Abstract: A heating ventilation and air conditioning (HVAC) system includes an air handling unit having an air handling unit outlet, and at least one zone having an inlet and an outlet. The at least one zone is operably coupled to the air handling unit outlet. A return air duct fluidly connecting the outlet to the air handling unit and at least one sterilization system arranged within the return air duct at or directly downstream from the outlet. At least one indoor air quality sensor operable to monitor an indoor air quality within the at least one zone. A controller is operably coupled to the at least one indoor air quality sensor and the at least one sterilization system. The controller is configured to operate the at least one sterilization system when the indoor air quality within the at least one zone exceeds an allowable threshold.

Abstract: A multilayered liposome disclosed herein includes a liposome core defined by a lipid layer, and five or more coating layers surrounding the lipid layer, wherein the five or more coating layers include more than one positively charged polymeric layer and more than one negatively charged drug layer, wherein the more than one positively polymeric layer and the more than one negatively charged drug layer are deposited in an alternating manner, wherein one of the more than one positively charged polymeric layer is formed as an outmost coating layer, and wherein each of the more than one negatively charged drug layer includes insulin, an insulin-like factor, a growth factor, or a hormonal peptide. In one embodiment, an anion liposome core (HSPC/DPPG) is coated via a layer-by-layer approach with multilayers of oppositely charged insulin and chitosan layers.

Abstract: An effective therapeutic agent for subretinal hyperreflective material or retinal diseases accompanying subretinal hyperreflective material is provided by the present invention. Specifically, a therapeutic agent for subretinal hyperreflective material or a retinal disease accompanying subretinal hyperreflective material, containing an aptamer that binds to FGF2 or a salt thereof is provided.

Abstract: An electronic device, e.g. integrated circuit, has an n-type region and a p-type region located within a semiconductor substrate, the n-type region and the p-type region each intersecting the substrate surface. A dielectric structure is located directly on the substrate surface. The dielectric structure has first and second laterally opposed sides, with the first side located over the n-type region and the second side located over the p-type region.

Abstract: A two-wire current loop system includes a current loop with a transmitter and a host. The system also includes a monolithic integrated circuit included with the transmitter. The monolithic integrated circuit includes: 1) a power supply terminal coupled to the current loop; 2) a loop ground terminal coupled to the current loop and configured to output a current to the current loop; 3) device circuitry with a power supply node and an internal ground node, wherein the power supply node is coupled to the power supply terminal; and 4) a reverse wiring protection circuit coupled between the internal ground node of the device circuitry and the loop ground terminal.

Abstract: The present invention provides a preparation formulation capable of stably maintaining the activity of an aptamer, particularly an aptamer for FGF2, for a long term, thereby providing a pharmaceutical preparation containing an aptamer, particularly an FGF2 aptamer, as an active ingredient.

Abstract: An electronic device, e.g. an integrated circuit, is formed on a P-type lightly-doped semiconductor substrate having an N-type buried layer. First and second N-wells extend from a surface of the substrate to the buried layer. A first NSD region is located within the first N-well, and a second NSD region is located within the second N-well. A PSD region extends from the substrate surface into the substrate and is located between the first and second NSD regions. A P-type lightly-doped portion of the substrate is located between the N-well and the substrate surface and between the PSD region and the first and second NSD regions.

Abstract: A semiconductor device has a protected node and a reference node, and a bi-directional ESD structure electrically coupled between the protected node and the reference node. The bi-directional ESD structure includes a main transistor electrically coupled between the protected node and the reference node, an upper control transistor with current nodes electrically coupled between the protected node and a control node of the main transistor, and a lower control transistor with current nodes electrically coupled between the reference node and a control node of the main transistor. The bi-directional ESD structure also includes an upper trigger network configured to provide a transient on-state signal to the upper control transistor from a positive electrical pulse on the protected node. The bi-directional ESD structure further includes a lower trigger network configured to provide a transient on-state signal to the lower control transistor from a negative electrical pulse on the protected node.

Abstract: A semiconductor device has a protected node and a reference node, and a bi-directional ESD structure electrically coupled between the protected node and the reference node. The bi-directional ESD structure includes a main transistor electrically coupled between the protected node and the reference node, an upper control transistor with current nodes electrically coupled between the protected node and a control node of the main transistor, and a lower control transistor with current nodes electrically coupled between the reference node and a control node of the main transistor. The bi-directional ESD structure also includes an upper trigger network configured to provide a transient on-state signal to the upper control transistor from a positive electrical pulse on the protected node. The bi-directional ESD structure further includes a lower trigger network configured to provide a transient on-state signal to the lower control transistor from a negative electrical pulse on the protected node.

Abstract: An electronic device, e.g. an integrated circuit, is formed on a P-type lightly-doped semiconductor substrate having an N-type buried layer. First and second N-wells extend from a surface of the substrate to the buried layer. A first NSD region is located within the first N-well, and a second NSD region is located within the second N-well. A PSD region extends from the substrate surface into the substrate and is located between the first and second NSD regions. A P-type lightly-doped portion of the substrate is located between the N-well and the substrate surface and between the PSD region and the first and second NSD regions.

