Abstract: A resistance variable memory includes a plurality of first wires, a plurality of second wires, a controller, a memory cell array, a second current rectifying element and a second variable resistance element, an access controller, a first contact plug, and a second contact plug. The access controller switches the second variable resistance element to a low resistance state or a high resistance state in accordance with a voltage applied to the memory cell connected in series. The first contact plug is connected to the even-numbered first wire in the second direction from the substrate via the corresponding access controller. The second contact plug is connected to the odd-numbered first wire in the second direction from the substrate via the corresponding access controller.

Abstract: According to one embodiment, a method is disclosed for manufacturing a microscopic structure. The method can include forming a stacked body including a plurality of films on a substrate, an upper surface of a mark region of the substrate for alignment being formed at a position lower than an upper surface of a portion of the substrate where a structural pattern is to be formed, aligning the substrate and a template using a configuration of an upper surface of the stacked body formed in the mark region, coating a material in a liquid form or a semi-liquid form onto the stacked body, pressing the template onto the material; forming a pattern by curing the material, releasing the template from the pattern, and patterning the stacked body using the pattern as a mask.

Abstract: According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: A memory device according to an embodiment includes an ion metal layer, an opposing electrode, and a resistance change layer. The ion metal layer contains a first metal and a second metal. The resistance change layer is disposed between the ion metal layer and the opposing electrode. The first metal is able to move repeatedly through an interior of the resistance change layer. The concentration of the first metal in a central portion of the ion metal layer is higher than the concentration of the first metal in an end portion of the ion metal layer.

Abstract: A resistance random access memory device according to one embodiment includes an interlayer insulation film which a trench is made therein, an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface is thicker than a portion of the ion supply layer provided along the side surface, and a resistance change layer provided at least below the ion supply layer.

Abstract: According to one embodiment, a conductive bridging memory device includes a first wiring layer having a plurality of first wiring portions extending in a first direction, a second wiring layer having a plurality of second wiring portions extending in a second direction crossing the first direction, and a resistance change layer provided continuously along a plane having the first direction and the second direction between the first wiring layer and the second wiring layer. Each of the first wiring portions includes a first wiring extending in the first direction. Each of the second wiring portions includes a second wiring extending in the second direction, and an ion metal layer provided between the second wiring and the resistance change layer and extending in the second direction.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Abstract: A memory device according to an embodiment includes an ion metal layer containing a first metal, an opposing electrode, a resistance change layer disposed between the ion metal layer and the opposing electrode, a first layer disposed in a central portion of a space between the ion metal layer and the resistance change layer, and a second layer disposed in an end portion of the space. The first layer contains a second metal. The second layer contains the second metal, and at least one selected from oxygen and nitrogen.

Abstract: A memory device according to an embodiment includes an ion metal layer, an opposing electrode, and a resistance change layer. The ion metal layer contains a first metal and a second metal. The resistance change layer is disposed between the ion metal layer and the opposing electrode. The first metal is able to move repeatedly through an interior of the resistance change layer. The concentration of the first metal in a central portion of the ion metal layer is higher than the concentration of the first metal in an end portion of the ion metal layer.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode and a resistance change film. The resistance change film is connected between the first electrode and the second electrode. An ion metal is introduced in a matrix material in the resistance change film. A concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film A layer made of only the ion metal is not provided in the memory device.

Abstract: A resistance random access memory device according to one embodiment includes an interlayer insulation film which a trench is made therein, an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface is thicker than a portion of the ion supply layer provided along the side surface, and a resistance change layer provided at least below the ion supply layer.

Abstract: According to one embodiment, a resistance-variable memory device that is suitable for miniaturization is provided. A resistance-variable memory device according to the embodiment comprises a resistance-variable layer, and an ion supply layer that is laminated on the resistance-variable layer and that contains a silver alloy. A silver concentration of the ion supply layer is in a range of 30-80 atom %.

Abstract: A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode and a resistance change film. The resistance change film is connected between the first electrode and the second electrode. An ion metal is introduced in a matrix material in the resistance change film. A concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film A layer made of only the ion metal is not provided in the memory device.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.

Abstract: A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.

Abstract: A solid state imaging device according to an embodiment includes a light sensing part which conducts photoelectric conversion on incident light. The solid state imaging device includes a ferroelectric layer including an organic compound on a surface of the light sensing part on which light is incident. The solid state imaging device includes a transparent electrode formed on the ferroelectric layer.