of the optimized mask layout pattern.

Abstract: A contrast-base resolution enhancing technology (RET) receives an indication of an edge fragment in a photolithographic design. The edge fragment has a tag classification that defines a contrast of the edge fragment. The contrast-based RET applies a resolution enhancement to the edge fragment based on the tag classification. The resolution enhancement introduces an additional feature in the photolithographic design. The additional feature changes the contrast of the edge fragment.

Abstract: A method for performing a matrix-based verification technique such as optical process correction (OPC) that analyzes interactions between movement of a fragment on a mask and one or more edges to be created on a wafer. In one embodiment, each edge to be created is analyzed and one or more fragments of a mask are moved in accordance with a gradient matrix that defines how changes in position of a fragment affect one or more edges on the mask. Fragments are moved having a significant effect on an edge in question. Simulations are performed and fragments are moved in an iterative fashion until each edge has a objective within a prescribed tolerance. In another embodiment, each edge has two or more objectives to be optimized. A objective is selected in accordance with a cost function and fragments are moved in a mask layout until each edge has acceptable specification for each objective.

Abstract: A method and apparatus for compensating for flare intensity variations across an integrated circuit. A layout description for a physical layer of an integrated circuit or portion thereof is divided into a number of regions such as adjacent tiles. An estimate of the flare intensity in each region is determined. The flare intensity values calculated are divided into a number of ranges. In one embodiment, a data layer in a layout description is defined for each range of flare values computed. Features to be printed in an area having a flare value in a particular range are associated with a corresponding additional data layer. The features associated with each additional data layer are analyzed with a resolution enhancement technique that is selected or adjusted to compensate for differing flare values occurring in the integrated circuit.

Abstract: A method for performing a matrix-based verification technique such as optical process correction (OPC) that analyzes interactions between movement of a fragment on a mask and one or more edges to be created on a wafer. In one embodiment, each edge to be created is analyzed and one or more fragments of a mask are moved in accordance with a gradient matrix that defines how changes in position of a fragment affect one or more edges on the mask. Fragments are moved having a significant effect on an edge in question. Simulations are performed and fragments are moved in an iterative fashion until each edge has a objective within a prescribed tolerance. In another embodiment, each edge has two or more objectives to be optimized. A objective is selected in accordance with a cost function and fragments are moved in a mask layout until each edge has acceptable specification for each objective.