Abstract: According to one embodiment, a progress determination system includes a first acquisition part and a second acquisition part. The first acquisition part acquires area data relating to area values of a plurality of colors from an image of an article, the article relating to a task. The second acquisition part acquires a classification result from a classifier by inputting the area data to the classifier. The classification result indicates a progress amount.

Abstract: There is provided a plasma processing apparatus comprising: a chamber where a substrate is disposed and processed by plasma generated therein; a substrate attraction portion disposed in the chamber, having therein an electrode, and configured to attract the substrate by a voltage applied to the electrode; a conductive member disposed in the chamber; and a voltage supply configured to apply a voltage to the electrode. A reference potential terminal of the voltage supply is connected to the conductive member, and the voltage supply applies a voltage having as a reference potential a potential of the conductive member to the electrode.

Abstract: A plasma processing method includes supplying a voltage to an electrode provided in an electrostatic chuck, thereby adsorbing a substrate onto an upper surface of the electrostatic chuck; after the voltage supplied to the electrode of the electrostatic chuck is stabilized, cutting off the supply of the voltage to the electrode, thereby bringing the electrode into a floating state; and after the voltage supplied to the electrode of the electrostatic chuck is stabilized, performing a predetermined processing with plasma on a surface of the substrate adsorbed onto the electrostatic chuck.

Abstract: A vehicle lamp includes a light emitting source, a support substrate configured to support the light emitting source, a heat sink configured to support the support substrate and dissipate heat from the light emitting source, and a light controller configured to control light from the light emitting source. The heat sink includes an opening configured to measure the radiant heat of the support substrate.

Abstract: A substrate processing method is provided. The method includes a) causing a substrate to be attracted to an electrostatic chuck, and b) processing the substrate. The method includes c) determining a charge removal temperature based on information preliminarily stored in a storage, thereby adjusting a surface temperature of the electrostatic chuck to be greater than or equal to the determined charge removal temperature, the information indicating a relationship between a maximum surface temperature of the electrostatic chuck, during substrate processing, and a residual charge amount for the processed substrate. The method includes d) removing a charge from the processed substrate.

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

Abstract: A light emitting device includes: a semiconductor structure including: a first semiconductor layer including: a first side parallel to an m-plane of the first semiconductor layer, and a second side meeting the first side, the second side being parallel to an a-plane of the first semiconductor layer, a light emitting layer disposed on a portion of the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer; a first conductive member disposed on the first semiconductor layer; a second conductive member disposed on the second semiconductor layer; a first terminal disposed on the first conductive member; a second terminal disposed on the second conductive member; and a covering member covering a lateral surface of the first conductive member, a lateral surface of the second conductive member, a lateral surface of the first terminal, and a lateral surface of the second terminal.

Abstract: A vehicle lamp includes a light source; a power supply configured to supply power to the light source; a heat sink configured to dissipate heat from the light source; and a light controller configured to control light from the light source. The heat sink has a configuration in which a plate is bent so as to have a first portion and a second portion that is bent at a predetermined angle with respect to the first portion, the light source is arranged on the first portion, and the second portion includes an insertion portion through which the power supply connected to the light source is inserted.

Abstract: A disclosed method of processing a substrate includes (a) providing a substrate in a chamber of a plasma processing apparatus. The substrate has a patterned organic mask. The method further includes (b) generating plasma from a processing gas in the chamber in a state where the substrate is accommodated in the chamber. The method further includes (c) periodically applying a pulsed negative direct-current voltage to an upper electrode of the plasma processing apparatus, during execution of the generating plasma (that is, the above (b)). In the applying a pulsed negative direct-current voltage, ions from the plasma are supplied to the upper electrode, so that a silicon-containing material which is released from the upper electrode is deposited on the substrate.

Abstract: A method of manufacturing a light-emitting device includes: providing a structure body including: a first substrate having a first surface and a second surface opposite to the first surface, the first surface including first regions and second regions; first light-emitting element portions respectively located on the first regions; and second light-emitting element portions respectively located on the second regions; fixing the first light-emitting element portions to a second substrate without fixing the second light-emitting element portions to the second substrate; subsequently, transferring the first light-emitting element portions from the first substrate to the second substrate by removing, from the second surface, portions of the first substrate overlapping the first regions when viewed from the second surface; and subsequently, separating the first light-emitting element portions from the second substrate in a state in which the second light-emitting element portions are located on the second regions.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

Abstract: According to one embodiment, a calculation system includes a detector, a combiner, and a duration calculator. The detector refers to a plurality of images of an object imaged from mutually-different angles, detects the object in each of the images, and calculates a provisional position of the object in a coordinate system for each of the images. The coordinate system is prescribed. The combiner calculates a combined position of the object in the coordinate system by using the calculated plurality of provisional positions. The duration calculator refers to process information and a plurality of execution regions and calculates a duration of at least a portion of a plurality of processes based on the combined position and the execution regions. The process information includes information relating to the processes. The execution regions are represented using the coordinate system. The processes are executed in the execution regions.

Abstract: A disclosed method of processing a substrate includes (a) providing a substrate in a chamber of a plasma processing apparatus. The substrate has a patterned organic mask. The method further includes (b) generating plasma from a processing gas in the chamber in a state where the substrate is accommodated in the chamber. The method further includes (c) periodically applying a pulsed negative direct-current voltage to an upper electrode of the plasma processing apparatus, during execution of the generating plasma (that is, the above (b)). In the applying a pulsed negative direct-current voltage, ions from the plasma are supplied to the upper electrode, so that a silicon-containing material which is released from the upper electrode is deposited on the substrate.

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

Abstract: A light emitting element comprises: a semiconductor layered body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and a dielectric member being in contact with the first semiconductor layer. The first semiconductor layer refractive index with respect to a wavelength of light differs from the light emitting layer refractive index with respect to the wavelength of light. The dielectric member comprises a first dielectric portion and a second dielectric portion. In a second direction that is perpendicular to a first direction that extends from the second semiconductor layer to the first semiconductor layer, a first portion of the first semiconductor layer is positioned between the first dielectric portion and the second dielectric portion. The first dielectric portion comprises the first surface and the second surface.

Abstract: A slurry for a positive electrode of a lithium-ion secondary battery. Also disclosed is a positive electrode for a lithium-ion secondary battery obtained using the slurry for a positive electrode of a lithium-ion secondary battery, and a production method for the electrode; and a lithium-ion secondary battery provided with the positive electrode for a lithium-ion secondary battery, and a production method for the battery. The slurry for a positive electrode of a lithium-ion secondary battery includes a positive electrode active material (A), a conductive auxiliary agent (B), a resin binder (C), a thickening dispersant (D), and water (E), wherein the thickening dispersant (D) includes a polyalkylene oxide having a phenyl group in a side chain thereof.

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

Abstract: Provided is a polycarbonate-based resin composition containing a polycarbonate-based resin containing a predetermined polycarbonate-polyorganosiloxane copolymer, and 0.5 to 5 parts by mass of a white pigment with respect to 100 parts by mass of the polycarbonate-based resin, in which the molecular weight distribution of a polyorganosiloxane block in the polycarbonate-polyorganosiloxane copolymer is controlled within a specific region.

Abstract: A structure for a substrate processing apparatus to be situated opposite a support pedestal for supporting a substrate includes an electrode plate having a surface exposed to an inner space of a chamber, the surface of the electrode plate having a first roughness, and an annular member disposed around the electrode plate and having a surface exposed to the inner space, the surface of the annular member having a second roughness, wherein the first roughness is different from the second roughness.