Abstract: An electronic device, e.g. integrated circuit, has an n-type region and a p-type region located within a semiconductor substrate, the n-type region and the p-type region each intersecting the substrate surface. A dielectric structure is located directly on the substrate surface. The dielectric structure has first and second laterally opposed sides, with the first side located over the n-type region and the second side located over the p-type region.

Abstract: An engine and a method of forming an engine are provided. The engine has a block that defines a cooling jacket extending continuously about an outer perimeter of first and second siamesed cylinders. The block defines a series of head bolt bores intersecting a deck face such that each cylinder is surrounded by four bores. The jacket has a first floor and a second floor. The second floor is offset above the first floor and extends along an intake side of the block between midpoints of the first and second cylinders, respectively. The second floor is configured to decouple a relationship between the cooling jacket and the series of bores for each cylinder and reduce fourth order bore distortion for each cylinder.

Abstract: A two-wire current loop system includes a current loop with a transmitter and a host. The system also includes a monolithic integrated circuit included with the transmitter. The monolithic integrated circuit includes: 1) a power supply terminal coupled to the current loop; 2) a loop ground terminal coupled to the current loop and configured to output a current to the current loop; 3) device circuitry with a power supply node and an internal ground node, wherein the power supply node is coupled to the power supply terminal; and 4) a reverse wiring protection circuit coupled between the internal ground node of the device circuitry and the loop ground terminal.

Abstract: In accordance with at least one embodiment, an ESD device comprises: a semiconductor; a pad; a ground rail; a p-well formed in the semiconductor; a first p-type region formed in the p-well and electrically coupled to the ground rail; a first n-type region formed in the p-well and electrically coupled to the pad; a second n-type region formed in the p-well and electrically coupled to the ground rail; an n-well formed in the semiconductor; a first n-type region formed in the n-well; a first p-type region formed in the n-well and electrically coupled to the pad; and a second p-type region formed in the n-well and electrically coupled to the first n-type region formed in the n-well.

Abstract: Disclosed examples include integrated circuits, fabrication methods and ESD protection circuits to selectively conduct current between a protected node and a reference node during an ESD event, including a protection transistor, a first diode and a resistor formed in a first region of a semiconductor structure, and a second diode formed in a second region isolated from the first region by a polysilicon filled deep trench, where the first and second diodes include cathodes formed by deep N wells alongside the deep trench in the respective first and second regions to use integrated deep trench diode rings to set the ESD protection trigger voltage and prevent a parasitic deep N well/P buried layer junction from breakdown at lower than the rated voltage of the host circuitry.

Abstract: A mouse with multiple side buttons may provide a user with ease of accessing buttons and assigning macro keys to each buttons. However, such a mouse may not take into account the comfort and feel of the user when engaging with the buttons, and manipulation of the side buttons can cause strain or fatigue to the hands. According to various embodiments, an input device comprises: a housing; a plurality of buttons; and an actuator configured to change a position of the plurality of buttons relative to the housing.

Abstract: In some examples, an electrostatic discharge (ESD) device comprises an insulated-gate bipolar transistor (IGBT) comprising a source terminal, an anode terminal, a gate terminal, and a body terminal; and at least one reverse bias device comprising a first terminal and a second terminal, wherein the first terminal couples to the source terminal and the second terminal couples to the body terminal.

Abstract: An electrostatic discharge (ESD) protection circuit includes a high power supply rail (VDD) and a low power supply rail (VSS). The ESD protection circuit further includes an active shunt transistor coupled between VDD and VSS. The active shunt transistor includes a gate. The ESD protection circuit also includes a sensing transistor connected between an input/output (I/O) pad and the gate of the active shunt transistor. If an ESD stress event occurs on the I/O pad or on a VDD pad, the sensing transistor is caused to be turned ON thereby permitting a voltage on the I/O or VDD pad experiencing the ESD stress event to turn ON the active shunt transistor in turn causing ESD current to flow from the pad experiencing the ESD event, through VDD, and through the active shunt transistor to VSS.

Abstract: In accordance with at least one embodiment, an ESD device comprises: a semiconductor; a pad; a ground rail; a p-well formed in the semiconductor; a first p-type region formed in the p-well and electrically coupled to the ground rail; a first n-type region formed in the p-well and electrically coupled to the pad; a second n-type region formed in the p-well and electrically coupled to the ground rail; an n-well formed in the semiconductor; a first n-type region formed in the n-well; a first p-type region formed in the n-well and electrically coupled to the pad; and a second p-type region formed in the n-well and electrically coupled to the first n-type region formed in the n-well.

Abstract: According to various embodiments, a mouse may be provided. The mouse may include: a housing including a plurality of panels; a moveable member coupled to the plurality of panels such that a movement of the moveable member causes a movement of each panel of the plurality of panels.